HL-2012S
| Part # | HL-2012S |
Download  | HL-2012S |
N-Ch 20V Fast Switching MOSFETs
2
0
1
2
S
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
20V
8mΩ
12A
Description
SOP8 Pin Configuration
The 2012S
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 2012S
meet the RoHS and Green Product,
requirement with
full function reliability approved.
Absolute Maximum Ratings
Sy
m
bol
Parameter
Rating
Units
Drain-Source
V
o
ltage
20
V
V
V
DS
Gate-Sou
r
ce Voltage
±
12
V
GS
Continuous Drain Current,
V
GS @ 4.5V1
12
A
I
D
@T
A
=25
℃
Continuous Drain Current,
V
GS @ 4.5V1
7
34
A
I
D
@T
A
=70
℃
Pulsed Drain Current
2
A
I
DM
Total Power Dissipation
Total Power Dissipation
3
3
3
W
W
℃
℃
P
P
D
D
@T
A
=25
℃
0.86
@T
A
=70
℃
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Data
Symbol
Parameter
Max.
Unit
Thermal Resistance Junction-ambient
1
100
℃
/W
R
θ
JA
01
N-Ch 20V Fast Switching MOSFETs
2
0
1
2
S
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
U
n
its
Off Characteristic
20
–
–
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I =250
μ
A
DS
=20V, V
GS
=0V,
DS
=0V, V
GS
=±12V
D
–
–
–
–
1
V
μ
A
nA
I
I
±100
On Characteristics
Gate Threshold Voltage
0.5
0.75
1.2
V
GS(th)
DS(on)
V
V
DS
=V
GS
, I
D
=250
μ
A
8
11.2
17.5
V
GS
=4.5V, I
D
=15A
=10A
–
–
Static Drain-Source on-Resistance
R
m
Ω
note3
11.7
V
GS
=2.5V, I
D
Dynamic Characteristics
1000
182
C
C
C
iss
oss
rss
Input Capacitance
–
–
–
–
–
–
pF
pF
pF
V
DS
=10V, V
GS
=0V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
f=1.0MHz
164
15
–
–
nC
Q
g
V
DS
=10V, I
D
=15A,
2
Q
Q
gs
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
nC
nC
V
GS
=4.5V
5.2
gd
Switching Characteristics
9
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
V
DS
=10V,I
D
=15A,
25
37
14
t
r
t
d(o
f
f)
R
GEN
=3
Ω
, V
GS
=4.5V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
40
I
SM
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
A
A
120
I
Drain to Source Diode Forward Voltage
V
GS
=0V, I
S
=30A
1.2
V
SD
–
–
V
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25℃, V
DD
=10V, V
G
=4.5V, L=0.5mH, R
G
=25Ω, IAS=9.6A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 20V Fast Switching MOSFETs
2
0
1
2
S
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5:Gate Charge Characteristics
Figure 4:Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
N-Ch 20V Fast Switching MOSFETs
2
0
1
2
S
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Figure8: Maximum Safe Operating Area
Figure 9: Maximum Continuous Drain Current
vs. Ambient Temperature
Figure 10: Maximum Effective Transient Thermal
Impedance, Junction-to-Ambient
04
2012S
N-Ch 20V Fast Switching MOSFETs
2
0
1
2
S
SOP-8 Package Information
05
