HL-10N06
| Part # | HL-10N06 |
Download  | HL-10N06 |
N-Ch 60V Fast Switching MOSFETs
10
N
0
6
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
60V
RDSON
ID
40m
Ω
10A
SOP8 Pin Configuration
Description
The 10N06 is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 10N06 meets the RoHS and Green
Product requirement with full function reliability
approved.
Absolute Maximum Ratings
V
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
60
±20
10
V
V
T
C
= 25
℃
A
A
A
mJ
W
I
D
Continuous Drain Current
T
C
= 100
℃
6.8
30
6.3
4
I
DM
EAS
P
D
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
T =
25
℃
C
R
θ
JC
Thermal Resistance, Junction to Case
63
℃
/W
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +175
℃
01
N-Ch 60V Fast Switching MOSFETs
10N06
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
U
n
its
Off Characteristic
60
–
–
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I =250
μ
A
DS
=60V, V
GS
=0V,
DS
=0V, V
GS
=±20V
D
–
–
–
–
1
V
μ
A
nA
I
I
±100
On Characteristics
1
–
–
1.6
40
45
2.5
49
63
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
D
=15A
=10A
Static Drain-Source on-Resistance
R
m
Ω
note3
D
Dynamic Characteristics
825
49
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
C
oss
f=1.0MHz
41
C
rss
14
Q
Q
Q
g
V
DS
=30V, I
D
=4.5A,
2.9
5.2
gs
gd
V
GS
=10V
Switching Characteristics
5
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
V
R
V
DS
=30V,I
=6.7
Ω
,R
GS
=10V
D
=2A,
=3
Ω
,
2.6
16.1
2.3
t
r
L
G
t
d(o
f
f)
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
10
30
1.2
–
I
SM
S
–
–
–
–
–
–
–
–
A
A
V
ns
nC
I
Maximum Pulsed Drain to Source Diode Forward Current
acteristics
V
SD
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Re
v
e
rse Reco
v
e
ry Charge
V
T
J
GS
=0V, I
=25
℃
,
dI/dt=100A/
μ
s
S
=15A
35
trr
Qrr
I
F
=15A,
53
–
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : T
J
=25℃,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,IAS=6.1A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 60V Fast Switching MOSFETs
10N06
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
N-Ch 60V Fast Switching MOSFETs
1
0
N
0
6
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Figure 9: Maximum Safe Operating Area
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
Cuo
m
n
t
C
i
n
o
u
n
o
t
i
u
n
s
u
D
o
r
u
a
s
i
n
D
r
C
au
i
n
rr
C
e
n
u
t
rr
vs. Ambient Temperature
Figure 11:Maximum Effective Transient Thermal
Impedance, Junction-to-Ambient
04
N-Ch 60V Fast Switching MOSFETs
10N06
SOP-8 Package Information
05
