HL-2309
| Part # | HL-2309 |
Download  | HL-2309 |
P-CH 60V Fast Switching MOSFETs
2
30
9
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
-60V
160mΩ
-2.0A
Description
SOT23 Pin Configuration
The 2309
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
efficiency for most
of the
small power swtiching
and load swtich
applications.
The 2309
meet the RoHS and Green Product
requirement with
full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Value
±20
Unit
V
GS
Gate-Source voltage
V
A
I
D
Continuous Drain Current
-2
I
DM
Pulsed Drain Current
1
-5.2
A
P
D
Power Dissipation
Junction Temperature
Storage Temperature
1
W
T
J
150
°C
°C
°C/W
T
STG
-55~ 150
125
R
θ
JA
Thermal Resistance from Junction to
A
m
bient
2
01
P-CH 60V Fast Switching MOSFETs
2
30
9
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Condition
Min
Typ
Max
U
n
it
Static Electrical Characteri
s
tics @ T
J
= 25°C (unle
s
s
o
therwi
s
e st
a
ted)
Drain-Source Breakdown
V
o
ltage
Zero Gate Voltage Drain Current(T
V
GS
=0
V
I
D
=-250
μ
A
-60
—
—
—
—
V
V
(BR)DSS
A
=25
℃
)
V
DS
=-60
V
, V
GS
=0V
DS
=-60
V
, V
GS
=0V
GS
=±20
V
, V
DS
=0V
DS
=V
GS
, I
=-250
μ
A
GS
=-10
V
, I
=-2A
GS
=-4.5V, I
=-1A
-1
μ
A
I
DSS
Zero Gate Voltage Drain Current(T
A
=125
℃
)
V
—
—
—
—
-100
uA
nA
Gate-Body Leakage Current
V
±100
I
GSS
Gate Threshold
V
o
ltage
V
D
-1
—
-1.5
160
200
-2.5
200
300
V
V
R
R
GS(TH)
DS(ON)
DS(ON)
Drain-Source On-State Resistance
②
Drain-Source On-State Resistance
②
V
D
m
Ω
m
Ω
V
D
—
Dynamic Electrical Characteri
s
tics @ T
J
= 25°C (unle
s
s
o
therwi
s
e st
a
ted)
Input Capacitance
—
—
—
—
—
—
310
22
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
C
iss
Output Capacitance
V
DS
=-30
V
, V
GS
=0
V
,f=1MHz
C
C
oss
rss
Re
v
e
rse Transfer Capacitance
Total Gate Charge
15
5.4
1.1
1.6
Q
Q
Q
g
Gate Source Charge
Gate Drain Charge
V
DS
=-30V I
D
=-2
A
, V
GS
=-10V
gs
gd
Switching Characteri
s
tics
Turn on Delay Time
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
—
—
–
41
22
25
32
—
—
—
—
ns
ns
ns
ns
t
d(on)
t
r
V
DD
=-30
V
, I
D
=-2
A
,
R
G
=3.3
Ω
,
V
GS
=-10V
t
d(o
f
f)
—
t
f
Source Drain Diode Characteri
s
tics
Source drain current(Body Diode)
T
A
=25
℃
—
—
—
-2
A
V
I
V
SD
Forward on
v
o
ltage
②
T
j
=25
℃
, I
SD
=-2
A
,,V
GS
=0V
-0.84
-1.2
SD
Note :
1.Pulse width limited by maximum allowable junction temperature.
2.Pulse Test: Pulse width≤300μs, duty cycle≤2%.
02
P-CH 60V Fast Switching MOSFETs
2
30
9
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Normalized Threshold Voltage
Figure 3:Typical Transfer Characteristics
Figure 4: Drain -Source Voltage vs Gate -Sour
Figure 5:
Typical Source-Drain Diode Forward VoltageFigure 6: Maximum Safe Operating Area
03
P-CH 60V Fast Switching MOSFETs
2309
Typical Performance Characteristics
Figure 7: Typical Capacitance Vs. Drain-Source Voltage
Figure 8: Typical Gate Charge Vs. Gate-Source V
Figure 9:
Normalized Maximum Transient Thermal Impedance
Figure 10: Switching Time Test Circuit and waveforms
04
P-CH 60V Fast Switching MOSFETs
2
30
9
SOT23 Mechanical tData
DIMENSIONS
DIMENSIONS ( unit : mm )
Symbol
A
Min
0.9
0.3
2.8
—
T
y
p
1.01
0.42
2.92
1.9
Max
1.15
0.5
3
Symbol
Min
0.01
0.08
1.2
—
T
y
p
0.05
0.13
1.33
0.95
0.42
0.2
Max
0.1
0.15
1.4
—
A
1
b
p
c
D
e
E
—
e
1
H
E
2.25
0.45
—
2.4
2.55
0.55
—
L
p
0.3
—
0.5
—
Q
w
0.49
0.1
v
05
