Hangzhou-Silan-Microelectronics-SVF2N60F
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SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
2
SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-Cell
TM
structure VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
1
3
TO-252-2L
1
3
1
2
3
1.Gate 2.Drain 3.Source
TO-251D-3L
1
1
1
2
2
3
2
3
3
TO-251J-3L TO-126-3L
TO-126F-3L
FEATURES
1
1
2
2
3
3
TO-220-3L
TO-220F-3L
2A,600V,R
DS(on)(typ.)
=3.7
@V
GS
=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Hazardous
substance control
Halogen free
Halogen free
Pb free
Part No.
SVF2N60M
Package Type
Marking
Packing
TO-251D-3L
TO-251J-3L
TO-126-3L
TO-126-3L
TO-126F-3L
TO-220F-3L
TO-220-3L
TO-252-2L
SVF2N60M
SVF2N60MJ
SVF2N60N
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60T
SVF2N60D
Tube
Tube
SVF2N60MJ
SVF2N60N
SVF2N60N
SVF2N60NF
SVF2N60F
SVF2N60T
SVF2N60DTR
Tube
Pb free
Bulk
Pb free
Tube
Pb free
Tube
Pb free
Tube
Halogen free
T
a
pe&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 1 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
ABSOLUTE MAXIMUM RATINGS (T
C
=25
C unless otherwise noted)
Ratings
Characteristics
Symbol
Unit
SVF2N
60N
SVF2N
60NF
SVF2N
SVF2N
60MJ
SVF2N
60F
SVF2N
60T
60M/D
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
600
±30
2.0
1.3
8.0
V
V
T
C
=25
C
T
C
=100
C
Drain Current
I
D
A
Drain Current Pulsed
I
DM
P
D
A
W
30
16
34
35
23
44
Power Dissipation(T
C
=25
C)
Derate above 25
C
0.24
0.13
0.27
0.28
0.18
0.35
W/
C
Single Pulsed Avalanche
Energy(Note 1)
E
AS
115
mJ
Operation Junction
T
J
-55
～
+150
-55
～
+150
C
C
Temperature Range
Storage Temperature Range
T
stg
THERMAL CHARACTERISTICS
Ratings
Characteristics
Symbol
Unit
SVF2N
60T
SVF2N
SVF2N
SVF2N
SVF2N
60MJ
SVF2N
60F
60N
60NF
60M/D
Thermal Resistance,
Junction-to-Case
R
θJC
4.17
7.81
3.7
3.57
62.0
5.56
62.5
2.86
62.5
C/W
C/W
Thermal Resistance,
Junction-to-Ambient
R
θJA
62.5
120
62.0
ELECTRICAL CHARACTERISTICS (T
C
=25
C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
Symbol
BV
DSS
I
DSS
Test conditions
V
GS
=0
V
,
I
D
=250µA
Min.
600
—
Typ.
—
Max.
—
Unit
V
V
DS
=600
V
,
V
GS
=0V
V
GS
=±30
V
,
V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
—
1.0
µA
nA
V
I
GSS
—
—
±100
4.0
V
GS(th)
2.0
—
R
DS(on)
V
GS
=10
V
,
I
D
=1.0A
—
3.7
4.2
On State Resistance
Input Capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
179
—
233
32
303
—
Output Capacitance
V
DS
=25V,V
GS
=0
V
,
f
=1.0MHZ
pF
Reverse Transfer Capacitance
Turn-on Delay Time
—
2.8
—
—
8.9
—
V
DD
=300
V
,
I
D
=2.0A, R
G
=25
Turn-on Rise Time
—
23.0
23.4
—
ns
(Note 2,3)
Turn-off Delay Time
t
d(off)
—
—
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 2 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
Characteristics
Turn-off Fall Time
Symbol
t
f
Test conditions
Min.
—
Typ.
24.9
8.24
1.64
4.44
Max.
—
Unit
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
—
—
V
DS
=480
V
,
I
D
=2.0A, V
GS
=10V
Q
gs
—
—
nC
(Note 2,3)
Q
gd
—
—
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
I
S
Test conditions
Integral Reverse P-N Junction
Diode in the MOSFET
I
S
=2.0A,V
GS
=0V
Min.
—
Typ.
—
Max.
2.0
8.0
1.4
—
Unit
A
I
SM
—
—
V
SD
T
rr
—
—
V
—
326
0.87
ns
µC
I
S
=2.0A,V
GS
=0
V
,
dI
F
/dt=100A/µS
Q
rr
—
—
1. L=30mH,
I
AS
=2.52A, V
DD
=100
V
,
R
G
=25
, starting T
J
=25
C;
2.
