High-Diode-HD2307

Part #	High-Diode-HD2307
Download	High-Diode-HD2307

HD2307

SOT-23 Plastic-Encapsulate MOSFET

P -Channel MOSFET

roduct Summary

P

I

D

V

(BR)DSS

R

DS(on)

MAX

SOT- 23

@

Ω

–

10

V

88

m

D

V

–

30

–

2

.

7

A

@

138

m

Ω

–

4

.

5

V

S

Features

●

TrenchFET Power MOSFET

G

●

Excellent R

DS(on)

and Low Gate Charge

Applications

●

●

Load Switch for Portable Devices

DC/DC Converter

Marking:

●

S7

Symbol

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

a,b

Continuous Source-Drain Current

a,b

Power Dissipation

a,b

V

DS

V

GS

I

D

-30

±20

V

-2.7

A

I

S

-0.91

1.1

P

D

W

Thermal Resistance from Junction to Ambient (t

≤

5s

)

Operating Junction Temperature

Storage Temperature

R

θ

JA

T

J

114

℃

/W

150

℃

T

stg

-55 ~+150

1

H

igh Diode Semiconductor

Electrical Characteristics (T =25

unless otherwise noted)

℃

A

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Source Leakage

V

(BR)DSS

V

GS(th)

I

GSS

V

GS

= 0V, I

D

=-250µA

V

DS

=V

GS

, I

D

=-250µA

V

DS

=0V, V

GS

=±20V

V

DS

=-30V, V

GS

=0V

V

DS

=-30V, V

GS

=0V,

T

J

=55

℃

V

GS

=-4.5V, I

D

=-2.5A

V

GS

=-10V, I

D

=-3.5A

V

DS

=-10V, I

D

=-3.5A

-30

-1

V

-3

±100

-1

nA

µA

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

c

I

DSS

-10

0.110

0.073

7

0.138

0.088

R

DS(on)

g

fs

Ω

Forward Transconductance

c

Dynamic

d

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

C

iss

C

oss

C

rss

Q

g

340

67

V

DS

=-15V,V

GS

=0V,f =1MHz

pF

51

4.1

1.3

1.8

10

6.2

V

DS

=-15V,V

GS

=-4.5V,

I

D

=-2.5A

nC

Q

gs

Q

gd

R

g

f =1MHz

Ω

Turn-On Delay Time

Rise Time

t

d(on)

t

r

t

d(off)

t

f

40

60

60

40

30

V

DD

=-15V,

40

R

L

=15

ꢀ

,

I

D

=-1A,

ns

V

Turn-Off Delay Time

Fall Time

20

V

GEN

=-4.5V,Rg=1

ꢀ

17

Drain-source Body diode characteristics

-1.2

Body Diode Voltage

V

SD

I

S

=-0.75A, ,V

GS

=0

-0.8

Notes:

a. t=5s.

b. Surface mounted on 1” ×1” FR4 board.

c. Pulse

T

e

st : Pulse Width < 300µs, Duty Cycle

≤

2%.

d. Guaranteed by design, not subject to production testing.

2

H

igh Diode Semiconductor

Typical Characteristics

Output Characteristics

Transfer Characteristics

-20

-16

-12

-8

-10

-8

V

GS

=-10V,-8V,-6V

T

a

=25

℃

T

a

=25

℃

Pulsed

Pulsed

V

GS

=-4.5V

V

GS

=-4.0V

V

GS

=-3.5V

-6

-4

V

GS

=-3.0V

-4

-2

-0

-0

-0

-1

-2

-3

-4

-5

-0

-1

-2

-3

-4

-5

GATE TO SOURCE VOLTAGE

V

GS

(V)

DRAIN TO SOURCE VOLTAGE

V

DS

(V)

R

DS(ON)

—— I

D

R

DS(ON)

—— V

GS

300

250

200

150

100

50

500

400

300

200

100

0

T

a

=25

℃

T

a

=25

℃

Pulsed

Pulsed

V

GS

=-4.5V

I

D

=-3.5A

V

GS

=-10V

-0

-4

-8

-12

-16

-20

-0

-4

-8

-12

-16

-20

DRAIN CURRENT

I

D

(A)

GATE TO SOURCE VOLTAGE

V

GS

(V)

I

S

—— V

SD

-10

T

a

=25

℃

Pulsed

-1

-0.1

-0.01

-0.0

-0.3

-0.6

-0.9

-1.2

-1.5

SOURCE TO DRAIN VOLTAGE

V

SD

(V)

3

H

igh Diode Semiconductor

SOT-23

Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min

Max

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

c

D

E

E1

e

e1

L

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

0.950 T

Y

P

0.550 REF

0.037 T

Y

P

0.022 REF

1.800

2.000

0.071

0.079

L1

θ

0.300

0°

0.500

8°

0.012

0°

0.020

8

°

SOT-23

Suggested Pad Layout

JSHD

JSHD

4

H

igh Diode Semiconductor

Reel Taping Specifications For Surface Mount Devices-SOT-23

30

5

H

igh Diode Semiconductor