HL-2319
| Part # | HL-2319 |
Download  | HL-2319 |
P-CH 40V Fast Switching MOSFETs
23
1
9
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
-40V
RDSON
63m
Ω
ID
-4A
SOT23 Pin Configurations
Description
The 2319 is the high cell density trenched
P-ch MOSFETs, which provides excellent
RDSON and efficiency for m ost of the small
power switching and load switch applications.
The 2319 meets the RoHS and Green
Product with full function reliability approved.
Absolute Maximum Ratings
Drain-Source
V
o
ltage
-40
V
V
DS
Gate-Source Voltage
±20
V
A
V
GS
Continuous Drain Current
T
A
= 25°C
= 25°C
-4
-20
I
D
Pulsed Drain Current
1
A
I
DM
Power Dissipation
T
A
1.2
W
°C
P
D
Operating Junction and Storage Temperature Range
-55 to 150
T
J
,T
STG
Thermal Data
Symbol
Parameter
Value
Unit
R
θ
JA
Thermal Resistance from Junction to
A
m
bient
2
104
°C/W
01
P-CH 40V Fast Switching MOSFETs
2319
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Static Characteri
s
tics
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown
V
o
ltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
V
V
GS
= 0
V
, I
DS
= -40
V
, V
GS
= 0V
DS
= 0
V
, V
GS
= ±20V
= -250
μ
A
GS
= -10
V
,I
= -5A
GS
= -4.5V,I
= -4A
D
= -250
μ
A
-40
–
–
-1.2
–
–
–
–
–
–
-1
±100
-2.5
85
V
μ
A
nA
V
I
I
V
GS(th)
Gate-Threshold
V
o
ltage
V
DS
= V
GS,
I
D
-1.5
63
80
V
V
D
R
DS(on)
Drain-Source on-Resistance
3
m
Ω
D
125
Dynamic Characteri
s
tics
4
Input Capacitance
Output Capacitance
C
iss
–
–
–
553
50
–
–
–
V
GS
= 0
V
,
V
DS
= -20
V
,
C
oss
pF
f=1.0MHz
Re
v
e
rse Transfer Capacitance
C
rss
42
Switching Characteri
s
tics
4
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
–
–
–
–
–
–
–
11.8
2.2
3
–
–
–
–
–
–
–
V
I
D
GS
= -10V ,
V
DS
= -20
V
,
= -5A
Q
gs
nC
ns
Q
gd
t
d
(
o
n)
7
t
r
V
DS
= -20
V
, V
GS
= -10V
6.5
24
7.8
t
d
(
o
ff)
Turn-off Delay Time
Fall Time
R
L
= 2.5
Ω
, R
= 3
Ω
G
t
f
Drain-Source Body Diode Characteri
s
tics
Body Diode
v
o
ltage
Continuous Source Current
3
I
S
= -5
A
,V
GS
=0V
V
DS
–
–
–
–
-1.2
-4
V
A
I
S
Diode Characteristics
Notes:
1.Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on
the user’s specific board design.
3.Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4
.
T
his value is guaranteed by design hence it is not included in the production test.
02
P-CH 40V Fast Switching MOSFETs
2319
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:Forward Characteristics of Reverse
Figure 4: RDS(ON) vs. VGS
Figure 5: RDS(ON) vs. ID
Figure 6:Normalized RDS(on) vs. Temperature
03
P-CH 40V Fast Switching MOSFETs
2
3
1
9
Typical Performance Characteristics
Figure 7:Capacitance Characteristics
Figure 8: Gate Charge Characteristics
04
P-CH 40V Fast Switching MOSFETs
2319
SOT23 Mechanical tData
05
