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HL-60N02

Part #HL-60N02
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HL-60N02
N-Ch 20V Fast Switching MOSFETs  
6
0
N
0
2  
Green Device Available  
Super Low Gat
e
C
harge  
Excellent CdV/dt effect decline  
Advanced high cell density Trench  
technology  
Product Summary  
BVDSS  
RDSON  
ID  
20V  
4.7mΩ  
60A  
100% EAS Guaranteed  
Description  
TO252 Pin Configuration  
The 60N02
 
is the high cell density trenched
 
N-ch  
MOSFETs, which provide excellent RDSON and  
gate charge for most of the synchronous buck  
converter applications.  
The 60N02
 
meet the RoHS and Green Product,  
requirement 100%
 
EAS guaranteed with  
full function reliability approved.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
V

DS  

±
20  
20  
V
1
A
I

D  

D
@T

C  

C
=100℃  
I
@T

G

=

S

25℃  
Continuous Drain Current, V
 
@ 10V  
Continuous Drain Current, V
G

G

S

S

@ 10V  
60  
35  
1
A
Pulsed Drain Current  
2
A
I
DM  
240  
Single Pulse Avalanche Energy  
3
mJ  
A
I

AS  

E
31  
48  
Avalanche Current  
@T

A
S

=25℃  
38  
Total Power Dissipation  
4
W
℃
℃
T
S

C

TG  
Storage Temperature Range  
P
D
-55 to 150  
-55 to 150  
T
J
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Typ.  
Max.  
Unit  
R
θ
JC  
Thermal
Resistance Junction-Case  
1
—
–  
4.2  
℃
/W  
01  

N-Ch 20V Fast Switching MOSFETs  
6
0
N
0
2  
Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off  
On  
Characteristic  
V
(BR)DSS  
20  
–
–
–
–
–
1
V
Drain-Source
Breakdown Voltage  
Zero
Gate Voltage Drain Current  
Gate
to Body Leakage Current  
V
V
V

GS

=20V,

D

V
GS
=0V,  
=0V, I
 
=250
μ
A  
D

D

S

S

=0V, V
GS
=±12V  
I
DSS  
μ
A  
I
GSS  
–
±100  
nA  
Characteristics  
V
GS(th)  
0.4  
0.7  
4.8  
6.8  
1
V
Gate
Threshold Voltage  
V
V
V
=V
GS
, I
 
=250
μ
A  
Static
Drain-Source on-Resistance note  

DS

=4.5V,

D

I =25A  
3
–
6.5  
m
Ω  
G

G

S

S

=2.5V, I

D  

D
=15A  
R
DS(on)  
–
10  
Dynamic  
Characteristics  
C
i
ss  
–
–
–
–
–
–
1832  
289  
271  
23  
–
–
–
–
–
–
Input
Capacitance  
C
o
s
s  
pF  
nC  
Output
Capacitance  
V
V
DS
=10V, V
GS
=0V, f=1.0MHz  
C
rss  
Reverse
Transfer Capacitance  
Q
g
Total
Gate Charge  
Q
gs  
4.5  
Gate-Source
Charge  

DS

=10V, I  
D
=25A, V
GS
=4.5V  
Q
gd  
7.3  
Gate-Drain(“Miller”)
Charge  
Switching
Characteristics  
t
d(on)  
–
–
–
–
15  
37  
52  
21  
–
–
–
–
ns  
ns  
ns  
ns  
Turn-on
Delay Time  
Turn-on
Rise Time  
Turn-off
Delay Time  
Turn-off
Fall Time  
t
r
V
=10V,I =25A,
 
R

GEN

=3
Ω
,  
V

D

G

S

S

=4.5V

D  

t
d(off)  
t
f
Drain-Source
Diode Characteristics and Maximum Ratings  
I
S
–
–
–
–
–
–
–
60  
240  
1.2  
–
A
A
Maximum
Continuous Drain to Source Diode Forward Current  
I
SM  
Maximum
Pulsed Drain to Source Diode Forward Current  
V
SD  
V
GS  
S
–
V
Drain
to Source Diode Forward Voltage  
Body
Diode Reverse Recovery Time  
Body
Diode Reverse Recovery Charge  
=0V, I =30A  
t
rr  
25  
21  
ns  
nC  
IF=25A,dI/dt=100A/
μ
s  
Q
rr  
–
Notes:  
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  
2. EAS condition: T

