HL-3419
| Part # | HL-3419 |
Download  | HL-3419 |
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-30V
16mΩ
-32A
100% EAS Guaranteed
Description
PDFN 3*3 Pin Configuration
The 3419
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 3419
meet the RoHS and Green Product
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Rating
Symbol
Parameter
Units
10s
Steady State
V
DS
Drain-Source
V
o
ltage
-30
±
20
-32
V
V
Gate-Sou
r
ce Voltage
V
GS
Continuous Drain Current,
V
GS
@ -10
V
1
Continuous Drain Current,
V
GS
@ -10
V
1
I
D
@T
C
=25
℃
A
I
D
@T
C
=100
℃
-20
A
I
DM
Pulsed Drain Current
2
-65
A
EAS
Single Pulse
A
v
a
lanche Energy
3
72.2
mJ
A
I
AS
Av
a
lanche Current
-38
P
D
@T
C
=25
℃
Total Power Dissipation
4
29
W
℃
℃
T
STG
Storage Temperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-
A
m
bient
1
Typ.
Max.
75
Unit
—
℃
/W
R
θ
JA
01
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Conditions
Min.
-30
—
—
—
-1
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown
V
o
ltage
BV
DSS
Temperature Coefficient
V
GS
=0
V
, I
D
=-250uA
BV
DSS
T
J
Reference to 25
℃
, I
GS
=-10V , I
=-15A
GS
=-4.5
V
, I
=
-10A
D
=-1mA
-0.022
16
—
V/
℃
V
D
20
32
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold
V
o
ltage
2
m
Ω
V
D
22
V
GS(th)
—
V
V
GS
=V
DS
, I
=-250uA
D
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.6
—
m
V
/
℃
V
DS
=-24V ,
V
GS
=0
V
,
T
J
=25
℃
-1
I
DSS
Drain-Source Leakage Current
uA
V
DS
=-24V ,
V
GS
=0
V
,
T
J
=55
℃
—
-5
I
GSS
Gate-Source Leakage Current
Gate Resistance
V
GS
±
25
V
,
V
DS
=0V
DS
=0
V
,
V
GS
=0V , f=1MHz
—
±
100
—
nA
R
g
V
13
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
52
—
Q
gs
gd
V
DS
=-15V ,
V
GS
=-4.5V , I
D
=-15A
9.8
8.3
13
—
nC
ns
Q
—
T
d
(
o
n)
—
T
r
15
—
V
DD
=-15
V
,
V
GS
=-10V , R
G
=3.3
Ω
,
I
D
=-15A
T
d
(
o
ff)
Turn-Off Delay Time
Fall Time
198
98
—
T
f
—
C
iss
oss
rss
Input Capacitance
1150
150
134
—
C
C
Output Capacitance
Re
v
e
rse Transfer Capacitance
V
DS
=-15V , V
GS
=0
V
,
f
=1MHz
—
pF
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-32
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
V
G
=V
D
=0
V
,
F
orce Current
I
SM
—
—
-65
A
V
SD
Diode Forward
V
o
ltage
2
V
GS
=0
V
, I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
02
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: On-Resistance v.s Gate-Source
Figure 3:Forward Characteristics of Reverse
Figure 5: Normalized VGS(th) vs. TJ
Figure 4: Gate-Charge Characteristics
Figure 6: Normalized RDSON vs. TJ
03
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
Typical Performance Characteristics
Figure 7: Capacitance
Figure 8:Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
Figure 11: Unclamped Inductive Switching Wav
Figure 10: Switching Time Waveform
04
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
Package Mechanical Data-SOP-8
Test Circuit
Package Mechanical Data-SOP-8
05
P-Ch 30V Fast Switching MOSFETs
3
4
1
9
PDFN3*3-8L Package Information
MILLMETER
Symbol
MIN
MON
0.80
MAX
A
A1
b
0.70
0.00
0.24
0.10
3.25
3.05
2.40
3.00
1.35
0.90
0.05
0.35
0.20
3.40
3.25
2.60
3.20
1.55
0.03
0.30
c
0.15
D
3.32
D1
D2
E
3.15
2.50
3.10
E1
e
1.45
0.65BSC.
3.30
H
3.20
0.30
0.10
3.40
0.50
0.20
L
0.40
L1
L2
0.15
1.13REF.
06
