HL-20N06
| Part # | HL-20N06 |
Download  | HL-20N06 |
N-Ch 60V Fast Switching MOSFETs
20
N
0
6
D
Green Device
Product Summary
Super Low Gate
Excellent CdV/dt effect decline
Advanced high cell density Trench
BVDSS
RDSON
ID
technology
60V
28mΩ
20A
100% EAS Guaranteed
PDFN3* 3 Pin Configuration
Description
The 20N06D is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 20N06D meets the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Package Marking and Ordering Information
Device Marking
Device
Device Package
PDFN3*3
Reel Size
Tape width
Quantity
20N06
20N06
5000
Absolute Maximum Ratings
60
V
Drain-Source
V
o
ltage
V
DS
Gate-Sou
r
ce Voltage
Continuous Drain Current,
V
GS
@ 10
V
1
Continuous Drain Current,
V
GS
@ 10
V
1
±
20
V
V
GS
20
A
I
D
@T
C
=25
℃
10
A
I
D
@T
C
=100
℃
Pulsed Drain Current
2
46
A
I
DM
Single Pulse
A
v
a
lanche Energ
y
3
25.5
mJ
A
EAS
Av
a
lanche Current
20
I
AS
Total Power Dissipation
4
34.7
W
℃
℃
P
D
@T =25
℃
A
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
62
Unit
R
θ
JA
Thermal Resistance Junction-
A
m
bient
1
℃
/W
01
N-Ch 60V Fast Switching MOSFETs
20N06D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
60
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
μ
A
nA
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
DS
=60V, V
GS
= 0V,
DS
=0V, V
GS
= ±20V
–
–
±100
On Characteristics
1
–
–
1.6
28
36
2.5
40
50
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
D
=5A
=3A
Static Drain-Source on-Resistance
note3
R
DS(on)
m
Ω
D
Dynamic Characteristics
1148
58.5
49.4
20.3
3.7
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
=30V, I
D
=2.5A,
gs
V
GS
=10V
5.3
gd
Switching Characteristics
7.6
20
15
24
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
R
DS
=30V, I
D
=5A,
t
d(o
f
f)
G
=1.8
Ω
, V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
5
I
S
–
–
–
–
–
–
A
A
V
20
1.2
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
o
ltage
V
SD
V
GS
=0V, I
S
=5A
Body Diode Reverse Recovery
Time
29
43
trr
–
–
–
–
ns
aracteristics
I
F
=5A, dI/dt=100A/
μ
s
Body Diode Re
v
e
rse Reco
v
e
ry Charge
Qrr
nC
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : T
J
=25℃,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,IAS=8.7A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 60V Fast Switching MOSFETs
20N06D
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
N-Ch 60V Fast Switching MOSFETs
2
0
N
0
6
D
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
0.01
Figure 9:Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure 11:Maximum Continuous Drain Current vs.
Ambient Temperature
Figure 10:Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
04
N-Ch 60V Fast Switching MOSFETs
20N06D
Test Circuit
05
N-Ch 60V Fast Switching MOSFETs
20N06D
Package Mechanical Data- PDFN3.3X3.3-8L
05
