HL-30N06
| Part # | HL-30N06 |
Download  | HL-30N06 |
N-Ch 60V Fast Switching MOSFETs
30
N
0
6
Green Device
Product Summary
Super Low Gate
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
60V
RDSON
ID
23m
Ω
30A
100% EAS Guaranteed
TO252 Pin Configuration
Description
The 30N06 is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 30N06 meets the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Absolute Maximum Ratings
V
Gate-Source Voltage
V
DSS
GSS
Drain-Source Voltage
60
±20
30
V
V
T
T
C
C
= 25
℃
= 100
℃
A
A
I
D
Continuous Drain Current
13
I
DM
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
100
39
41.7
50
A
mJ
W
℃
/W
℃
EAS
P
R
, T
STG
D
T
C
= 25
℃
θ
JC
T
J
-55 to +175
01
N-Ch 60V Fast Switching MOSFETs
30N06
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Static Characteri
s
tics
Drain-Source Breakdown
V
o
ltage
60
–
–
±100
1
V
(BR)DSS
V
GS
= 0
V
, I
D
= 250µA
V
Gate-Body Leakage Current
–
–
l
GSS
V
DS
= 0
V
, V
GS
= ±20V
nA
T
J
=25°C
–
–
I
DSS
Zero Gate Voltage Drain Current
Gate-Threshold
V
o
ltage
V
DS
= 60
V
, V
GS
= 0V
μ
A
V
T
J
=100°C
–
–
100
2.5
32
40
–
1.2
1.7
23
31.5
15.5
V
GS(th)
DS(on)
V
DS
= V
GS
, I
GS
= 10
V
, I
GS
= 4.5
V
, I
DS
= 5
V
, I
=
1
0A
D
= 250µA
= 10A
= 5A
–
–
–
V
D
R
Drain-Source on-Resistance
4
m
Ω
S
V
D
Forward Transconductance
Dynamic Characteri
s
tics
4
g
fs
V
D
5
Input Capacitance
Output Capacitance
–
–
–
–
1355
60
–
–
–
–
C
iss
oss
rss
V
DS
= 30
V
, V
GS
=0
V
,
C
pF
f =1
M
H
z
Re
v
e
rse Transfer Capacitance
Gate Resistance
49
C
1.2
R
G
f =1
M
H
z
Ω
Switching Characteri
s
tics
5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
–
–
–
–
–
–
–
–
–
22
4.2
6.9
6.4
15.3
25
–
–
–
–
–
–
–
–
–
Q
g
V
I
D
GS
= 10
V
, V
DD
= 30
V
,
= 10A
Q
gs
gd
nC
ns
Q
t
d
(
o
n)
t
r
V
GS
=10
V
, V
DD
= 30
V
,
Turn-off Delay Time
Fall Time
R
G
= 3
Ω
, I
D
= 10A
t
d
(
o
ff)
7.6
26
t
f
Body Diode Re
v
e
rse Reco
v
e
ry Time
t
rr
ns
I
F
=10
A
,
d
l
F
/dt=100A/
μ
s
Body Diode Re
v
e
rse Reco
v
e
ry Charge
45
Q
rr
nC
Diode Characteristics
Drain-Source Body Diode Characteri
s
tics
V
SD
Diode Forward
V
o
ltage
4
I
S
= 10
A
, V
GS
= 0V
–
–
–
–
–
1.2
30
V
A
I
S
Continuous Source Current
T
C
=25°C
Notes:
1.Repetitive rating, pulse width limited by junction temperature
T
J
(MAX)=150°C
2
.
T
he EAS data shows Max. rating . The test condition is V
DD
=25V, V
GS
=10V, L=0.4mH, IAS=14A
3
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on
the user’s specific board design.
4
.
T
he data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%.
5
.
T
his value is guaranteed by design hence it is not included in the production test.
02
N-Ch 60V Fast Switching MOSFETs
30N06
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Transfer Characteristics
Figure 3:Forward Characteristics of Reverse
Figure 4: RDS(ON) vs. VGS
1
Figure 5: RDS(ON) vs. ID
Figure 6:Normalized RDSON v.s TJ
03
N-Ch 60V Fast Switching MOSFETs
3
0
N
0
6
Typical Performance Characteristics
Figure 7: Capacitance
Figure 8:Gate Charge Characteristics
Figure 10:Safe Operating Area
Figure 9:Normalized Maximum Transient Thermal Im
p
F
e
F
d
i
a
g
n
u
c
re 10: Maximum Continuous Drain Curr
Figure 11:Normalized Maximum Transient Thermal Impedance
04
N-Ch 60V Fast Switching MOSFETs
30N06
Package Mechanical Data-TO-252
Reel Spectification-TO-252
05
