HL-100N02
| Part # | HL-100N02 |
Download  | HL-100N02 |
N-Ch 20V Fast Switching MOSFETs
10
0
N
0
2
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
20V
2.7mΩ
100A
100% EAS Guaranteed
Description
TO252 Pin Configuration
The 100N02
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 100N02
meet the RoHS and Green Product,
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
20
V
V
Drain-Source
Voltage
Gate-Sou
r
ce
V
oltage
DS
GS
±20
100
Continuous
Drain Current, V
GS
@ 10V
1,6
Continuous
Drain Current, V
GS
@ 10V
1,6
A
D
@T
C
=25
℃
59
360
A
D
@T
C
=100
℃
A
Pulsed
Drain Current
2
DM
118
mJ
A
Single
Pulse Avalanche Energy
3
41
Avalanche
Current
AS
88
W
℃
℃
Total
Power Dissipation
4
D
@T
C
=25
℃
-55 to 150
-55 to 150
Storage Temperature
Range
STG
Junction Temperature Range
J
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-Case
1
Typ.
Max.
Unit
R
θ
JC
—
1.8
℃
/W
01
N-Ch 20V Fast Switching MOSFETs
100N02
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
T
e
st Condition
Min.
Typ.
Max.
Units
Off Characteristic
–
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
V
I
DSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
DS
=20V, V
GS
=0V
μ
A
nA
I
GSS
GS
= ±12V, V
DS
=0V
–
±100
On Characteristics
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=4.5V, I
GS
=2.5V, I
D
=250
μ
A
V
D
=30A
=20A
–
Static Drain-Source On-Resistance
R
m
Ω
note
3
D
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=10V, V
GS
=0V,
C
oss
Output Capacitance
f=1.0MHz
C
rss
Reverse Transfer Capacitance
Total Gate Charge
Q
g
V
DS
=10V, I =30A,
D
Q
Q
gs
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
V
GS
=4.5V
Switching Characteristics
t
d(on)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
DS
=10V, I =30A,
G
D
t
d(o
f
f)
R =1.8
Ω
, V
GS
=4.5V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
A
A
I
SM
Drain to Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V, I
SD
=30A,
=25
℃
=25°C, I =30A,
1.2
V
SD
rr
rr
–
–
V
T
T
J
t
–
–
–
–
ns
J
F
Q
di/dt =100A/
μ
s
nC
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃, V
DD
=15V, V
G
=4.5V, L=0.5mH, R
G
=25Ω, I
AS
=21A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 20V Fast Switching MOSFETs
100N02
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
N-Ch 20V Fast Switching MOSFETs
1
0
0
N
0
2
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Figure 9: Maximum safe operating area
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
du
r
m
a
i
n
C
o
c
u
n
r
t
r
i
n
e
n
u
t
o
v
us.
D
c
r
a
a
s
i
e
nt
C
e
u
m
r
p
r erature
Figure 11:Maximum Effective Transient
Thermal Impedance, Junction-to-Casense curve
04
N-Ch 20V Fast Switching MOSFETs
100N02
Package Mechanical Data-TO-252-4R
E
Dimensions
Millimeters
C2
B2
Ref.
Inches
T
y
p.
Min.
2.1
T
y
p.
Max.
2.5
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0
0.1
0.66
5.18
0.4
0.86
5.48
0.6
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
0.44
5.9
0.58
6.3
C
B
D1
E
5.30REF
0.209REF
G
DETA IL
A
6.4
6.8
0.252
0.182
0.176
0.374
0.043
0.053
0.268
E1
G
4.63
4.47
9.5
4.67
10.7
1.21
1.65
0.184
0.421
0.048
0.065
H
L
1.09
1.35
TO-
L2
V1
V2
E1
7°
7°
L2
0°
6°
0°
6°
Reel Spectification-TO-252-4R
P0
P2
Dimensions
t1
Ref.
M
i
llimeters
Inches
Typ.
A
M
i
n.
15.9
1.65
7.4
Typ.
16
M
a
x
.
16.1
1.85
7.6
M
i
n.
M
a
x
.
A
W
E
0.626
0.065
0.291
0.055
0.055
0.154
0.311
0.075
0.27
0.63
0.634
0.073
0.299
0.063
0.063
0.161
0.319
0.083
0.276
0.417
0.113
0.011
1.75
7.5
1.5
1.5
4
0.069
0.295
0.059
0.059
0.157
0.315
0.079
0.271
0.413
0.109
P1
A0
F
B
K0
D0
D1
P0
P1
P2
A0
B0
K0
T
1.4
1.6
5°
1.4
1.6
3.9
4.1
7.9
8
8.1
1.9
2
2.1
6.85
10.45
2.68
0.24
0.1
6.9
10.5
2.78
7
10.6
2.88
0.27
0.411
0.105
0.009
0.004
1.567
t1
10P0
39.8
40
40.2
1.575
1.583
05
