Guangdong-Hottech-SS8550
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SS8550
BIPOLAR TRANSISTOR (PNP)
FE
A
T
URES
Complementary to SS8050
Excellent h
FE
Linearity
High Collector Current
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-5
V
Collector Current
Collector Power Dissipation
-1500
300
mA
mW
°C/W
°C
P
C
Thermal Resistance From Junction To Ambient
Junction Temperature
R
θJA
T
J
417
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I =-100uA
I =0
V
(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-40
-25
-5
V
V
，
E
C
V
(BR)CEO
V
(BR)EBO
I
C
=-0.1mA
，
I
B
=0
I =-100uA
I =0
V
，
E
C
I
CBO
I
CEO
-0.1
-0.1
-0.1
400
uA
uA
uA
V
CB
=-40V, I
E
=0
Collector cut-off current
V
CE
=-20V, I
B
=0
V
EB
=-5V, I
C
=0
Emitter cut-off current
I
EBO
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-800mA
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
-0.5
-1.2
-1
V
V
I
C
=-800mA
，
I
B
=-80mA
I
C
=-800mA
，
I
B
=-80mA
V
CE
=-1V,I
C
=-10mA
V
V
CE
=-10V,I
C
=-50mA,f=30
Transition frequency
f
T
100
MHz
pF
MHz
V
CE
=-10V, I
E
=0, f=1
MHz
Collector output
capacitance
C
ob
20
CLASSIFICATION OF
h
FE
Rank
L
H
J
Range
120-200
200-350
Y2
300-400
Marking
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SS8550
BIPOLAR TRANSISTOR (PNP)
Typical Characteristics
h
FE
——
I
C
Static Characteristic
500
-180
1mA
-160
-140
-120
-100
-80
0.9mA
Ta=100
℃
0.8mA
Ta=25
℃
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
0.2mA
-60
-40
-20
I
B
=0.1mA
-4.5
V
CE
=-1V
-1000
-0
-0.0
10
-0.1
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-5.0
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
I
C
V
CEsat
——
-1000
-1000
-100
-10
-900
-800
-700
-600
-500
-400
-300
-200
Ta=25
℃
Ta=100
℃
Ta=25
℃
Ta=100
℃
β
=10
β
=10
-1
-0.1
-1
-10
-100
-1000
0.2
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
—— I
C
V
CB
/ V
EB
C
ob
/ C
ib
——
-1000
-100
-10
100
f=1MHz
I
E
=0/ I
C
=0
Ta=25
o
C
C
ib
C
ob
Ta=100
o
C
Ta=25
℃
-1
VCE=-1V
-900
-0.1
-200
1
-0.2
20
-300
-400
-500
-600
-700
-800
-1000
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(mV)
Pc —— Ta
I
C
fT ——
500
350
300
250
200
150
100
50
100
VCE-10V
Ta=25
o
C
10
0
-1
-10
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
Ta (
℃
)
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SS8550
BIPOLAR TRANSISTOR (PNP)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
A
A1
A2
b
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
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SS8550
BIPOLAR TRANSISTOR (PNP)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
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