HL-30P10M
| Part # | HL-30P10M |
Download  | HL-30P10M |
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
100% EAS Guaranteed
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-30V
19mΩ
-10.0A
Description
DFN2X2-6L Pin Configuration
The 30P10M
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 30P10M
meet the RoHS and Green Product
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Rating
Symbol
Parameter
Units
10s
Steady State
Drain-Source
V
o
ltage
-30
±
20
-10
-8
V
DS
V
A
Gate-Sou
r
ce Voltage
V
GS
I
D
@T
C
=25
℃
Continuous Drain Current,
V
GS
@ -10
V
1
I
D
@T
C
=100
℃
Pulsed Drain Current
2
-36
25
I
DM
Single Pulse
A
v
a
lanche Energy
3
EAS
mJ
A
I
AS
Av
a
lanche Current
-8
P
P
D
@T
C
=25
℃
=25
℃
5
Total Power Dissipation
4
W
D
@T
A
4.2
1.67
Storage Temperature Range
T
STG
-55 to 150
-55 to 150
℃
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-
A
m
bient
1
30
℃
/W
—
R
θ
JA
01
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
BV
DSS
Parameter
Drain-Source Breakdown
V
o
ltage
Test Condition
Min.
-30
Typ.
—
Max.
—
U
n
its
V
V
G
S
=0
V
, I
Reference to 25
℃
, I
1mA
G
S
=-10V , I
G
S
=-4.5
V
, I
D
=-250uA
D
=-
△
BV
DSS
/
△
T
J
BV
DSS
Temperature Coefficient
—
-0.022
—
V/
℃
m
Ω
V
D
=-15A
—
—
-1
19
25
24
35
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold
V
o
ltage
2
V
D
=-10A
V
GS(th)
—
V
V
G
S
=V
DS
, I
D
=-250uA
DS
=-24V , V
G
S
=0
V
, T
DS
=-24V , V
G
S
=0
V
, T
±
25V ,
V
DS
=0V
DS
=0
V
,
V
GS
=0
V
,
f
=1MHz
△
V
GS(th)
V
G
S
(
th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.6
—
m
V
/
℃
V
J
=25
℃
=55
℃
-1
I
DSS
Drain-Source Leakage Current
uA
V
J
—
-5
I
G
S
S
Gate-Source Leakage Current
Gate Resistance
V
GS
=
—
±
100
—
nA
V
R
g
g
13
Ω
Q
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
48
—
V
15A
DS
=-15V , V
GS
=-4.5V , I
D
=-
Q
gs
gd
9.5
8
—
nC
ns
Q
—
T
d
(
o
n)
12
—
T
r
14
—
V
R
DD
=-15V ,
V
G
S
=-10V ,
G
=3.3
Ω
, I
=-15A
D
T
d
(
o
ff)
Turn-Off Delay Time
Fall Time
190
90
—
T
f
—
C
iss
Input Capacitance
1150
155
139
—
C
oss
Output Capacitance
Re
v
e
rse Transfer Capacitance
V
DS
=-15V ,
V
G
S
=0
V
,
f
=1MHz
—
pF
C
r
s
s
—
Diode Characteristics
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-10
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
V
G
=V
D
=0
V
,
F
orce Current
I
SM
—
—
-36
A
V
SD
Diode Forward
V
o
ltage
2
V
G
S
=0
V
, I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1. 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
02
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:Normalized on Resistance vs.
Junction Temperature
Figure 10: Maximum Continuous Drain Current
vs. Case Temperature
Figure 9: Maximum Safe Operating Area
Figure 11: Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
04
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
Test Circuit
05
P-Ch 30V Fast Switching MOSFETs
3
0
P
1
0M
DFN2X2-6L Package Information
06
