Guangdong-Hottech-SI2312
| Part # | Guangdong-Hottech-SI2312 |
Download  | Guangdong-Hottech-SI2312 |
SI2312
LOW VOLTAGE MOSFET
(N-CHANNEL)
FE
A
T
URES
Ultra Low on-resistance:V
DS
=20V,R
DS(ON)
≤31.8m
Ω@
V
GS
=4.5V,I
D
=5A
For Low power DC to DC converter application
For Load switch application
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
Value
20
Unit
V
V
DS
Gate-source voltage
V
GS
I
D
±8
V
Continuous drain current
5
A
Pulsed drain current (Note 1)
Continuous Source-Drain
Diode current
Power dissipation
I
DM
I
S
20
A
1.04
0.35
357
150
A
P
D
W
Thermal resistance from Junction to ambient
Junction temperature
R
θJA
T
J
°C/W
°C
°C
Storage temperature
T
STG
-55 ~+150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
V
(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
V
GS
=0V, I
D
=250μA
20
V
V
DS
=20V,
μ
A
I
DSS
I
GSS
1
V
GS
=0V
V
DS
=0V,
±100 nA
V
GS
=±8V
V
DS
=
V
GS
,
I
D
=250μA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4.7A
V
GS
=1.8V, I
D
=4.3A
V
DS
=10V, I
D
=5A
f=1MHz
V
GS(th)
0.45 0.7
18
1.0
V
31.8
35.6
41.4
m
Ω
m
Ω
Drain-source on-resistance (note 1)
R
DS(ON)
23
30
6
m
Ω
S
Forward transconductance (note 1)
Gate resistance
g
FS
R
g
0.5
4.8
Ω
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
865
105
55
pF
V
DS
=10V, V
GS
=0V, f=1MHz
Output capacitance
pF
pF
nS
nS
nS
nS
V
Reverse transfer capacitance
Turn-on delay time
10
20
32
12
1.2
Turn-on rise time
V
DD
=30V, V
GS
=10V,
R
GEN
=1Ω, I
D
=1.5A
Turn-off delay time
t
d(off)
t
f
Turn-off fall time
Diode forward voltage (note 1)
I
S
=4A, V
GS
=0V
V
SD
0.75
Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
1
/ 4
©
SI2312
LOW VOLTAGE MOSFET
(N-CHANNEL)
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
14
12
10
8
T
a
=25
℃
V
GS
=3V,4V,5V,6V
V
DS
=3V
Pulsed
18
Pulsed
16
14
12
10
8
T
a
=25
℃
T
a
=100
℃
V
GS
=2V
6
6
4
V
GS
=1.5V
4
2
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.0
1.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
40
150
100
50
Pulsed
T
a
=25
℃
Pulsed
I
D
=5A
35
30
25
20
15
10
V
GS
=1.8V
V
GS
=2.5V
T
a
=100
℃
V
GS
=4.5V
T
a
=25
℃
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
1
2
3
4
5
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
6
1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Pulsed
I
D
=250uA
T
a
=100
℃
T
a
=25
℃
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
2
/ 4
©
SI2312
LOW VOLTAGE MOSFET
(N-CHANNEL)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
A
A1
A2
b
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
3
/ 4
©
SI2312
LOW VOLTAGE MOSFET
(N-CHANNEL)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
4
/ 4
©
