Hangzhou-Silan-Microelectronics-SVT042R5NT
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SVT042R5NL5_Datasheet
174A, 40V N-CHANNEL MOSFET
DESCRIPTION
SVT042R5NL5(T) is an N-channel enhancement mode power MOS
field effect transistor which is produced using advanced LVMOS
technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance.
This device is widely used in UPS, Power Management for Inverter
Systems.
FEATURES
174A,40V, R
DS(on)(typ.)
=1.8m
Ω
@V
GS
=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Hazardous
Part No.
Package
Marking
Packing
Substance Control
SVT042R5NL5TR
SVT042R5NT
PDFN-8-5X6X0.95-1.27
TO-220-3L
042R5NL5
042R5NT
Halogen free
Pb free
T
a
pe&Reel
Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, T
C
=25
°
C)
Ratings
SVT042R5NT
Characteristics
Symbol
Unit
SVT042R5NL5
Drain-Source Voltage
Gate-Source Voltage
T
C
=25°C
V
DS
V
GS
40
V
V
±20
240
150
Drain Current
I
D
A
T
C
=100°C
100
174
T
C
=25
°
C(Package Limited))
Drain Current Pulsed
696
A
W
I
DM
P
D
120
250
2
Power Dissipation(T
C
=25
°
C)
-Derate above 25
°
C
0.96
W/
°
C
mJ
°
C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
612
E
AS
T
J
-55
～
+150
-55
～
+150
°
C
T
stg
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 1 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
THERMAL CHARACTERISTICS
Ratings
Characteristics
Symbol
Unit
SVT042R5NL5
SVT042R5NT
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.04
50
0.5
R
θJC
R
θJA
°
C/W
°
C/W
62.5
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, T
C
=25
°
C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
Symbol
BV
DSS
I
DSS
Test conditions
V
GS
=0
V
,
I
D
=250µA
Min.
40
—
Typ.
—
Max.
Unit
V
—
1.0
V
DS
=40
V
,
V
GS
=0V
—
µA
nA
V
I
GSS
V
GS
=±20
V
,
V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
=10
V
,
I
D
=50
A
（
PDFN5*6
）
V
GS
=10
V
,
I
D
=100A(TO-220)
f=1MHz
—
—
±100
3.8
V
GS(th)
2.2
—
—
1.8
2.0
4.0
5700
770
520
27
2.4
R
DS(on)
m
Ω
On State Resistance
Gate Resistance
2.5
R
G
C
iss
C
oss
C
rss
t
d(on)
t
r
Ω
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
f=1MHz,V
GS
=0
V
,
V
DS
=25V
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Turn-on Delay Time
V
DD
=20
V
,
V
GS
=10
V
, R
G
=2.7
Ω,
Turn-on Rise Time
89
I
D
=30A
Turn-off Delay Time
t
d(off)
t
f
135
117
108
34.4
30.6
(Note 2,3)
Turn-off Fall Time
T
o
tal Gate Charge
Q
g
V
DD
=32
V
,
V
GS
=10
V
,
I
D
=50A
(Note 2,3)
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Integral Reverse P-N Junction
Diode in the MOSFET
Min.
Typ.
Max.
Unit
Continuous Source Current
I
S
—
—
174
A
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
I
SM
V
SD
T
rr
—
—
—
—
—
—
696
1.0
—
I
S
=50A,V
GS
=0V
I
S
=50A,V
GS
=0
V
,
dIF/dt=100A/µs
V
30
ns
µC
Q
rr
0.03
—
1.L=1mH, V
DD
=38
V
,
R
G
=10
Ω
,starting T
J
=25
°
C;
2.
