HL-40N05
| Part # | HL-40N05 |
Download  | HL-40N05 |
N-Ch 40V Fast Switching MOSFETs
40
N
0
5
Product Summary
Super Low Gate Charge
Green Device Available
Excellent CdV/dt effect decline
BVDSS
RDSON
ID
100% EAS Guaranteed
40V
19mΩ
7A
Advanced Trench MOS Technology
SOT-23-3L
Description
ption
The 40N05 is the high cell density trenched
N ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
The 40N05 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
Drain-Source
V
o
ltage
40
V
DS
Gate-Sou
r
ce Voltage
Continuous Drain Current,
V
GS
@ 10
V
1
Continuous Drain Current,
V
GS
@ 10
V
1
±
20
V
V
GS
7
A
I
D
@T
C
=25
℃
4
A
I
D
@T
C
=100
℃
Pulsed Drain Current
2
32.8
A
I
DM
Single Pulse
A
v
a
lanche Energy
3
13
2
mJ
A
EAS
Av
a
lanche Current
I
AS
Total Power Dissipation
4
73
W
℃
℃
P
D
@T =25
℃
C
Storage Temperature Range
-55 to 150
-55 to 150
T
STG
Operating Junction Temperature Range
T
J
01
N-Ch 40V Fast Switching MOSFETs
40N05
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
40
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
DS
=40V, V
GS
=0V
DS
=0V, V
GS
=±20V
I
–
μ
A
nA
I
V
–
±100
On Characteristics
1
–
–
1.5
19
25
2.5
24
35
V
GS(th)
Gate Threshold Voltage
Static Drain-Source on-
Resistance
note3
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
m
Ω
m
Ω
D
=8A
=5A
R
DS(on)
D
Dynamic Characteristics
633
67
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
oss
V
DS
=20V, V
GS
=0V, f=1.0MHz
58
C
rss
12
Q
Q
Q
g
3.2
3.1
gs
gd
V
DS
=20V, I =8A, V
GS
=10V
D
Switching Characteristics
4
3
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
DD
= 20V, R
L
=2.5
Ω
15
2
t
d(o
f
f)
V
GS
=10V,R
REN
=3
Ω
t
f
Drain-Source Diode Characteristics and Maximum Ratings
7
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
–
–
–
–
A
A
32
I
SM
1.2
V
SD
V
GS
=0V, I
S
= 8A
–
–
V
Voltage
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : T
J
=25℃,V
DD
=20V,V
G
=10V,L=0.5mH,Rg=25Ω,IAS=7.2A
T
J
=25℃,V
DD
=-20V,V
G
= -10V,L=0.5mH,Rg=25Ω,IAS=-8.4A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
02
N-Ch 40V Fast Switching MOSFETs
40N05
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6:Capacitance Characteristics
03
N-Ch 40V Fast Switching MOSFETs
4
0
N
0
5
Typical Performance Characteristics
Figure 7:Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
Cuo
m
n
t
C
i
n
o
u
n
o
t
i
u
n
s
u
D
o
r
u
a
s
i
n
D
r
C
au
i
n
rr
C
e
n
u
t
rr
vs. Ambient Temperature
Figure 9:Maximum Safe Operating Areaedance
Figure 11:Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
04
N-Ch 40V Fast Switching MOSFETs
40N05
Package Mechanical Data-SOT-23-3L
05
