HL-3416
| Part # | HL-3416 |
Download  | HL-3416 |
N-Ch 20V Fast Switching MOSFETs
3
4
16
Product Summary
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
20V
RDSON
17m
Ω
ID
6A
Description
SOT23 Pin Configuration
The 3416
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
efficiency for most
of the
small power swtiching
and load swtich
applications.
The 3416
meet the RoHS and Green Product
requirement with
full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Voltage
r
ce
V
oltage
2 0
V
V
DS
±10
GS
Drain Current, V
GS
@ 4.5V
1
Drain Current, V
GS
@ 4.5V
1
6
3.3
A
D
@T
A
=25
℃
=70
℃
A
D
@T
A
2
Drain Current
20.4
A
DM
3
Power Dissipation
0.9
W
℃
℃
D
@T
A
=25
℃
Range
-55 to 150
-55 to 150
STG
Junction Temperature Range
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
R
θ
JA
θ
JC
Thermal Resistance Junction-Ambien
t
1
Thermal Resistance Junction-Case
1
—
—
139
℃
℃
/W
/W
—
01
N-Ch 20V Fast Switching MOSFETs
3
4
16
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
20
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
μ
A
uA
I
I
V
DS
=20V, V
GS
=0V,
–
–
V
DS
=0V, V
GS
= ±10V
±10
On Characteristics
0.4
0.7
17
26
1
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=4.5V, I
GS
=2.5V, I
D
=250
μ
A
V
22
36
D
=5A
=3A
–
–
Static Drain-Source on-Resistance
R
DS(on)
m
Ω
note2
D
Dynamic Characteristics
Input Capacitance
545
103
90
8
C
iss
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=10V, V
GS
=0V,
C
oss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
f=1.0MHz
C
rss
Q
Q
Q
g
2.5
3
gs
V
DS
=10V, I =5A, V
GS
=4.5V
D
gd
Switching Characteristics
0.5
1
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
DS
=10V,R
L
=1.5
Ω
,
12
4
t
d(o
f
f)
R
GEN
=3
Ω
, V
GS
=5V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
5
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
A
A
V
20
1.2
I
SM
V
SD
Drain to Source Diode Forward Voltage
V
GS
=0V, I =5A
S
Note :
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 20V Fast Switching MOSFETs
3
4
16
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5:
Gate Charge Characteristics
Figure 4:Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
N-Ch 20V Fast Switching MOSFETs
3416
Typical Performance Characteristics
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Figure 7:Normalized Breakdown Voltage vs.
Junction Temperature
Figure.9: Maximum Safe Operating Area
Figure.10: Maximum Continuous Drain Current
vs. Ambient Temperature
Figure.11: Maximum Effective Transient Thermal
Impedance, Junction-to-Ambient
04
N-Ch 20V Fast Switching MOSFETs
3
4
16
SOT23 Mechanical tData
DIMENSIONS
DIMENSIONS ( unit : mm )
Symbol
A
Min
0.9
0.3
2.8
—
T
y
p
1.01
0.42
2.92
1.9
Max
1.15
0.5
3
Symbol
Min
0.01
0.08
1.2
—
T
y
p
0.05
0.13
1.33
0.95
0.42
0.2
Max
0.1
0.15
1.4
—
A
1
b
p
c
D
e
E
—
e
1
H
E
2.25
0.45
—
2.4
2.55
0.55
—
L
p
0.3
—
0.5
—
Q
w
0.49
0.1
v
05
