HL-40N06D
| Part # | HL-40N06D |
Download  | HL-40N06D |
N-Ch 60V Fast Switching MOSFETs
40
N
0
6
D
Green Device
Product Summary
Super Low Gate
Excellent CdV/dt effect decline
Advanced high cell density Trench
BVDSS
RDSON
ID
technology
60V
12mΩ
40A
100% EAS Guaranteed
PDFN3* 3 Pin Configuration
Description
The 40N06D is the high cell density trenched
N-ch MOSFETs, which provides excellent
RDSON and and gate charge for most of the
synchronous buck converter applications.
The 40N06D meets the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
Absolute Maximum Ratings
60
±20
40
V
V
A
A
V
DSS
GSS
Drain-Source Voltage
Gate-Source Voltage
V
T
T
C
C
= 25
℃
= 100
℃
I
D
Continuous Drain Current
23
I
DM
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
100
48
37.7
1.6
A
mJ
W
℃
/W
℃
EAS
P
R
, T
STG
D
T
C
= 25
℃
θ
JC
T
J
-55 to +175
01
N-Ch 60V Fast Switching MOSFETs
40N06D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
60
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
μ
A
nA
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
DS
=60V, V
GS
=0V,
DS
=0V, V
GS
= ±20V
–
–
±100
On Characteristics
1
–
–
1.6
12
16
2.5
17
25
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
D
=30A
=20A
Static Drain-Source on-Resistance
note3
R
DS(on)
m
Ω
D
Dynamic Characteristics
2900
140
120
50
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
C
oss
f=1.0MHz
C
rss
Q
Q
Q
g
V
DS
=30V, I
D
=30A,
6
gs
gd
V
GS
=10V
15
Switching Characteristics
7.4
5.1
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
R
DS
=30V, I
D
=30A,
28.2
5.5
t
d(o
f
f)
G
=1.8
Ω
, V
GS
=10V
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
40
100
1.2
–
I
S
–
–
–
–
–
–
–
–
A
A
V
ns
nC
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
o
ltage
V
SD
V
GS
=0V, I
S
=30A
Body Diode Re
v
e
rse Reco
v
e
ry Time
28
trr
Qrr
racteristics
I
F
=30A, dI/dt=100A/
μ
s
Body Diode Re
v
e
rse Reco
v
e
ry Charge
40
–
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : T
J
=25℃,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,IAS=16A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
N-Ch 60V Fast Switching MOSFETs
40N06D
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
0
Figure 6:Capacitance Characteristics
03
N-Ch 60V Fast Switching MOSFETs
4
0
N
0
6
D
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Figure 8: Normalized on Resistance vs.
Junction Temperature
Junction Temperature
0.01
Figure 9:Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure 11:Maximum Continuous Drain Current vs.
Ambient Temperature
Figure 10:Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
04
N-Ch 60V Fast Switching MOSFETs
40N06D
Package Mechanical Data-TO-252-4R
Reel Spectification-TO-252-4R
04
