Hangzhou-Silan-Microelectronics-SVF7N60F
| Part # | Hangzhou-Silan-Microelectronics-SVF7N60F |
Download  | Hangzhou-Silan-Microelectronics-SVF7N60F |
SVF7N60T/F_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-Cell
TM
structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗
7A,600V,R
DS(on)
）
=1.0
Ω
@V =10V
（
typ
GS
∗
Low gate charge
∗
Low Crss
∗
Fast switching
∗
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF7N60T
SVF7N60F
Package
TO-220-3L
TO-220F-3L
Marking
SVF7N60T
SVF7N60F
Material
Pb free
Pb free
packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 1 of 8
SVF7N60T/F_Datasheet
ABSOLUTE MAXIMUM RATINGS
(T
c
=25
°
C unless otherwise noted)
Ratings
Characteristics
Drain-Source Voltage
Symbol
Unit
SVF7N60T
SVF7N60F
V
DS
V
GS
600
±30
7.0
4.0
28
V
V
Gate-Source Voltage
T
C
=25
°
C
Drain Current
I
D
A
T
C
=100
°
C
Drain Current Pulsed
I
DM
P
D
A
W
145
Power Dissipation(T
C
=25
°
C)
45
-Derate above 25
°
C
1.16
W/
°
C
mJ
°
C
0.36
Single Pulsed Avalanche Energy
(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
E
AS
T
J
489
-55
～
+150
-55
～
+150
T
stg
°
C
THERMAL CHARACTERISTICS
Ratings
Characteristics
Symbol
Unit
SVF7N60F
2.78
SVF7N60T
0.86
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θ
JC
R
θ
JA
°
C/W
°
C/W
62.5
120
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Symbol
B
VDSS
I
DSS
Test conditions
V
GS
=0V, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
GS
= VDS, I
D
=250µA
Min.
600
—
Typ.
—
Max. Unit
—
10
V
µA
nA
V
—
I
GSS
—
—
±100
4.0
V
GS(th)
2.0
—
R
DS(on)
V
GS
=10V, I
D
=3.5A
—
1.0
1.2
Ω
Input Capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
—
—
—
—
—
—
—
—
—
—
915
104
—
—
—
—
—
—
—
—
—
—
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
2.34
27.33
58.40
42.13
31.20
15.16
5.08
V
DD
=300V,I
D
=7.0A,
Turn-on Rise Time
R
G
=25
Ω
ns
Turn-off Delay Time
t
d(off)
t
f
(Note 2,3)
Turn-off Fall Time
Total Gate Charge
Q
g
V
DS
=480V,I
D
=7.0A,
V
GS
=10V
nC
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
(Note 2,3)
4.95
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 2 of 8
SVF7N60T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Integral Reverse P-N
Junction Diode in the
MOSFET
Min.
Typ.
Max. Unit
Continuous Source Current
I
S
—
—
7.0
A
Pulsed Source Current
I
SM
—
—
28
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
SD
T
rr
I
S
=7.0A,V
GS
=0V
—
—
—
—
1.4
—
V
I
S
=7.0A,V
GS
=0V,
351
3.1
ns
µC
dI
F
/dt=100A/µS
Q
rr
—
1. L=30mH,I
AS
=5.16A, V
DD
=159V, R
G
=25
Ω
,starting T
J
=25
°
C;
2.
Pulse Test: Pulse width
≤
300
μ
s,Duty cycle
≤
2%;
3.
Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 3 of 8
SVF7N60T/F_Datasheet
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 4 of 8
SVF7N60T/F_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-resistance Variation
vs. Temperature
vs. Temperature
3.0
1.2
2.5
2.0
1.5
1.1
1.0
1.0
0.9
Notes:
1. V
GS
=0V
Notes:
1. V
GS
=10V
0.5
2. I
D
=250µA
2. I
D
=3.5A
0.0
-100 -50
0.8
-100 -50
0
50
100 150 200
0
50
100 150 200
Junction Temperature – T
J
(°C)
Junction Temperature – T
J
(°C)
Figure 9-1. Max. Safe Operating
Area(SVF7N60T)
Figure 9-2. Max. Safe Operating
Area(SVF7N60F)
10
2
10
1
10
0
10
2
10
1
10
0
Operation in This Area is
Limited by R
DS(ON)
Operation in This Area is
Limited by R
DS(ON)
100µs
100µs
1ms
10ms
1ms
10ms
DC
DC
10
-1
10
-2
10
-1
10
-2
Notes:
1.T
C
=25°C
2.T
j
=150°C
3.Single Pulse
Notes:
1.T
C
=25°C
2.T
j
=150°C
3.Single Pulse
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
Drain Source Voltage – V
DS
(V)
Drain Source Voltage – V
DS
(V)
Figure 10. Maximum Drain Current vs.
Case Temperature
8
6
4
2
0
25
50
75
100
125
150
Case Temperature – T
C
(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 5 of 8
SVF7N60T/F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
V
GS
10V
Same Type
as DUT
Qg
50K
Ω
V
DS
200nF
12V
300nF
Qgs
Qgd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
R
L
V
DS
V
DS
90%
V
GS
V
DD
R
G
DUT
10%
V
GS
10V
td(on)
tr
td(off)
t
f
t
off
t
on
Unclamped Inductive Switching Test Circuit & Waveform
1
B
VDSS
2
E
AS
=
LI
AS
L
2
–
B
VDSS
V
DD
V
DS
B
VDSS
I
AS
I
D
R
G
DUT
I
D(t)
V
DD
10V
V
DS(t)
V
DD
tp
Time
tp
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 6 of 8
SVF7N60T/F_Datasheet
PACKAGE OUTLINE
TO-220-3L
UNIT: mm
TO-220F-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 7 of 8
SVF7N60T/F_Datasheet
Disclaimer:
•
Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
•
Silan will supply the best possible product for customers!
ATTACHMENT
Revision History
Date
REV
Description
Page
2011.01.17
1.0
Original
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2011.01.17
Page 8 of 8
