HL-20N03D
| Part # | HL-20N03D |
Download  | HL-20N03D |
N-Ch 30V Fast Switching MOSFETs
20N03D
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
30V
15mΩ
20A
100% EAS Guaranteed
Description
PDFN3*3 Pin Configuration
The 20N03D
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 20N03D
meet the RoHS and Green Product,
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Units
10s
Steady State
30
±20
V
V
1
1
20
A
8
A
38
A
28
mJ
A
13.8
5.5
W
℃
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
θ
JC
Resistance Junction-Case
1
–
/W
01
N-Ch 30V Fast Switching MOSFETs
20N03D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
30
–
–
–
–
–
1
V
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
DS
=30V, V
GS
= 0V,
DS
=0V, V
GS
= ±20V
μ
A
nA
I
V
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
1
–
1.5
15
21
2.5
20
29
V
D
=5A
=3A
m
Ω
m
Ω
Static Drain-Source on-Resistance
R
DS(on)
note3
D
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
490
79
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=15V, V
GS
=0V,
C
oss
Output Capacitance
f=1.0MHz
C
rss
Reverse Transfer Capacitance
Total Gate Charge
61
Q
g
10
Q
Q
gs
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
V
DS
=15V, I
D
=5.8A, V
GS
=10V
1.7
2.5
Switching Characteristics
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
6
–
–
–
–
ns
ns
ns
ns
t
r
15
17
17
V
R
DS
=15V, I
REN
=3
Ω
D
=3A, V
GS
=10V,
t
d(o
f
f)
t
f
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward
Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
9
36
1.2
–
A
A
I
SM
Drain to Source Diode Forward
Body Diode Reverse Recovery
Body Diode Reverse Recovery
V
SD
V
GS
=0V, I
S
=9A
–
V
trr
Qrr
7
2
ns
nC
I
F
=5A, dI/dt=100A/
μ
s
–
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃, V
DD
=10V, V
G
=4.5V, R
G
=25Ω, L=0.5mH, I
AS
=6A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 30V Fast Switching MOSFETs
20N03D
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
N-Ch 30V Fast Switching MOSFETs
20N03D
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs. Junction
T
F
e
i
m
g
u
p
r
er
8
a
:
t
u
N
r
o
e
r
malized on Resistance vs. Junctio
Figure 9: Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
04
N-Ch 30V Fast Switching MOSFETs
20N03D
Test Circuit
05
N-Ch 30V Fast Switching MOSFETs
20N03D
Package Mechanical Data- PDFN3.3X3.3-8L
Symbol
A
A1
b
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
0.70
/
0.75
/
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14°
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12°
K
L
L1
t
θ
10°
06
