Guangdong-Hottech-SI2310
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SI2310
LOW VOLTAGE MOSFET
(N-CHANNEL)
FE
A
T
URES
Low on-resistance:V
DS
=60V,R
DS(ON)
≤105m
Ω@
V
GS
=10V,I
D
=3A
For Low power DC to DC converter application
For Load switch application
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
Value
60
Unit
V
V
DS
Gate-source voltage
V
GS
I
D
±20
3
V
Continuous drain current
Pulsed drain current (Note 1)
Power dissipation
A
I
DM
P
D
10
A
0.35
357
150
W
Thermal resistance from Junction to ambient
Junction temperature
R
θJA
T
J
°C/W
°C
°C
Storage temperature
T
STG
-55 ~+150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
V
(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
60
V
V
GS
=0V, I
D
=250μA
V
DS
=60V,
V
GS
=0V
μ
A
I
DSS
1
V
DS
=0V,
I
GSS
±100 nA
V
GS
=±20V
V
GS(th)
0.5
R
DS(ON)
g
FS
2
V
V
DS
=
V
GS
,
I
D
=250μA
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=3A
V
DS
=15V, I
D
=2A
105 m
Ω
Drain-source on-resistance (note 1)
125 m
Ω
Forward transconductance (note 1)
Input capacitance
1.4
S
C
iss
C
oss
C
rss
t
d(on)
t
r
247
34
19.5
6
pF
pF
pF
nS
nS
nS
nS
nC
V
DS
=30V, V
GS
=0V, f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
15
15
10
6
V
DD
=30V, V
GS
=10V,
R
GEN
=1Ω, I
D
=1.5A
Turn-off delay time
t
d(off)
t
f
Turn-off fall time
Total gate charge
Q
g
Gate-source charge
Q
gs
Q
gd
V
SD
1
nC V
DS
=30V,V
GS
=4.5V,I
D
=3A
nC
Gate-drain charge
1.3
Diode forward voltage (note 1)
I
S
=3A, V
GS
=0V
1.2
V
Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .
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SI2310
LOW VOLTAGE MOSFET
(N-CHANNEL)
Typical Characteristics
Transfer Characteristics
Output Characteristics
15
8
6
4
2
0
Pulsed
V
DS
=5.0V
Pulsed
V
GS
=5V
、
4V
、
3.0V
T
a
=25
℃
T
a
=100
℃
10
V
GS
=2.5V
5
V
GS
=2.0V
0
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
I
D
——
—— V
GS
R
DS(ON)
140
120
100
80
400
300
200
100
0
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
VGS=4.5V
VGS=10V
I
D
=3A
60
40
20
2
4
6
8
10
0
2
4
6
8
10
0.5
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
V
SD
I
S
——
Threshold Voltage
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
T
a
=25
℃
Pulsed
1
I
D
=250uA
0.1
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
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SI2310
LOW VOLTAGE MOSFET
(N-CHANNEL)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
A
A1
A2
b
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
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SI2310
LOW VOLTAGE MOSFET
(N-CHANNEL)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
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