Pulse
T
e
st: Pulse width ≤300μs,Duty cycle≤2%;
3.Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 2 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
TYPICAL CHARACTERISTICS
Figure 2. Transfer Characteristics
1000
Figure 1. Output Characteristics
400
300
200
100
0
-55°C
25°C
150°C
VGS=10.0V
VGS=7.0V
VGS=5.5V
VGS=5.5V
VGS=5.0V
VGS=4.5V
100
10
1
Notes:
1.250µS pulse test
2.Tc=25°C
Notes:
1.VDS=5V
2.250µS pulse
test
0.1
0
1
2
3
4
5
2
3
4
5
6
Drain-source Voltage – V
DS
(V)
Gate-source Voltage – V
GS
(V)
Figure 3. On-resistance vs. Drain
Current
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
2.5
2.3
2.1
1.9
1.7
1.5
1000
Notes:
1. V
GS
=0V
2. 250µS Pulse test
100
10
1.0
0.1
-55°C
25°C
150°C
Note:
1.Tc=25°C
0
30
60
90
120
150
0.2
0.4
0.6
0.8
1
1.2
Drain Current – I
D
(A)
Source-Drain Voltage – V
SD
(V)
Figure 6. Gate Charge
Figure 5. Capacitance Characteristics
12
10
9000
8000
7000
6000
5000
4000
3000
C
iss
=C
gs
+C
gd
(C
ds
=short circuit)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
V
DS
=32V
V
DS
=20V
C
iss
V
DS
=8V
8
6
4
2
0
C
oss
Notes:
1. V
GS
=0V
2. f=1MHz
2000
C
rss
1000
Note: I
D
=50A
0
0.1
1
10
100
0
50
100
nC
150
Gate Charge – Q
G
(
)
Drain-Source Voltage – V
DS
(V)
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 3 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 8. On-resistance vs. Temperature
Figure 7. Breakdown Voltage vs.
Characteristics
Temperature Characteristics
1.2
3.0
2.5
2.0
1.5
1.0
1.1
1.0
0.9
0.5
Notes:
1. V
GS
=0V
2. I
D
=250uA
Notes:
1. V
GS
=10V
2. I
D
=50A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100 150
200
Junction Temperature – T
J
(°C)
Junction Temperature – T
J
(°C)
Figure 9-2. Max. Safe Operating Area
(SVT042R5NT)
Figure 9-1. Max. Safe Operating Area
(SVT042R5NL5)
1000
100
10
1000
0.1ms
0.1ms
1ms
1ms
10ms
10ms
100
10
1
DC
DC
1
Max. junction temperature: 150°C
Max. reference temperature: 25°C
Max. junction temperature: 150°C
Max. reference temperature: 25°C
0.1
0.1
0.1
Drain Source Voltage–V
DS
(V)
0.01
1
10
100
0.1
Drain Source Voltage–V
DS
(V)
0.01
1
10
100
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 4 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
V
GS
Same Type
as DUT
Qg
10V
50K
Ω
V
DS
200nF
12V
300nF
Qgs
Qgd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveform
R
L
V
DS
V
DS
90%
V
GS
V
DD
R
G
DUT
10%
GS
V
10V
td(on)
tr
td(off)
t
f
t
on
t
off
Unclamped Inductive Switching Test Circuit & Waveform
1
BV
DSS
2
E
AS
=
LI
AS
L
2
–
BV
DSS
V
DD
V
DS
BV
DSS
I
D
I
AS
R
G
DUT
I
D(t)
V
DD
10V
V
DS(t)
V
DD
tp
Time
tp
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 5 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
PACKAGE OUTLINE
PDFN-8-5X6X0.95-1.27
UNIT: mm
Min
0.90
NOM
1.10
Max
1.30
0.354
5.50
6.16
SYMBOL
A
c
0.154
4.90
5.56
0.254
5.20
D
E
5.86
D1
E1
4.10
6.15
4.30
6.45
0.60
3.80
5.85
0.20
1.10
1.07
3.52
0.36
—
b
0.40
1.30
1.27
K
1.50
1.37
e
E4
3.72
0.66
—
3.92
L
0.76
0.12
L1
H
0.50
0.70
0.30
TO-220-3L
UNIT: mm
4.30
4.50
4.70
1.50
2.80
1.00
1.80
0.60
1.00
1.30
2.40
0.80
1.00
1.60
0.30
0.70
16.10
10.00
15.10
15.70
9.20
8.10
9.60
9.90
10.40
2.54BSC
6.50
6.10
7.00
13.60
12.60
13.08
3.95
3.90
3.20
3.40
2.60
3.70
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 6 of 7
Silan
Microelectronics
SVT042R5NL5_Datasheet
Disclaimer :
•
Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
•
Silan will supply the best possible product for customers!
Part No.:
Copyright:
SVT042R5NL5
Document Type:
Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Rev.:
1.2
Revision History:
1. Update
the value of I
D
2. Update
the SOA
3. Update
the package outline of TO-220-3L
Rev.:
Revision History:
1. Add
the package outline of TO-220-3L
Rev.:
1.0
Revision History:
1.1
1. First
release
HANGZHOU SILAN MICROELECTRONICS CO.,
L
T
D
Rev.:1.2
Page 7 of 7
