HL-30N06F
| Part # | HL-30N06F |
Download  | HL-30N06F |
N-Ch 60V Fast Switching MOSFETs
30
N
0
6
F
Green Device
Product Summary
Super Low Gate
Excellent CdV/dt effect decline
Advanced high cell density Trench
BVDSS
RDSON
ID
technology
60V
24mΩ
30A
100% EAS Guaranteed
PDFN5X6 Pin Configuration
Description
The 30N06F is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 30N06F meets the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Package Marking and Ordering Information
Device Marking
Device
Device Package
PDFN5*6
Reel Size
Tape width
Quantity
30N06
30N06
5000
Absolute Maximum Ratings
Gate-Sou
r
ce Voltage
Continuous Drain Current,
V
GS
@ 10
V
1
Continuous Drain Current,
V
GS
@ 10
V
1
V
Drain-Source
V
o
ltage
60
±
20
30
V
DS
V
V
GS
A
I
D
@T
C
=25
℃
15
A
I
D
@T
C
=100
℃
Pulsed Drain Current
2
60
A
I
DM
Single Pulse
A
v
a
lanche Energ
y
3
50
mJ
A
EAS
Av
a
lanche Current
30
I
AS
Total Power Dissipation
4
20
W
℃
℃
P
D
@T =25
℃
A
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
62
Unit
R
θ
JA
Thermal Resistance Junction-
A
m
bient
1
℃
/W
01
N-Ch 60V Fast Switching MOSFETs
30N06F
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
BV
DSS
Drain-Source Breakdown
V
o
ltage
BV
DSS
Temperature Coefficient
V
GS
=0
V
, I
D
=250uA
60
—
—
V
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
—
0.063
—
V/
℃
V
GS
=10
V
,
I
D
=15A
GS
=4.5
V
, I
=
10A
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
24
25
30
38
2.5
—
Static Drain-Source On-Resistance
2
R
DS(ON)
m
Ω
V
D
Gate Threshold
V
o
ltage
V
GS(th)
—
V
V
GS
=V
DS
, I
=250uA
D
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.24
—
m
V
/
℃
V
DS
=48
V
,
V
GS
=0
V
, T
DS
=48
V
,
V
GS
=0
V
, T
GS
=
±
20V ,
V
DS
=0V
DS
=5
V
, I
=
15A
DS
=0
V
,
V
GS
=0
V
,
f
=1MHz
J
=25
℃
1
I
DSS
Drain-Source Leakage Current
Gate-Source Leakage Current
uA
V
J
=55
℃
—
5
I
GSS
V
—
±
100
—
nA
S
Forward Transconductance
Gate Resistance
gfs
V
D
17
R
g
V
3.2
12.6
3.2
6.3
8
—
Ω
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
—
Q
gs
gd
V
DS
=48
V
,
V
GS
=4.5
V
, I
D
=12A
—
nC
ns
Q
—
T
d
(
o
n)
T
r
—
14.2
24.4
4.6
1378
86
—
V
DD
=30
V
,
V
GS
=10
V
, R
G
=3.3
Ω
,
I
D
=10A
Turn-Off Delay Time
Fall Time
T
d
(
o
ff)
—
T
f
—
Input Capacitance
Output Capacitance
Re
v
e
rse Transfer Capacitance
C
iss
—
C
oss
V
DS
=15
V
,
V
GS
=0
V
,
f
=1MHz
—
pF
C
rss
64
—
Diode Characteristics
Diode Characteristics
V
G
=V
D
=0
V
,
F
orce Current
V
GS
=0
V
,
I
S
=1
A
,
T
J
=25
℃
Continuous Source Current
1,5
Pulsed Source Current
2,5
—
—
30
A
I
S
—
—
—
—
60
A
V
I
SM
Diode Forward
V
o
ltage
2
1.2
V
SD
Notes:
1
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
.
T
he data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3
.
T
he EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,IAS=22.6A
4
.
T
he power dissipation is limited by 150℃ junction temperature
5
.
T
he data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
02
N-Ch 60V Fast Switching MOSFETs
30N06F
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: On-Resistance v.s Gate-Source
Figure 3:Forward Characteristics of Reverse
Figure 5: Normalized VGS(th) v.s TJ
Figure 4: Gate-Charge Characteristics
1.5
1
Figure 6:Normalized RDSON v.s TJ
03
N-Ch 60V Fast Switching MOSFETs
3
0
N
0
6
F
Typical Performance Characteristics
Figure 7: Capacitance
Figure 8: Safe Operating Area
1
0.1
Figure 9:Normalized Maximum Transient Thermal Im
p
F
e
F
d
i
a
g
n
u
c
re 10: Maximum Continuous Drain Curr
Figure 10:Switching Time Waveform
Figure 11:Unclamped Inductive Waveform
04
N-Ch 60V Fast Switching MOSFETs
30N06F
Package Mechanical Data-DFN5*6-8L-JQ Single
05
