Guangdong-Hottech-SS8050
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SS8050
BIPOLAR TRANSISTOR (NPN)
FE
A
T
URES
Complementary to SS8550
High Collector Current
Surface Mount device
SOT-323
MECHANICAL DATA
Case: SOT-323
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
5
V
Collector Current
1500
250
mA
mW
°C/W
°C
Collector Power Dissipation
P
C
Thermal Resistance From Junction To Ambient
Junction Temperature
R
θJA
T
J
500
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I
C
=100uA
，
I
E
=0
I
C
=0.1mA
，
I
B
=0
I =100uA
I =0
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
40
25
5
V
V
V
，
E
C
0.1
0.1
uA
V
CB
=40V, I
E
=0
Collector cut-off current
Emitter cut-off current
I
CEO
I
EBO
uA V
CE
=20V
,
I
B
=0
uA V
EB
=5V, I
C
=0
0.1
120
40
400
V
CE
=1V, I
C
=100mA
DC current gain
h
FE
V
CE
=1V, I
C
=800mA
I
C
=800mA
，
I
B
=80mA
I
C
=800mA
，
I
B
=80mA
V
CE
=10V,I
C
=50mA,f=30
V
CB
=10V, I
E
=0, f=1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
0.5
1.2
V
V
100
MHz
pF
MHz
Collector output
capacitance
C
ob
15
MHz
CLASSIFICATION OF
h
FE
Rank
L
H
J
Range
120-200
200-350
Y1
300-400
Marking
1
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
SS8050
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
Static Characteristic
I
C
h
FE
——
0.30
1000
100
10
1000uA
COMMON
EMITTER
Ta=25
℃
900uA
Ta=100
℃
0.25
800uA
700uA
0.20
0.15
0.10
0.05
0.00
Ta=25
℃
600uA
500uA
400uA
300uA
200uA
I
B
=100uA
V
CE
=1V
0.0
0.5
1.0
1.5
2.0
1
10
100
1000 1500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
—— I
C
V
CEsat
——
2000
1000
1000
100
10
Ta=25
℃
Ta=100
℃
Ta=100
℃
Ta=25
℃
β
=10
β
=10
1
100
1
10
100
1000 1500
1
10
100
1000
1500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
CB
/ V
EB
I
C
C
ob
/ C
ib
——
V
BE
——
200
100
1500
1000
f=1MHz
I
E
=0/I
C
=0
Ta=25
℃
Cib
Ta=100
℃
100
10
1
Cob
Ta=25
℃
10
V
CE
=1V
1
0.1
200
300
400
500
600
700
800
900
1000
1
10
20
BASE-EMMITER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
I
C
f
T
——
P
C
—— T
a
1000
300
250
200
150
100
50
100
10
1
V
CE
=10V
Ta=25
℃
0
1
10
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
SS8050
BIPOLAR TRANSISTOR (NPN)
SOT-323 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min.
Max.
A
A1
A2
b
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
c
D
E
E1
e
0.650TYP
0.525REF
0.026TYP
0.021REF
e1
L
1.200
1.400
0.047
0.055
L1
θ
0.260
0.460
0.010
0.018
0
°
8
°
0
°
8
°
SOT-323 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
3
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SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
SS8050
BIPOLAR TRANSISTOR (NPN)
SOT-323 Tape
and Reel
SOT-323 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-323
TOLERANCE
2.25
±0.1
2.55
±0.1
1.19
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
SOT-323 Tape Leader and Trailer
SOT-323 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
4
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
