HL-6003

N-Ch 60V Fast Switching MOSFETs  

60N02  

6 N02  

60

4

0

6

3

06A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

Product Summary  



Green Device Available  



Super Low Gat

e

C

harge  



Excellent CdV/dt effect decline  



Advanced high cell density Trench  

technology  

BVDSS  

RDSON  

ID  

60V  

75mΩ  

3A  

SOT23 Pin

 

Configuration  

Description  

The 6003 is the high cell density trenched  

N-ch MOSFETs, which provides excellent  

RDSON and efficiency for most of the small  

power switching and load switch applications.  

The 6003 meets the RoHS and Green  

Product requirement with full function reliability  

approved.  

Absolute Maximum Ratings  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

60  

Units  

V

V

DSS  

V

GSS  

Gate-Source Voltage  

±20  

V

T

T

A

A

= 25

℃

 

= 100

℃  

3

2

A

A

I

D  

Continuous Drain Current  

I

P

DM  

Pulsed Drain Current

note1  

Power Dissipation  

12  

1.5  

A

W

D

T

A

= 25

℃  

R

θ

JA  

Thermal Resistance, Junction to Ambient  

Operating and Storage Temperature Range  

83  

℃

/W  

℃

T

J

, T

STG  

-55 to +150  

01  

N-Ch 60V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6003  

6 N02  

4606A  

20N02  

2 N02  

Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

U

n

its  

Off Characteristic  

V

(BR)DSS  

DSS  

GSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

V

V

DS

=60V, V

GS

=0V,  

D

=250

μ

A  

60  

–

–

–

–

–

–

1

V

μ

A  

nA  

I

I

±100  

On Characteristics  

V

GS(th)  

Gate Threshold Voltage  

V

V

V

GS

=4.5V, I  

D

=250

μ

A  

1

–

–

1.4  

75  

85  

2

100  

120  

V

D

=3A  

=2A  

Static Drain-Source on-Resistance  

note2  

R

DS(on)  

m

Ω  

D

Dynamic Characteristics  

C

iss  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

–

–

–

–

–

–

350  

29  

23  

9

1.5  

2

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

C

oss  

V

DS

=25V, V

GS

=0V, f=1.0MHz  

C

rss  

Q

Q

Q

g

gs  

V

DS

=30V, I  

D

=3A, V

GS

=10V  

gd  

Switching Characteristics  

t

d(on)  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

5

7

37  

22  

–

–

–

–

ns  

ns  

ns  

ns  

t

r

V

DD

=30V,I  

D

=2A, R

GEN

=3

Ω

,  

t

d(o

f

f)  

V

GS

=10V  

t

f

Drain-Source Diode Characteristics and Maximum Ratings  

Diode Characteristics  

I

S

Maximum Continuous Drain to Source Diode Forward Current  

Maximum Pulsed Drain to Source Diode Forward Current  

–

–

–

–

–

–

3

12  

1.2  

A

A

V

I

SM  

V

SD  

Drain to Source Diode Forward Voltage

 

V

GS

= 0V, I =3A  

S

Notes:  

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

02  

N-Ch 60V Fast Switching MOSFETs  

60N02  

6 N02  

4606A  

20N02  

2 N02  

Typical Electrical and Thermal Characteristics (Curves)  

Figure1: Output Characteristics  

Figure 2: Typical Transfer Characteristics  

Figure 3:On-resistance vs. Drain Current  

Figure 5: Gate Charge Characteristics  

Figure 4: Body Diode Characteristics  

Figure 6:Capacitance Characteristics  

03  

N-Ch 60V Fast Switching MOSFETs  

60N02  

6 N02  

20N02  

2 N02  

Typical Performance Characteristics  

Figure 7: Normalized Breakdown Voltage vs.  

Figure 8: Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

Figure 9: Maximum Safe Operating Area  

Fig

u

F

r

F

e

i

g

1u0

r

:e

M

1

a

0

x

:

i

M

m

aux

m

i

m

Cuo

m

n

t

C

i

n

o

u

n

o

t

i

u

n

s

u

D

o

r

u

a

s

i

n

D

r

C

au

i

n

rr

C

e

n

u

t

rr  

vs. Ambient Temperature  

Figure 11:Maximum Effective Transient Thermal  

Impedance, Junction-to-Ambient  

04  

N-Ch 60V Fast Switching MOSFETs  

6003  

N02  

6 N02  

4606A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

Test Circuit  

05  

N-Ch 60V Fast Switching MOSFETs  

6003  

N02  

6 N02  

4606A  

N-Ch 20V Fast Switching MOSFETs  

20N02  

2 N02  

SOT-23 Package Information  

DIMENSIONS ( unit : mm )  

Symbol  

Min  

0.9  

0.3  

2.8  

—  

Typ  

1.01  

0.42  

2.92  

1.9  

Max  

1.15  

0.5  

3

Symbol  

Min  

0.01  

0.08  

1.2  

—  

Typ  

0.05  

0.13  

1.33  

0.95  

0.42  

0.2  

Max  

0.1  

0.15  

1.4  

—  

A

A

1  

b

p  

c

D

e

E

e

1

—  

H

E

L

p  

2.25  

0.45  

—  

2.4  

2.55  

0.55  

—  

0.3  

—  

0.5  

—  

Q

w

v

0.49  

0.1  

06