Pulse
T
e
st: Pulse width ≤300μs,Duty cycle≤2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 3 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
450
400
350
300
250
200
150
100
50
12
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
V
DS
=480V
V
DS
=300V
V
DS
=120V
10
8
C
iss
C
oss
C
rss
6
4
Notes:
1. V
GS
=0V
2. f=1MHz
2
0
Note: I
D
=2.0A
0
0.1
1
10
100
0
2
4
6
8
10
Drain-Source Voltage
–
V
DS
(V)
Total Gate Charge
–
Q
g
(nC)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-resistance vs. Temperature
3.0
2.5
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.0
0.9
0.8
Notes:
1. V
GS
=0V
2. I
D
=250µA
Notes:
1. V
GS
=10V
2. I
D
=1.0A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Junction Temperature
–
T
J
(°C)
Junction Temperature
–
T
J
(°C)
Figure 9-1. Max. Safe Operating
Area
(SVF2N60N)
Figure 9-2. Max. Safe Operating
Area
(SVF2N60NF)
10
2
10
1
10
0
10
2
Operation in this area
is limited by R
DS(ON)
Operation in this area
is limited by R
DS(ON)
10
1
10
0
100µs
100µs
1ms
1ms
10ms
10ms
DC
DC
10
-1
10
-1
Notes:
Notes:
1.T
C
=25°C
1.T
C
=25°C
2.T
j
=150°C
3.R
DS(ON)
[max]=4.2Ω
2.T
j
=150°C
3.R
DS(ON)
[max]=4.2Ω
10
-2
10
-2
10
0
10
0
10
1
10
2
10
3
10
1
10
2
10
3
Drain-Source Voltage – V
DS
(V)
Drain-Source Voltage – V
DS
(V)
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 5 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
V
GS
Same Type
as DUT
Qg
10V
50KΩ
V
DS
200nF
12V
300nF
Qgs
Qgd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
R
L
V
DS
V
DS
90%
V
GS
V
DD
R
G
DUT
10%
V
GS
10V
td(on)
tr
t
on
td(off)
t
f
t
off
Unclamped Inductive Switching Test Circuit & Waveform
1
BV
DSS
2
E
AS
=
LI
AS
L
2
–
BV
DSS
V
DD
V
DS
BV
DSS
I
AS
I
D
R
G
DUT
I
D(t)
V
DD
10V
V
DS(t)
Time
V
DD
tp
tp
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 7 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
PACKAGE OUTLINE(continued)
TO-252-2L
UNIT: mm
SYMBOL
MIN
2.10
0
NOM
2.30
—
MAX
2.50
0.127
0.89
5.46
0.65
0.65
A
A1
b
0.66
5.10
0.45
0.45
0.76
5.33
—
b3
c
c2
—
D
E
5.80
6.30
6.10
6.60
6.40
6.90
e
2.30TYP
10.10
1.50
Eject pin
（
note1
）
H
9.60
1.40
10.60
1.70
L
L1
2.90REF
0.80
L4
0.60
1.00
There are two conditions for this position:has an eject pin or has no eject pin.
TO-126-3L
UNIT: mm
A
E
A1
2.48
1.00
2.90
1.50
0.86
2.70
0.66
1.17
0.40
0.76
1.37
P
1.45
0.60
10.60
7.40
11.40
8.20
11.00
2.29TYP
15.80
2.35
3.30
14.50
2.10
b1
b
P
2.90
3.10
c
e
e
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 10 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
Disclaimer :
Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to propert
y
.
Silan will supply the best possible product for customers!
Part No.:
SVF2N60M/MJ/N/NF/F/T/D
Document Type:
Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Copyright:
Website:
Rev.:
3.3
Author:
Yin Zi
Yin Zi
Yin Zi
Revision History:
1.
Update characteristics
Rev.:
3.2
Revision History:
1.
Modify the Ordering information
Rev.:
3.1
Revision History:
1. Modify
the package outline of TO-126-3L
2. Modify
the package outline of TO-251
D
-3L
Rev.:
3.0
Revision History:
1.
Modify the package information of TO-220-3L
Rev.:
2.9
Revision History:
1.
Modify the package of TO-220F-3L;Modify the package of TO-252-2L;
Rev.:
2.8
Revision History:
1.
Modify the thermal characteristics
Rev.:
2.7
Revision History:
1.
Modify the note 1
Rev.:
2.6
Revision History:
1.
Add the pin No.
Rev.:
2.5
Revision History:
1.
Modify the package outline of TO-251J-3L
Rev.:
2.4
Revision History:
1.
Modify the ordering information
Author:
Author:
Author:
Author:
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Author:
Author:
Author:
Author:
Author:
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:3.3
Page 12 of 14
SVF2N60M
/MJ/N/NF/F/T/D_
Datasheet
Rev.:
Revision History:
1.
Modify the package outline of TO-126-3L
2.3
Author:
Yin Zi
Part No.:
SVF2N60M/MJ/N/NF/F/T/D
Document Type:
Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Copyright:
Website:
1.
Change the schematic diagram of MOS
Rev.:
2.1
Author:
Yin Zi
Revision History:
1.
Modify the package outline of TO-251D-3L; Add the value of forward transconductance
Rev.:
2.0
Revision History:
1.
Add the halogen free information of SVF2N60M
Rev.:
1.9
Revision History:
1.
Modify “PACKAGE OUTLINE”
Rev.:
1.8
Revision History:
1.
Add the package of TO-126-3L(2)
Rev.:
1.7
Revision History:
1.
Add the package of TO-126F-3L
Rev.:
1.6
Revision History:
1.
Modify the values of T
rr
and Q
rr;
Update the package outline of TO-251D-3L
Rev.:
1.5
Revision History:
1. Add
the halogen free information of SVF2N60F
Rev.:
1.4
Revision History:
1. Delete
the package of TO-251-3L
Rev.:
1.3
Revision History:
1. Modify
“PACKAGE OUTLINE”
Rev.:
1.2
Revision History:
1. Add
the package of TO-251D-3L, TO-251J-3L, TO-126-3L
Rev.:
1.1 20101021
Revision History:
1. Modify
“TYPICAL CHARACTERISTICS”, “PACKAGE OUTLINE”, the template of Datasheet
Rev.:
1.0
Author:
Yin Zi
Author:
Author:
Author:
Author:
Author:
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Yin Zi
Author:
Author:
Author:
Author:
Author:
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:2.3
Page 13 of 14
