High-Diode-S9014

S9014  

SOT-23 Plastic-Encapsulate Transistors  

TRANSISTOR( NP

 

N )  

Features  

SOT- 23  

●

Complementary

to

S9015  

Marking:  

●

J6  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Value  

50  

Unit  

V

C

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

45  

V

5

Collector Current  

100  

mA  

mW  

℃

/W  

℃

Collector Power Dissipation  

Thermal Resistance From Junction

T

o Ambient  

Junction

T

e

m

perature  

200  

P

C  

E

B

R

ΘJA  

T

j  

625  

150  

Storage

T

e

m

perature  

T

stg  

-55

～

+150  

℃

Electrical Characteristics (Ta=25

℃

Unless otherwise specified

）

 

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  

I

C

= 100

μ

A, I

E

=0  

I

C

= 0.1mA, I

B

=0  

I

E

=100

μ

A, I

C

=0  

M

in  

50  

45  

5

T

yp  

M

ax  

Unit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

V

CB

=50 V ,

 

I

E

=0  

V

CE

=35V ,

 

I

B

=0  

V

EB

= 3V ,

 

I

C

=0  

0.1  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

I

CEO  

1

0.1  

1000  

0.3  

1

Emitter cut-off current  

I

EBO  

DC current gain  

h

FE  

V

CE

=5

V

,

I

C

= 1mA  

I

C

=100 mA, I

B

= 5mA  

I

C

=100 mA, I

B

= 5mA  

200  

150  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE

(sat)  

V

BE

(sat)  

V

V

V

CE

=5

V

,

I

C

= 10mA  

f=

30MHz  

Transition frequency  

f

T  

MHz  

CLASSIFICATION OF

h

FE  

L

H

Rank  

200-450  

450-1000  

Range  

1

H

igh Diode Semiconductor  

Typical Characteristics  

h

FE

——  

I

C  

Static Characteristic  

8

6

4

2

0

1000  

100  

10  

COMMON  

EMITTER  

T

a

=25

℃

 

T

a

=100

℃  

20uA  

18uA  

16uA  

14uA  

12uA  

10uA  

T

a

=25

℃  

8uA  

6uA  

4uA  

COMMON EMITTER  

V

CE

= 5V  

I

B

=2uA  

0

2

4

6

8

0.1  

1

10  

100  

100  

100  

150  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

CEsat

—— I

C  

V

BEsat

——  

I

C  

1

2

1

T

a

=25

℃  

0.1  

T

a

=100

℃  

T

a

=100

℃  

T

a

=25

℃  

β

=20  

β

=20  

0.01  

0.1  

0.1  

0.1  

1

10  

100  

1.2  

20  

1

10  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

I

C

——  

f

T

——  

I

C  

V

BE  

100  

1000  

100  

10  

T

a

=100

℃  

10  

T

a

=25

℃  

1

COMMON EMITTER  

V

CE

=5V  

COMMON EMITTER  

V

CE

= 5V  

T

a

=25

℃  

0.1  

1

0.1  

0.0  

0.3  

0.6  

0.9  

1

10  

BASE-EMMITER VOLTAGE

 

V

BE

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

C

ob

/ C

ib

—— V

CB

/ V

EB  

P

C

—— T

a  

100  

10  

1

250  

200  

150  

100  

50  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

C

ob  

0.1  

0

0.1  

1

10  

0

25  

50  

75  

100  

125  

REVERSE VOLTAGE

 

V

R

(V)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

2

H

igh Diode Semiconductor  

SOT-23

Package Outline Dimensions  

SOT-23  

Suggested Pad Layout  

JSHD  

JSHD  

3

H

igh Diode Semiconductor  

Reel Taping Specifications For Surface Mount Devices-SOT-23  

30  

4

H

igh Diode Semiconductor