HL-20P02D
| Part # | HL-20P02D |
Download  | HL-20P02D |
P-CH 20V Fast Switching MOSFETs
20
P
0
2
D
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
-20V
15mΩ
-20A
PDFN3*3
Pin Configuration
Description
The 20P02D is the high cell density trenched
P-ch MOSFETs, which provides excellent
RDSON and gate charge for
most of
the
synchronous buck
converter applications
The 20P02D meets the RoHS and Green
Product requirementﾠwith full function
reliability approved.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
V
DSS
GSS
-20
±12
V
V
V
T
T
A
A
= 25
℃
= 100
℃
-20
-12
A
A
I
D
Continuous Drain Current
I
P
R
DM
Pulsed Drain Current
note1
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
-28
5
62.5
-55 to +150
A
D
T
A
= 25
℃
W
℃
/W
℃
θ
JA
T , T
STG
J
01
P-CH 20V Fast Switching MOSFETs
20P02D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I
DS
= -20V, V
GS
=0V,
DS
=0V, V
GS
= ±12V
D
= -250
μ
A
-20
–
–
–
–
–
–
-1
±100
V
μ
A
nA
I
I
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
= -4.5V, I
GS
= -2.5V, I
D
= -250
μ
A
-0.4
–
–
-0.7
15
21
-1
20
32
V
m
Ω
D
= -7A
= -5A
Static Drain-Source on-Resistance
R
DS(on)
note2
D
Dynamic Characteristics
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
2000
242
231
15.3
2.2
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -10V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
= -10V, I = -3A,
D
gs
gd
V
GS
= -4.5V
4.4
Switching Characteristics
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
10
31
28
8
–
–
–
–
ns
ns
ns
ns
t
r
V
DD
= -10V, I = -7A,
D
t
d(o
f
f)
V
GS
= -4.5V, R
GEN
=2.5
Ω
t
f
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward Current
I
S
–
–
–
–
–
-20
-28
-1.2
A
A
V
racteristics
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
V
SD
Drain to Source Diode Forward Voltage V
GS
=0V, I
S
= -7A
-0.8
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
02
P-CH 20V Fast Switching MOSFETs
20P02D
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5:Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
P-CH 20V Fast Switching MOSFETs
2
0
P
0
2
D
Typical Performance Characteristics
Figure 7:Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Figure 9: Maximum Safe Operating Area
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
Cuo
m
n
t
C
i
n
o
u
n
o
t
i
u
n
s
u
D
o
r
u
a
s
i
n
D
r
C
au
i
n
rr
C
e
n
u
t
rr
vs. Ambient Temperature
Figure 11:Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
04
P-CH 20V Fast Switching MOSFETs
20P02DD
Package Mechanical Data-PDFN3x3-8L
05
