HL-3415
| Part # | HL-3415 |
Download  | HL-3415 |
P-CH 20V Fast Switching MOSFETs
3
4
1
5
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-20V
30mΩ
-4.1A
Description
SOT23 Pin Configuration
The 3415
is the high cell density trenched
p-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 3415 meet the RoHS and Green Product
requirement with
full function
reliability approved.
Absolute Maximum Ratings
V
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
-4.1
-2.6
-16
1
V
V
T
C
= 25
℃
A
A
A
W
I
D
Continuous Drain Current
T
C
= 100
℃
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T
C
= 25
℃
R
θ
JC
125
℃
/W
℃
T
J
, T
STG
-55 to +175
01
P-CH 20V Fast Switching MOSFETs
3415
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristic
—
—
Source Breakdown Voltage
V
V
GS
=0V , I
D
=-250uA
V
(BR)DSS
Drain
-20
V
I
DSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
DS
= -20V V
GS
= 0V
—
—
—
-1.0
±100
μA
nA
I
GSS
—
V
DS
=0V, V
GS
= ±12V
On Characteristics
V
GS(th)
-0.7
30
Gate Threshold Voltage
-0.4
—
-1.0
38
V
V
DS
=V
GS
, I
D
=250μA
V
GS
=-4.5V, I
D
=-4.1A
V
GS
=-2.5V, I
D
=-3A
Static Drain-Source on-Resistance
mΩ
Dynamic Chara
n
c
o
t
t
e
e
2
ristics
R
DS(on)
—
38
53
C
iss
C
oss
C
rss
Q
g
Input Capacitance
—
830
132
85
—
Output Capacitanc
e
–
V
DS
=-10V, V
GS
=0V, f=1.0MHz
V
DS
=-10V, I
D
=-2A, V
GS
=-4.5V
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
—
—
—
—
—
—
—
—
8.8
1.4
1.9
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Switching Characteristics
10
t
d(on)
t
r
Turn-on Delay Time
—
—
V
DS
=-10V,I
D
=-3.3A,R
GEN
=1Ω,
V
GS
=-4.5V
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
32
50
51
ns
t
d(off)
—
—
—
—
t
f
Drain-Source Diode Characteristics and Maximum Ratings
-4.1
-16
I
S
—
—
—
—
—
—
Maximum Continuous Drain to Source Diode Forward Current
A
A
V
I
SM
V
SD
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
V
GS
=0V, I
S
=-4.1A
-1.2
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2.Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
02
P-Ch 20V Fast Switching MOSFETs
3415
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
P-CH 20V Fast Switching MOSFETs
3415
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs. Junction
T
F
e
i
m
g
u
p
r
er
8
a
:
t
u
N
r
o
e
r
malized on Resistance vs. Junctio
Figure 9: Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
04
P-CH 20V Fast Switching MOSFETs
3415
Package Mechanical Data-SOT-23
DIMENSIONS
DIMENSIONS ( unit : mm )
Symbol
A
Min
0.9
0.3
2.8
T
y
p
1.01
0.42
2.92
1.9
Max
1.15
0.5
3
Symbol
Min
0.01
0.08
1.2
—
T
y
p
0.05
0.13
1.33
0.95
0.42
0.2
Max
0.1
0.15
1.4
—
A
1
b
p
c
D
e
E
—
—
—
e
1
H
E
2.25
0.45
2.4
2.55
0.55
—
L
p
0.3
—
0.5
—
Q
w
0.49
0.1
v
05
