High-Diode-HD2310

HD2310  

SOT-23 Plastic-Encapsulate MOSFET  

N -Channel MOSFET  

roduct Summary  

P

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

SOT- 23  

@

1

0

V  

Ω

105

m

 

D

6

0  

V

3

A  

@

12

5

m

Ω

4

.

5V  

S

Features  

High power and current handing capability  

Lead free product is acquired  

Surface mount package  

●

●

●

G

Applications  

●

DC/DC Converters  

●

Battery Switch  

Marking:  

●

S10  

Parameter  

Symbol  

V

DS  

V

GS  

I

D  

Value  

60  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

Continuous Drain Current  

V

V

±20  

3

A

Pulsed Drain Current

(note 1)  

Power Dissipation  

I

DM  

10  

A

P

D  

0.35  

357  

W

Thermal Resistance from Junction to Ambient (note 2)  

Junction Temperature  

R

θ

JA  

T

J  

℃

/W  

℃

150  

Storage Temperature  

T

STG  

-55~+150  

℃

1

H

igh Diode Semiconductor  

Electrical Characteristics (T =25

 

unless otherwise noted)  

℃

A

Parameter  

Symbol  

Test Condition  

Min  

Type  

Max  

Unit  

STATIC CHARACTERISTICS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

Gate Threshold Voltage

3  

V

(BR)DSS  

I

DSS  

V

GS

= 0

V

,

I

D

=250µA  

60  

V

µA  

nA  

V

V

DS

=60

V

,

V

GS

= 0V  

V

GS

=±20

V

,

V

DS

= 0V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10V, I

D

=3A  

V

GS

=4.5V, I

D

=3A  

V

DS

=15V, I

D

=2A  

1

±100  

2

I

GSS  

V

GS(th)  

0.5  

1.4  

1.2  

70  

105  

125  

Drain-Source On-Resistance

3  

R

DS(on)  

g

FS  

mΩ  

82  

Forward Tranconductance

3  

DYNAMIC CHARACTERISTICS

4  

Input Capacitance  

2.5  

S

C

iss  

C

oss  

C

rss  

250  

26  

Output Capacitance  

V

DS

=30V,V

GS

=0V,f =1MHz  

pF  

Reverse Transfer Capacitance  

SWITCHING CHARACTERISTICS

4  

Total Gate Charge  

20  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

7

Gate-Source Charge  

V

DS

=30V,V

GS

=4.5V,I

D

=3A  

V

GS

=10V,V

DD

=30V,I

D

=1.5A,R

GEN

=1Ω  

I

S

=3A,V

GS

=0V  

1.2  

nC  

ns  

V

Gate-Drain Charge  

1.5  

Turn-On Delay Time  

6.5  

Turn-On Rise Time  

15.2  

15.2  

10.3  

Turn-Off Delay Time  

t

d(off)  

t

f  

Turn-Off Fall Time  

Source-Drain Diode characteristics

4  

Body Diode Voltage  

V

SD  

0.8  

1.2  

Notes :  

1. Repetitive rating : Pulse width limited by junction temperature.  

2. Surface mounted on FR4 board , t≤10s.  

3.

Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.  

4. Guaranteed by design, not subject to producting.  

2

H

igh Diode Semiconductor  

Typical Characteristics  

Output Characteristics  

Transfer Characteristics  

15  

12  

9

2.0  

1.6  

1.2  

0.8  

0.4  

0.0  

V

GS

=10V  

V

GS

=4.5V  

T

a

=25

℃

 

V

DS

=3V  

Pulsed  

Pulsed  

V

GS

=3V  

T

a

=25℃  

T

a

=125℃  

6

V

GS

=2.5V  

3

0

0

1

2

3

4

5

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

DRAIN TO SOURCE VOLTAGE V

GS

(V)  

GATE TO SOURCE VOLTAGE V

GS

(V)  

R

DS(ON)

– V

GS  

R

DS(ON)



I

D  

250  

200  

150  

100  

50  

140  

120  

100  

80  

Pulsed  

T

a

=25

℃

 

Pulsed  

I

D

=3A  

V

GS

=4.5V  

V

GS

=10V  

T

a

=25℃  

60  

40  

20  

0

0

2

4

6

8

10  

0

2

4

6

8

10  

GATE TO SOURCE VOLTAGE V

GS

(V)  

DRAIN CURRENT I

D

(A)  

Threshold Voltage  

I

S

– V

SD  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

10  

Pulsed  

1

I

D

=250uA  

T

a

=125℃  

T

a

=25℃  

0.1  

0.01  

25  

50  

75  

100  

125  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

SOURCE TO DRAIN VOLTAGE V

SD

(V)  

JUNCTION TEMPERATURE T

j

(

℃

)  

3

H

igh Diode Semiconductor  

SOT-23

Package Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

0.950 T

Y

P  

0.550 REF  

0.037 T

Y

P  

0.022 REF  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8

°  

SOT-23

Suggested Pad Layout  

JSHD  

JSHD  

4

H

igh Diode Semiconductor  

Reel Taping Specifications For Surface Mount Devices-SOT-23  

30  

5

H

igh Diode Semiconductor