HL-50P03D
| Part # | HL-50P03D |
Download  | HL-50P03D |
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-30V
8.7mΩ
-50A
100% EAS Guaranteed
Description
PDFN3*3 Pin Configuration
The 50P03D
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 50P03D
meet the RoHS and Green Product
requirement 100%
EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol
Parameter
10s
Steady
State
Units
Drain-Source
V
o
ltage
-30
DS
Gate-Sou
r
ce Voltage
±25
GS
Continuous
Drain Current,
V
GS
@ 10
V
1
Continuous
Drain Current,
V
GS
@ 10
V
1
-50
-32
I
D
@T
C
=25
℃
A
A
I
D
@T
C
=100
℃
Pulsed
Drain Current
2
-150
125
-50
DM
Single
Pulse
A
v
a
lanche Energy
3
Avalanche
Current
Total
Power Dissipation
4
Storage
Temperature Range
@T
AS
5
2
D
A
=25
℃
-55 to 175
-55 to 175
STG
Operating
Junction Temperature Range
T
J
℃
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-
A
m
bient
1
Typ.
Max.
Unit
℃
/W
—
62
R
θ
JA
01
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
U
n
its
Off Characteristic
-30
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
GS
=0V, I = -250
μ
A
D
–
–
–
–
V
-1
I
DSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
DS
= -30V, V
GS
=0V,
DS
=0V, V
GS
= ±20V
–
–
μ
A
nA
I
GSS
±100
On Characteristics
-1
–
-1.6
9.5
17
-2.5
14
V
GS(th)
Gate Threshold Voltage
V
V
V
DS
=V
GS
, I
GS
= -10V, I
GS
= -4.5V, I
D
= -250
μ
A
= -10A
= -5A
V
D
Static Drain-Source on-Resistance
R
DS(on)
m
Ω
Note3
24
D
–
Dynamic Characteristics
1770
233
206
22
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= -15V, V
GS
=0V,
C
oss
Output Capacitance
f=1.0MHz
C
rss
Reverse Transfer Capacitance
Total Gate Charge
Q
g
V
DS
= -15V, I = -5A,
D
1
Q
Q
gs
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
V
GS
= -10V
1.8
Switching Characteristics
9
t
d(on)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
ns
ns
ns
ns
13
48
20
t
r
V
DD
= -15V, I = -10A,
D
V
GS
=-10V, R
GEN
=2.5
Ω
t
d(o
f
f)
t
f
Drain-Source Diode Characteristics and Maximum Ratings
-15
-60
-1.2
–
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
A
A
I
SM
-0.8
V
SD
Drain to Source Diode Forward Voltage
V
GS
=0V, I
=25
℃
,
DD
= -24V,I =-2.8A,
S
= -15A
V
Characteristics
T
J
64
trr
Reverse Recovery Time
ns
V
F
25
Qrr
Reverse Recovery Charge
–
–
nC
dI/dt=-100A/
μ
s
Note :
1.Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: T
J
=25℃, V
GS
=10V, R
G
=25Ω, L=0.5mH, IAS=-12.7A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
02
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 5: Gate Charge Characteristics
Figure 4: Body Diode Characteristics
Figure 6: Capacitance Characteristics
03
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Typical Performance Characteristics
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8:Normalized on Resistance vs.
Junction Temperature
Figure 10: Maximum Continuous Drain Current
vs. Case Temperature
Figure 9: Maximum Safe Operating Area
Figure 11: Maximum Effective Transient
Thermal Impedance, Junction-to-Ambient
04
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Test Circuit
05
P-Ch 30V Fast Switching MOSFETs
5
0
P
0
3D
Package Mechanical Data- PDFN3.3X3.3-8L
06
