HL-4410

N-Ch 30V Fast Switching MOSFETs  

60N02  

6 N02  

4410  

6 6A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  



Green Device Available  



Super Low Gat

e

C

harge  



Excellent CdV/dt effect decline  



Advanced high cell density Trench  

technology  

Product Summary  

BVDSS  

RDSON  

ID  

30V  

7mΩ  

18A  



100% EAS Guaranteed  

Description  

SOP8 Pin Configuration  

The 4410

 

is the high cell density trenched

 

N-ch  

MOSFETs, which provide excellent RDSON and  

gate charge for most of the synchronous buck  

converter applications.  

The 4410

 

meet the RoHS and Green Product,  

requirement 100%

 

EAS guaranteed with  

full function reliability approved.  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

30  

Units  

V

Drain-Source

Voltage  

Gate-Sou

r

ce

V

oltage  

V

DS  

V

GS  

±20  

V

Continuous

Drain Current, V

GS

@ 10V

1  

Continuous

Drain Current, V

GS

@ 10V

1  

I

I

D

@T

A  

=25

℃

 

=70

℃  

18  

10  

A

D

@T

A  

A

Pulsed

Drain Current  

2

I

DM  

60  

A

Single

Pulse Avalanche Energy

3  

EAS  

40  

35  

mJ  

A

Avalanche

Current  

I

AS  

Total

Power Dissipation

4  

P

D

@T  

A

=25

℃  

5

W

℃

℃

Storage

Temperature Range  

Operating

Junction Temperature Range  

T

STG  

-55 to 150  

-55 to 150  

T

J

Thermal Data  

Symbol  

Parameter  

Typ.  

—  

Max.  

41  

Unit  

1

R

R

θ

JA  

θ

JC  

Thermal Resistance Junction-Ambient  

℃

/W  

/W  

1

Thermal Resistance Junction-Case  

—  

10  

℃

01  

N-Ch 30V Fast Switching MOSFETs  

60N02  

6 N02  

4410  

6 6A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Units  

Off

Characteristic  

30  

–

–

–

–

–

1

V

Drain-Source

Breakdown Voltage  

Zero

Gate Voltage Drain Current  

Gate

to Body Leakage Current  

V

D

=250

μ

A  

V

GS

=0V, I  

V

(BR)DSS  

μ

A  

nA  

V

D

D

S

S

=

=

0

3

0

V

V

,

V

,

V

G

S

G

S

=

=

±

2

0

V

0

V

,  

I

DSS  

–

±100  

I

GSS  

On

Characteristics  

1

–

1.5  

7

2.5  

9

V

Gate

Threshold Voltage  

V

D

=250

μ

A  

V

GS(th)  

V

D

=15A  

Static

Drain-Source on-Resistance  

R

DS(on)  

m

Ω  

3

–

11  

14  

V

V

D

=10A  

note  

Dynamic

Characteristics  

–

–

–

–

–

–

1116  

187  

152  

13.3  

3.1  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

Input

Capacitance  

C

iss  

Output

Capacitance  

C

oss  

rss  

Reverse

Transfer Capacitance  

C

Total

Gate Charge  

Q

g

V

DS

=15V, I  

D

=8A, V

GS

=10V  

Gate-Source

Charge  

Q

Q

gs  

5

Gate-Drain(“Miller”)

Charge  

gd  

Switching

Characteristics  

–

–

–

–

15  

19  

35  

21  

–

–

–

–

ns  

ns  

ns  

ns  

Turn-on

Delay Time  

Turn-on

Rise Time  

Turn-off

Delay Time  

Turn-off

Fall Time  

t

d(on)  

t

r

V

DS

=15V, I  

D

=15A, V

GS

=10V, R

REN

=3

Ω  

t

d(o

f

f)  

t

f

–

–

–

–

15  

60  

A

A

I

S

Maximum

Continuous Drain to Source Diode Forward Current  

I

SM  

Maximum

Pulsed Drain to Source Diode Forward Current  

–

–

1.2  

V

Drain

to Source Diode Forward Voltage  

V

S

V

SD  

–

–

14  

–

–

ns  

Body

Diode Reverse Recovery Time  

Body Diode Reverse Recovery Time Charge  

trr  

I

F

=5A, dI/dt=100A/

μ

s  

4.1  

nC  

Qrr  

Note :  

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. EAS condition:

T

J

=25℃, V

GS

=15V, R

G

=25Ω, L=0.5mH, I

AS

=12.6A  

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

02  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

4410  

6 6A  

20N02  

2 N02  

Typical Performance Characteristics  

Figure1: Output Characteristics  

Figure 2: Typical Transfer Characteristics  

Figure 3:On-resistance vs. Drain Current  

Figure 5: Gate Charge Characteristics  

Figure 4: Body Diode Characteristics  

Figure 6: Capacitance Characteristics  

03  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

4410  

6 6A  

20N02  

2 N02  

Typical Performance Characteristics  

Figure 7: Normalized Breakdown Voltage vs. Junction

T

F

e

i

m

g

u

p

r

er

8

a

:

t

u

N

r

o

e

r

malized on Resistance vs. Junctio  

Figure 9: Maximum Safe Operating Area  

FFigure 10: Maximum Continuous Drain Curr  

Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

04  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

4410  

6 6A  

20N02  

2 N02  

SOP-8 Package Information  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

1.35  

0.1  

Max.  

1.75  

0.25  

1.55  

0.51  

0.25  

5.1  

Min.  

0.053  

0.004  

0.053  

0.013  

0.006  

0.185  

0.15  

Max.  

0.069  

0.01  

A

A1  

A2  

b

1.35  

0.33  

0.17  

4.7  

0.061  

0.02  

c

0.01  

D

0.2  

E

3.8  

4

0.157  

E1  

5.8  

6.2  

0.228  

0.244  

e

1.270(BSC)  

0.050(BSC)  

L

0.4  

0°  

1.27  

8°  

0.016  

0°  

0.05  

8°  

θ

05