J

=25℃, V
DD
=10V, V
G
=4.5V, R
G
=25Ω, L=0.5mH, I
AS
=13.8A  
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  
02  

N-Ch 20V Fast Switching MOSFETs  
6
0
N
0
2  
Typical Performance Characteristics  
Figure1: Output Characteristics  
Figure 2: Typical Transfer Characteristics  
Figure 3:On-resistance vs. Drain Current  
Figure 5: Gate Charge Characteristics  
Figure 4: Body Diode Characteristics  
Figure 6: Capacitance Characteristics  
03  

N-Ch 20V Fast Switching MOSFETs  
6
0
N
0
2  
Typical Performance Characteristics  
Figure 7: Normalized Breakdown Voltage vs. Junction
T
F
e
i
m
g
u
p
r
er
8
a
:
t
u
N
r
o
e
r
malized on Resistance vs. Junctio  
Figure 9: Maximum Safe Operating Area  
FFigure 10: Maximum Continuous Drain Curr  
Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
04  

N-Ch 20V Fast Switching MOSFETs  
6
0
N
0
2  
Package Mechanical Data-TO-252-4R  
E
Dimensions  
Millimeters  
C2  
B2  
Ref.  
Inches  
Min.  
2.1  
T
y
p.  
Max.  
2.5  
Min.  
0.083  
0
T
y
p.  
Max.  
0.098  
0.004  
0.034  
0.216  
0.024  
0.023  
0.248  
A
A2  
B
0
0.1  
0.66  
5.18  
0.4  
0.86  
5.48  
0.6  
0.026  
0.202  
0.016  
0.017  
0.232  
B2  
C
C2  
D
0.44  
5.9  
0.58  
6.3  
C
B
D1  
E
5.30REF  
0.209REF  
G
DETA IL
 
A  
6.4  
6.8  
0.252  
0.182  
0.176  
0.374  
0.043  
0.053  
0.268  
E1  
G
4.63  
4.47  
9.5  
4.67  
10.7  
1.21  
1.65  
0.184  
0.421  
0.048  
0.065  
H
L
1.09  
1.35  
TO-  
L2  
V1  
V2  
E1  
7°  
7°  
L2  
0°  
6°  
0°  
6°  
Reel Spectification-TO-252-4R  
P0  
P2  
Dimensions  
t1  
Ref.  
M
i
llimeters  
Inches  
Typ.  
A
M
i
n.  
15.9  
1.65  
7.4  
Typ.  
16  
M
a
x
.  
16.1  
1.85  
7.6  
M
i
n.  
M
a
x
.  
A
W
E
0.626  
0.065  
0.291  
0.055  
0.055  
0.154  
0.311  
0.075  
0.27  
0.63  
0.634  
0.073  
0.299  
0.063  
0.063  
0.161  
0.319  
0.083  
0.276  
0.417  
0.113  
0.011  
1.75  
7.5  
1.5  
1.5  
4
0.069  
0.295  
0.059  
0.059  
0.157  
0.315  
0.079  
0.271  
0.413  
0.109  
P1  
A0  
F
B
K0  
D0  
D1  
P0  
P1  
P2  
A0  
B0  
K0  
T
1.4  
1.6  
5°  
1.4  
1.6  
3.9  
4.1  
7.9  
8
8.1  
1.9  
2
2.1  
6.85  
10.45  
2.68  
0.24  
0.1  
6.9  
10.5  
2.78  
7
10.6  
2.88  
0.27  
0.411  
0.105  
0.009  
0.004  
1.567  
t1  
10P0  
39.8  
40  
40.2  
1.575  
1.583  
05  

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