HL-2318
| Part # | HL-2318 |
Download  | HL-2318 |
N-Ch 40V Fast Switching MOSFETs
23
1
8
Product Summary
Green Device Available
Excellent CdV/dt effect decline
Super Low Gate Charge
BVDSS
RDSON
ID
40V
30mΩ
5A
Advanced Trench MOS Technology
SOT 23 Pin Configurations
Applications
The2318 is the high cell density trenched
N ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
The 2318 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
Absolute Maximum Ratings
V
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
V
T
C
= 25
℃
5
3
20
A
A
A
W
I
D
Continuous Drain Current
Pulsed Drain Current
note1
Power Dissipation
T
C
= 100
℃
I
DM
P
D
T
C
= 25
℃
1.6
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
78
℃
/W
℃
R
θ
JA
-55 to 150
T
J
, T
STG
Thermal Data
Thermal Data
Sy
m
bol
Parameter
Typ.
—
M
a
x
.
60
Unit
Thermal Resistance Junction-ambient (Stead
y
S
tate)
Thermal Resistance Junction-Case
1
R
R
θ
JA
θ
JC
℃
/W
/W
1
—
3.2
01
N-Ch 40V Fast Switching MOSFETs
2318
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
U
n
its
Off Characteristic
40
–
–
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
V
GS
=0V, I =250
μ
A
DS
=40V, V
GS
=0V,
DS
=0V, V
GS
= ±20V
D
–
–
–
–
1
V
μ
A
nA
I
I
±100
On Characteristics
1
–
–
1.5
30
40
2.2
40
60
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
D
=4A
=3A
Static Drain-Source on-Resistance
R
m
Ω
note3
D
Dynamic Characteristics
435
58
35
11
2
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=20V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
=20V, I =3A,
D
gs
gd
V
GS
=10V
2.5
Switching Characteristics
10
8
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
V
R
DD
=20V, I =4A,
D
t
r
L
=1
Ω
, R
GEN
=3
Ω
,
29
12
t
d(o
f
f)
V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
5
20
1.2
–
I
SM
S
–
–
–
–
–
–
–
–
A
A
V
ns
nC
I
Maximum Pulsed Drain to Source Diode Forward Current
acteristics
V
SD
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
V
GS
=0V, I
=25
℃
,
=5A,dI/dt=100A/
μ
s
S
=5A
20
t
rr
T
J
cteristics
11
Q
rr
Body Diode Reverse Recovery Charge
I
F
–
Notes:
1.Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 40V Fast Switching MOSFETs
2318
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
N-Ch 40V Fast Switching MOSFETs
2
3
1
8
Typical Performance Characteristics
Figure 7:Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
Cuo
m
n
t
C
i
n
o
u
n
o
t
i
u
n
s
u
D
o
r
u
a
s
i
n
D
r
C
au
i
n
rr
C
e
n
u
t
rr
Figure 9:Maximum Safe Operating Areaermal Impedance
vs. Ambient Temperature
Figure 11:Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
04
N-Ch 40V Fast Switching MOSFETs
2318
SOT23 Mechanical tData
05
