HL-3400

N-Ch 30V Fast Switching MOSFETs  

60N02  

6 N02  

34

4

0

6

0

06A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

Product Summary  



Green Device Available  



Super Low Gat

e

C

harge  



Excellent CdV/dt effect decline  



Advanced high cell density Trench  

technology  

BVDSS  

RDSON  

ID  

30V  

25mΩ  

5.8A  

SOT23 Pin Configuration  

Description  

The 3400 is the high cell density trenched  

N ch MOSFETs, which provides excellent  

RDSON and efficiency for m ost of the small  

power switching and load switch applications.  

The 3400 meets the RoHS and Green  

Product requirement with full function reliability  

approved.  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Units  

Drain-Source

Voltage  

Gate-Sou

r

ce

V

oltage  

30  

V

V

V

DS  

±12  

V

GS  

Continuous

Drain Current, V

GS

@ 4.5V

1  

Continuous

Drain Current, V

GS

@ 4.5V

1  

Pulsed

Drain Current

2  

5.8  

4.0  

A

I

I

D

@T  

A

=25

℃

 

=70

℃  

A

D

@T  

A

20.4  

A

I

DM  

Total

Power Dissipation

3  

1.3  

W

℃

℃

P

D

@T

A  

=25

℃  

Storage Temperature

Range  

-55 to 150  

-55 to 150  

T

STG  

Operating

Junction Temperature Range  

T

J

Thermal Data  

Thermal Data  

Symbol  

Parameter  

Typ.  

—  

Max.  

96  

Unit  

1

R

R

θ

JA  

θ

JC  

Thermal Resistance Junction-Ambient  

℃

℃

/W  

/W  

1

Thermal Resistance Junction-Case  

—  

—  

01  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

3400  

6 N02  

4606A  

20N02  

2 N02  

Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off  

On  

Characteristic  

Drain-Source

Breakdown Voltage  

Zero

Gate Voltage Drain Current  

Gate

to Body Leakage Current  

30  

–

–

–

–

–

1

V

V

V

V

GS  

D

V

(BR)DSS  

=0V, I =250

μ

A  

μ

A  

nA  

DS  

GS  

I

DSS  

=30V, V

 

=0V,  

–

±100  

DS  

GS  

I

GSS  

=0V, V

 

= ±12V  

Characteristics  

Gate

Threshold Voltage  

0.5  

–

1.3  

V

V

DS  

GS  

D

V

GS(th)  

=V ,

 

I =250

μ

A  

V

GS  

D

–

–

–

25  

28  

36  

31  

38  

54  

=10V, I =4A  

Static

Drain-Source on-Resistance  

R

DS(on)  

m

Ω  

V

D

=3A  

2

note  

V

D

=3A  

Dynamic  

Characteristics  

Input  

C

iss  

Capacitance  

–

–

–

–

–

–

507  

52  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

Output  

V

V

DS  

GS  

C

oss  

Capacitance  

=15V, V

 

=0V, f=1.0MHz  

Reverse  

C

rss  

Transfer Capacitance  

Gate Charge  

43  

Total  

Q

g

9.1  

2.1  

2.8  

Gate-Source  

DS  

D

GS  

Q

gs  

gd  

Charge  

=15V, I =5A, V

 

=4.5V  

Gate-Drain(“Miller”)  

Q

Charge  

Switching  

Characteristics  

Turn-on

Delay Time  

Turn-on

Rise Time  

Turn-off

Delay Time  

–

–

–

–

3

–

–

–

–

ns  

ns  

ns  

ns  

t

d(on)  

2.8  

25  

4

V

DS  

t

r

=15V, R  

L

=2.8Ω  

GEN  

V

R

=3

Ω

,  

t

d(off)  

Diode Charac

teristics  

Turn-off

Fall Time  

t

f

Drain-Source  

Diode Characteristics and Maximum Ratings  

Maximum  

I

S

Continuous Drain to Source Diode Forward Current  

–

–

–

–

–

–

5

A

A

V

Maximum  

I

SM  

Pulsed Drain to Source Diode Forward Current  

20  

1.2  

Drain  

V

GS  

S

V

SD  

to Source Diode Forward Voltage  

=0V, I =5A  

Notes:  

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

02  

N-Ch 30V Fast Switching MOSFETs  

60N02  

6 N02  

4606A  

20N02  

2 N02  

Typical Electrical and Thermal Characteristics (Curves)  

Figure1: Output Characteristics  

Figure 2: Typical Transfer Characteristics  

Figure 3:On-resistance vs. Drain Current  

Figure 5: Gate Charge Characteristics  

Figure 4: Body Diode Characteristics  

Figure 6:Capacitance Characteristics  

03  

N-Ch 30V Fast Switching MOSFETs  

60N02  

6 N02  

20N02  

2 N02  

Typical Performance Characteristics  

Figure 7: Normalized Breakdown Voltage vs.  

Figure 8: Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

Figure 9: Maximum Safe Operating Area  

Fig

u

F

r

F

e

i

g

1u0

r

:e

M

1

a

0

x

:

i

M

m

aux

m

i

m

Cuo

m

n

t

C

i

n

o

u

n

o

t

i

u

n

s

u

D

o

r

u

a

s

i

n

D

r

C

au

i

n

rr

C

e

n

u

t

rr  

vs. Ambient Temperature  

Figure 11:Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

04  

N-Ch 30V Fast Switching MOSFETs  

3400  

60N02  

6 N02  

4606A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

Package Mechanical Data-SOT-23  

Symbol  

Min  

0.9  

0.3  

2.8  

—  

Typ  

1.01  

0.42  

2.92  

1.9  

Max  

1.15  

0.5  

3

Symbol  

Min  

0.01  

0.08  

1.2  

—  

Typ  

0.05  

0.13  

1.33  

0.95  

0.42  

0.2  

Max  

0.1  

0.15  

1.4  

—  

A

A

1  

b

p  

c

D

e

E

e

1

—  

H

E

L

p  

2.25  

0.45  

—  

2.4  

2.55  

0.55  

—  

0.3  

—  

0.5  

—  

Q

w

v

0.49  

0.1  

05