HL-3401A
| Part # | HL-3401A |
Download  | HL-3401A |
P-Ch 30V Fast Switching MOSFETs
3
4
0
1A
Product Summery
Features
Green Device Available
Super Low Gate Charge
-30V
42m
Ω
-4.5A
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Description
SOT 23 Pin Configurations
THE 3401A is the high cell density trenched
P-ch MOSFETs, which provide excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The 3401A meet the RoHS and Green Product
requireme n t with full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
Drain-Source
V
o
ltage
Gate-Sou
r
ce Voltage
Continuous Drain Current
Continuous Drain Current
V
V
V
DS
±
12
-4.5
V
GS
A
I
D
@T
A
=25
℃
-3.6
A
I
D
@T
A
=70
℃
Pulsed Drain Current
2
-16
A
I
DM
Total Power Dissipation
Total Power Dissipation
3
3
1.4
W
W
℃
℃
P
P
D
D
@T
A
=25
℃
0.9
A
@T =70
℃
Storage Temperature Range
-55 to 150
T
STG
Operating Junction Temperature Range
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
105
—
Unit
℃
/W
℃
/W
Thermal Resistance Junction-
A
m
bient
1
—
—
R
R
θ
JA
θ
JA
Thermal Resistance Junction-
A
m
bient
(t
≤
10s)
1
01
P-Ch 30V Fast Switching MOSFETs
3401A
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Te
s
t Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
V
o
ltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Threshold
V
o
ltage
V
GS
= 0
V
, I
DS
= -30
V
, V
GS
= 0V
DS
= 0
V
, V
GS
= ±12V
DS
= V
GS
, I
= -250µA
GS
= -10
V
, I
= -4.2A
GS
= -4.5V, I
GS
= -2.5V, I
D
= -250µA
-30
V
μ
A
nA
V
V
(BR)DSS
–
–
–
V
–
–
I
DSS
GSS
GS(th)
-1
V
l
–
±100
-1.3
60
V
D
-0.7
V
-1
42
V
D
V
D
= -4A
= -1A
–
–
R
DS(on)
Drain-Source on-Resistance
3
52
60
75
90
m
Ω
V
D
Input Capacitance
Output Capacitance
C
iss
oss
rss
–
–
–
745
70
–
–
–
C
V
DS
= -15
V
, V
GS
=0
V
, f =1MHz
pF
Re
v
e
rse Transfer Capacitance
C
57
4
Total Gate Charge
Gate
−
Source Charge
Gate
−
Drain Charge
Turn-on Delay Time
Rise Time
Q
g
–
–
–
–
–
–
–
8
1.8
2.7
7
–
–
–
–
–
–
–
V
GS
= -4.5V, V
DS
= -15
V
,
= -4.2A
Q
gs
gd
d(on)
nC
ns
I
D
Q
t
t
r
3
V
GS
= -10
V
, V
DD
= -15
V
, I
= –
D
Turn-off Delay Time
Fall Time
4.2
A
,
R
GEN
= 6
Ω
t
d(off)
30
12
t
f
Diode Forward
V
o
ltage
3
I
S
= -4.2A, V
GS
= 0V
–
–
–
–
-1.2
-4.2
V
A
V
SD
Continuous Source Current
I
S
Note :
1.Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C
2
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application
depends on the user’s specific board design.
3.Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4.
.
T
his value is guaranteed by design hence it is not included in the production test.
02
P-Ch 30V Fast Switching MOSFETs
3401A
P-Channel Typical
Performance Characteristics
Figure1:Typical Output Characteristics
Figure 2:Transfer Characteristics
Figure 3:Forward Characteristics of Reverse
Figure 4: RDS(ON) vs. VGS
Figure 5: RDS(ON) vs. ID
Figure 6: Normalized RDS(on) vs. Temperature
03
P-Ch 30V Fast Switching MOSFETs
3401A
P-Channel Typical
Performance Characteristics
Figure7:Capacitance
Figure 8: Safe Operating Area
Figure9:Normalized Maximum Transient Thermal Impedance
Figure10:Switching Time Waveform
Figure 11: Gate Charge Waveform
04
P-Ch 30V Fast Switching MOSFETs
3401A
N
P
–
a
C
c
h
k
a
a
n
g
n
e
e
M
l
e
T
c
y
h
p
a
i
n
c
i
a
c
l
a
P
l
D
e
a
r
f
t
o
a
r
–
m
S
O
a
T
n
–
c
2e
3
C
haracteristics
05
