High-Diode-2N7002

2N7002  

HD-ST0.36*0.36  

SOT-23 Plastic-Encapsulate MOSFET  

N -Channel MOSFET  

roduct Summary  

P

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

SOT- 23  

@

Ω

10V  

5

D

V

6

0  

115

m  

A

@

7

Ω 5V  

S

Features  

MOSFET (N-Channel)  

●

●

G

High density cell design for low R

DS(ON)  

Voltage controlled small signal switch  

Rugged and reliable  

●

●

●

High saturation current capability  

Applications  

●

●

Load Switch for Portable Devices  

DC/DC Converter  

Marking:  

●

7002  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

V

G

S  

I

D  

60  

2

0  

V

V

A

Gate

-Source Voltage  

Continuous Drain Current  

Power Dissipation  

0.115  

P

D  

R

θ

JA  

T

J  

0.225  

556  

W

Thermal Resistance from Junction to Ambient  

Junction Temperature  

℃

/W  

150  

℃

Storage Temperature  

T

stg  

-50 ~+150  

1

H

igh Diode Semiconductor  

Electrical Characteristics (T =25

 

unless otherwise noted)  

℃

A

Parameter  

Symbol  

Test  

conditions  

M

in  

T

yp  

M

ax  

Unit  

Drain-Source Breakdown Voltage  

Gate-Threshold Voltage  

V

(BR)DSS  

V

th(GS)  

l

GSS  

60  

1

V

GS

=0

V

,

I

D

=

25

0

µ

A  

V

DS

=V

GS

, I

D

=250

µ

A  

V

DS

=0

V

,

V

GS

=

±2

0

V  

V

DS

=60

V

,

V

GS

=0 V  

V

GS

=10

V

,

V

DS

=7 V  

V

GS

=10

V

,

I

D

=500

m

A  

V

1.6  

2.5  

±80  

80  

Gate-body Leakage  

nA  

nA  

Zero Gate Voltage Drain Current  

On-state Drain Current  

I

DSS  

I

D(ON)  

500  

80  

mA  

0.9  

5

Drain-Source On-Resistance  

Forward Trans conductance  

Drain-source on-voltage  

Diode Forward Voltage  

R

DS(

o

n)  

g

fs  

Ω

V

GS

=5

V

,

I

D

=50

m

A  

1.1  

7

V

DS

=10

V

,

I

D

=200

m

A  

V

GS

=10

V

,

I

D

=500

m

A  

ms  

V

3.75  

0.375  

1.2  

50  

V

DS(on)  

V

GS

=5

V

,

I

D

=50

m

A  

V

V

SD  

C

iss  

C

oss  

C

r

ss  

I

S

=115mA, V

GS

=0 V  

0.55  

V

Input Capacitance  

*

V

pF  

Output Capacitance

*  

25  

Reverse Transfer Capacitance

*  

5

Ω

,  

V

DD

=25

V

, R

L

=50  

Turn-on Time  

t

d(on)  

t

d(off)  

20  

40  

*

ns  

I

D

=500mA,V

GEN

=10 V  

Turn-off Time  

*

R

G

=25

Ω  

*These parameters have no way to verify.  

2

H

igh Diode Semiconductor  

Typical Characteristics  

Transfer Characteristics  

Output Characteristics  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

T =25

℃

 

T

a

=25

℃  

V

GS

=10V,9V,8V,7V,6V  

a

V

GS

=5V  

Pulsed  

Pulsed  

V

GS

=4V  

V

GS

=3V  

0

1

2

3

4

5

0

2

4

6

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

R

DS(ON)

——  

I

D  

R

DS(ON)

—— V

GS  

3

2

1

0

6

4

2

0

T

a

=25

℃  

T

a

=25

℃  

Pulsed  

Pulsed  

V

GS

=5V  

I

D

=500mA  

I

D

=50mA  

V

GS

=10V  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

0

6

12  

18  

DRAIN CURRENT

 

I

D

(A)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

I

S

—— V

SD  

2

T

a

=25

℃  

1

Pulsed  

0.3  

0.1  

0.03  

0.01  

3E-3  

1E-3  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

3

H

igh Diode Semiconductor  

SOT-23

Package Outline Dimensions  

SOT-23

Suggested Pad Layout  

JSHD  

JSHD  

4

H

igh Diode Semiconductor  

Reel Taping Specifications For Surface Mount Devices-SOT-23  

30  

5

H

igh Diode Semiconductor