Hangzhou-Silan-Microelectronics-SVF2N60M
| Part # | Hangzhou-Silan-Microelectronics-SVF2N60M |
Download  | Hangzhou-Silan-Microelectronics-SVF2N60M |
SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-cell
TM
structure DMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗
∗
∗
∗
∗
2A,600V,R
DS(on)(typ.)
=3.7
Ω
@V
GS
=10V
Low gate charge
Low C
rss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60DTR
Package Type
Marking
SVF2N60M
SVF2N60F
SVF2N60T
SVF2N60D
SVF2N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
TO-251-3L
TO-220F-3L
TO-220-3L
TO-252-2L
TO-252-2L
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 1 of 10
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS
(T
C
=25
°
C unless otherwise noted)
Rating
SVF2N60T
600
Parameter
Drain-Source Voltage
Symbol
Unit
SVF2N60F
SVF2N60M/D
V
DS
V
GS
I
D
V
V
Gate-Source Voltage
Drain Current
±30
2.0
A
Drain Current Pulsed
Power Dissipation(T
C
=25
°
C)
I
DM
8
A
34
44
23
W
P
D
-Derate above 25
°
C
0.27
0.35
0.18
W/
°
C
mJ
°
C
°
C
Single Pulsed Avalanche Energy
(Note 1)
Operation Junction Temperature
Storage Temperature
E
AS
T
J
115
-55
～
+150
-55
～
+150
T
stg
THERMAL CHARACTERISTICS
Parameter
Rating
SVF2N60T
2.86
Symbol
Unit
SVF2N60F
5.56
SVF2N60M/D
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θ
JC
R
θ
JA
3.7
°
C/W
°
C/W
110
62.5
120
ELECTRICAL CHARACTERISTICS
(T
C
=25
°
C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Symbol
B
VDSS
I
DSS
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= VDS, I
D
=250µA
V
GS
=10V, I
D
=1.0A
Min.
600
—
Typ.
—
Max. Unit
—
1.0
±100
4.0
4.2
—
V
µA
nA
V
—
I
GSS
—
—
V
GS(th)
R
DS(on)
C
iss
2.0
—
—
Static Drain- Source On State Resistance
Input Capacitance
3.7
250.1
35.7
1.1
Ω
—
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
pF
ns
Output Capacitance
C
oss
—
—
Reverse Transfer Capacitance
C
rss
—
—
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
t
d(on)
t
r
t
d(off)
t
f
—
—
—
—
—
9.2
—
—
—
—
—
V
DD
=300V,I
D
=2.0A,
23.4
15.3
20.1
5.67
R
G
=25
Ω
(Note 2,3)
Q
g
V
DS
=480V,I
D
=2.0A,
V
GS
=10V
nC
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
—
—
1.74
1.99
—
—
(Note 2,3)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 2 of 10
SVF2N60M/F/T/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
Min.
Typ. Max. Unit
Continuous Source Current
I
S
—
—
2.0
A
Pulsed Source Current
I
SM
—
—
8.0
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
SD
T
rr
I
S
=2.0A,V
GS
=0V
I
S
=2.0A,V
GS
=0V,
dI
F
/dt=100A/µS
—
—
—
—
1.4
—
V
230
1.0
ns
µC
Q
rr
—
1. L=30mH,
I
AS
=2.52A, V
DD
=145V, R
G
=25
Ω
, starting T
J
=25
°
C;
2.
Pulse Test: Pulse width
≤
300
μ
s,Duty cycle
≤
2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 3 of 10
SVF2N60M/F/T/D_Datasheet
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 4 of 10
SVF2N60M/F/T/D_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 5 of 10
SVF2N60M/F/T/D_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
V
GS
10V
Same Type
as DUT
Qg
50K
Ω
V
DS
200nF
12V
300nF
Qgs
Qgd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
R
L
V
DS
V
DS
90%
V
GS
V
DD
R
G
DUT
10%
V
GS
10V
td(on)
tr
td(off)
t
f
t
off
t
on
Unclamped Inductive Switching Test Circuit & Waveform
1
B
VDSS
2
E
AS
=
LI
AS
L
2
–
B
VDSS
V
DD
V
DS
B
VDSS
I
AS
I
D
R
G
DUT
I
D(t)
V
DD
10V
V
DS(t)
V
DD
tp
Time
tp
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 6 of 10
SVF2N60M/F/T/D_Datasheet
PACKAGE OUTLINE
TO-220-3L
UNIT: mm
TO-251-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 7 of 10
SVF2N60M/F/T/D_Datasheet
PACKAGE OUTLINE (continued)
TO-220F-3L(One)
UNIT: mm
TO-220F-3L(Two)
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 8 of 10
SVF2N60M/F/T/D_Datasheet
PACKAGE OUTLINE (continued)
TO-252-2L
UNIT: mm
Disclaimer:
•
Silan reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify that
such information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
•
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 9 of 10
SVF2N60M/F/T/D_Datasheet
ATTACHMENT
Revision History
Date
REV
Description
Page
2010.09.20
1.0
Original
Modify “TYPICAL CHARACTERISTICS”, “PACKAGE OUTLINE”, the
template of Datasheet
2010.10.21
1.1
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.1
2010.10.21
Page 10 of 10
