HL-4882
| Part # | HL-4882 |
Download  | HL-4882 |
Dual N-Ch 40V Fast Switching MOSFETs
4882
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
40V
17mΩ
8A
100% EAS Guaranteed
Description
SOP8 Pin Configuration
The 4882
is the high cell density trenched
N-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 4882
meet the RoHS and Green Product,
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings
40
Drain-Source
v
o
ltage
Gate-Source voltage
V
DS
V
V
V
GS
±20
T =25°C
A
8
6
I
D
Continuous Drain Current
A
T
A
=100°C
Pulsed Drain Current
1
I
DM
32.8
13
A
mJ
W
Single Pulse
A
v
a
lanche Energy
2
EAS
Total Power Dissipation
T
A
=25°C
P
D
2.9
Thermal Resistance, Junction to
A
m
bient
R
θ
JA
STG
63
℃
/W
°C
Operating Junction and Storage Temperature Range
-55 to 150
T
J
,
T
01
Dual N-Ch 40V Fast Switching MOSFETs
4882
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Off Characteristic
40
V
(BR)DSS
DSS
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
–
–
–
–
1
V
μ
A
nA
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
DS
=40V, V
GS
=0V
DS
=0V, V
GS
=±20V
–
–
±100
On Characteristics
1
–
–
1.5
17
25
2.5
22
35
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
=10V, I
GS
=4.5V, I
D
=250
μ
A
V
m
Ω
m
Ω
D
=8A
=5A
Static Drain-Source on-Resistance
note3
R
DS(on)
D
Dynamic Characteristics
633
67
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
C
oss
V
DS
=20V, V
GS
=0V, f=1.0MHz
58
C
rss
12
Q
Q
Q
g
3.2
3.1
gs
gd
V
DS
=20V, I =8A, V
GS
=10V
D
Switching Characteristics
4
3
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
t
r
V
DD
= 20V, R
L
=2.5
Ω
15
2
t
d(o
f
f)
V
GS
=10V,R
REN
=3
Ω
t
f
Drain-Source Diode Characteristics and Maximum Ratings
M
a
x
i
mum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
8
I
S
–
–
–
–
A
A
32
I
SM
1.2
V
SD
V
GS
=0V, I
S
= 8A
–
–
V
Voltage
Diode Characteristics
Symbol
Parameter
Conditions
=0
V
,
F
orce Current
G
S
=0
V
, I
=
1
A
, T
=
25
℃
Min.
—
Typ.
—
Max.
Unit
A
Continuous Source Current
1,5
Pulsed Source Current
2,5
I
S
V
G
=V
D
—
—
A
I
SM
Diode Forward
V
o
ltage
2
V
S
J
—
—
V
V
SD
Note :
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. EAS condition : T
J
=25℃,V
DD
=20V,V
G
=10V,L=0.5mH,Rg=25Ω,IAS=7.2A
T
J
=25℃,V
DD
=-20V,V
G
= -10V,L=0.5mH,Rg=25Ω,IAS=-8.4A
3.Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
02
Dual N-Ch 40V Fast Switching MOSFETs
4882
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
Dual N-Ch 40V Fast Switching MOSFETs
4882
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs. Junction
T
F
e
i
m
g
u
p
r
er
8
a
:
t
u
N
r
o
e
r
malized on Resistance vs. Junctio
Figure 9: Maximum Safe Operating Area
FFigure 10: Maximum Continuous Drain Curr
Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
04
Dual N-Ch 40V Fast Switching MOSFETs
4882
SOP-8 Package Information
05
