HL-3401
| Part # | HL-3401 |
Download  | HL-3401 |
P-Ch 30V Fast Switching MOSFETs
3
4
01
Product Summery
Features
Green Device Available
Super Low Gate Charge
-30V
48m
Ω
-4A
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Description
SOT23 Pin Configuration
THE 3401 is the high cell density trenched
P-ch MOSFETs, which provide excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The 3401 meet the RoHS and Green Product
requireme n t with full function reliability approved.
Absolute Maximum Ratings
Sy
m
bol
Para
m
eter
Value
U
n
its
V
V
DS
D
r
ain-to-Source Voltage
Gate-to-Source Voltage
-30
±12
V
V
GS
T
A
= 25°C
-4
I
D
Continuous Drain Current
T
A
= 100°C
-3
A
A
P
u
lsed Drain Current
(1)
P
o
w er Dissipation
I
DM
-16
P
D
T
A
= 25°C
1.2
W
Ther
m
a
l Resistance, Junction to A
m
b
ient
(2)
Junction & Storage Te
m
p
erature Range
R
θ
JA
108
°C/W
°C
-55 to 150
T
J
, T
STG
01
P-Ch 30V Fast Switching MOSFETs
3401
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Sy
m
bol
Para
m
eter
Conditions
Min.
Typ.
Max.
U
n
it
D
r
ain-Source Breakdow n Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
-30
–
–
–
–
1
V
V
(
B
R)DSS
I
D
= -250
µ
A, V
GS
= 0V
–
–
I
DSS
V
DS
= -30V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±12V
µ
A
±100
I
G
S
S
nA
On Characteristics
Gate Threshold Voltage
-0.6
-0.95
48
-1.3
62
V
V
G
S
(
th)
V
DS
= V
G
S
,
I
D
= -250
µ
A
V
GS
= -10V,
I
D
= -4A
V
GS
= -4.5V,
I
D
= -3A
V
GS
= -2.5V,
I
D
= -3A
–
–
–
m
Ω
m
Ω
m
Ω
Static Drain-Source ON-Resistance
(3)
56
73
R
DS(ON)
75
98
Dynamic Characteristics
Input Capacitance
–
–
–
–
–
–
553
57
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
iss
oss
r
s
s
Output Capacitance
C
V
GS
= 0V, V
DS
= -15V,f = 1
M
Hz
Re
v
erse
T
r
ansfer
C
apacitance
Total Gate Charge
35
C
6.5
1.4
1.7
Q
g
Gate Source Charge
Gate Drain(“Miller”) Charge
Q
gs
V
GS
= 0 to -4.5V V
DS
= -15V,
I
D
= -3A
Q
gd
Switching Characteristics
Turn-On DelayTime
Turn-On Rise Time
Turn-O
f
f
D
elayTime
Turn-O
f
f
F
all Time
–
–
–
–
10
86
–
–
–
–
ns
ns
ns
ns
t
d(on)
t
r
V
GS
= -4.5V, V
DD
= -15V I = -3A
R
G
E
N
= 3
Ω
,
D
150
357
t
d(off)
t
f
Drain-Source Diode Characteristics and Max Ratings
–
–
–
–
–
–
–
-4
-16
-1.2
–
A
A
I
S
M
a
xi
m
u
m
C
ontinuous Drain to Source Diode Forw ard Current
I
SM
M
a
xi
m
u
m
P
u
lsed Drain to Source Diode Forw ard Current
D
r
ain to Source Diode Forw ard Voltage
Body Diode Reverse Recovery Ti
m
e
Body Diode Reverse Recovery Charge
–
V
V
SD
V
GS
= 0V,
I
S
= -4A
36
5
ns
nC
trr
Qrr
I
F
= -3A, di/dt = 80A/us
–
Note :
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. RθJA is measured with the device mounted on a 1inch2 pad of 2oz copper FR4 PCB
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%.
02
P-Ch 30V Fast Switching MOSFETs
3401
P-Channel Typical
Performance Characteristics
Figure1:Typical Output Characteristics
Figure 2:Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
Figure 5: Gate Charge Characteristics
03
P-Ch 30V Fast Switching MOSFETs
3401
P-Channel Typical
Performance Characteristics
Figure7:Normalized Breakdown voltage vs. Junction T
e
F
m
i
g
p
u
e
r
r
e
a
8
t
:
u
N
r
e
ormalized on Resistance vs. Junctio
Figure9:Maximum Safe Operating Area
Figure10:Maximum Continuous Drian Current
vs. Ambient Temperature
Figure11:Normalized Maximum Transient Thermal Imp
F
e
i
d
g
a
u
n
r
e
c
e
1
1: Peak Current Capacity
04
P-Ch 30V Fast Switching MOSFETs
3401
N
T
–
e
C
s
h
t
a
C
n
i
r
n
c
e
ul
i
t
T
ypical Performance Characteristics
05
P-Ch 30V Fast Switching MOSFETs
3401
N
P
–
a
C
c
h
k
a
a
n
g
n
e
e
M
l
e
T
c
y
h
p
a
i
n
c
i
a
c
l
a
P
l
D
e
a
r
f
t
o
a
r
–
m
S
O
a
T
n
–
c
2e
3
C
haracteristics
06
