HL-60N04D
| Part # | HL-60N04D |
Download  | HL-60N04D |
N-Ch 40V Fast Switching MOSFETs
60
N
0
4
D
Product Summary
Green Device Available
Fast Switching Speed
BVDSS
RDSON
ID
100% EAS Guaranteed
40V
6.9mΩ
60A
Advanced Trench MOS Technology
PDFN3X3 Pin Configuration
Applications
High Frequency Switching and Synchronous
Rectification.
DC/DC Converter.
Absolute Maximum Ratings
Sy
m
bol
Parameter
Rating
40
Units
V
Drain-Source
V
o
ltage
V
DS
Gate-Sou
r
ce Voltage
±
20
V
V
GS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Single Pulse
A
v
a
lanche Energy
1
60
A
I
D
@T
C
=25
℃
1
35
A
I
D
@T
C
=100
℃
2
130
A
I
DM
3
48
mJ
A
EAS
Av
a
lanche Current
35
I
AS
Total Power Dissipation
4
39
W
Storage Temperature Range
-55 to 150
-55 to 150
℃
℃
T
STG
Operating Junction Temperature Range
T
J
Thermal Data
Thermal Data
Sy
m
bol
Parameter
Typ.
—
M
a
x
.
60
Unit
Thermal Resistance Junction-ambient (Stead
y
S
tate)
Thermal Resistance Junction-Case
1
R
R
θ
JA
θ
JC
℃
/W
/W
1
—
3.2
01
N-Ch 40V Fast Switching MOSFETs
60N04D
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Sy
m
bol
BV
DSS
Parameter
Conditions
=250uA
M
i
n.
40
—
Typ.
—
M
a
x
.
—
8.5
15
3
Unit
V
Drain-Source Breakdown
V
o
ltage
V
GS
=0
V
, I
GS
=10
V
, I
GS
=4.5
V
, I
GS
=V
DS
, I
D
V
D
=12A
6.9
10
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold
V
o
ltage
2
m
Ω
V
V
D
=10A
—
V
GS(th)
V
D
=250uA
1.35
—
—
V
DS
=32
V
,
V
GS
=0
V
, T
DS
=32
V
,
V
GS
=0
V
, T
GS
=
±
20V ,
V
DS
=0V
DS
=0
V
,
V
GS
=0
V
,
f
=1MHz
J
=25
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
V
J
=55
℃
—
—
5
I
GSS
Gate-Source Leakage Current
Gate Resistance
V
—
—
±
100
—
—
—
—
—
—
—
—
—
—
—
nA
R
g
V
—
1.7
5.8
3
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
Q
gs
gd
V
DS
=20
V
,
V
GS
=4.5
V
, I
D
=12A
—
nC
ns
Q
—
1.2
14.3
5.6
20
T
d
(
o
n)
—
T
r
—
V
DD
=15
V
,
V
GS
=10
V
, R
G
=3.3
Ω
I
D
=1A
T
d
(
o
ff)
Turn-Off Delay Time
Fall Time
—
T
f
—
11
C
iss
Input Capacitance
—
690
193
38
C
oss
Output Capacitance
Re
v
e
rse Transfer Capacitance
V
DS
=15
V
,
V
GS
=0
V
,
f
=1MHz
—
pF
C
rss
—
Diode Characteristics
Diode Characteristics
Sy
m
bol
Parameter
Continuous Source Current
1,5
Diode Forward
V
o
ltage
Conditions
M
i
n.
Typ.
M
a
x
.
Unit
A
I
S
V
G
=V
D
=0
V
,
F
orce Current
—
—
—
—
60
1
V
SD
2
V
GS
=0
V
, I
S
=1
A
,
T
J
=25
℃
V
Notes:
1
.
T
he data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
.
T
he data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3
.
T
he EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,IAS=31A
4
.
T
he power dissipation is limited by 150℃ junction temperature
5
.
T
he data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
02
N-Ch 40V Fast Switching MOSFETs
60N04D
Typical Electrical and Thermal Characteristics (Curves)
Figure1: Output Characteristics
Figure 2: On-Resistance vs G-S Voltage
Figure 3:Source Drain Forward Characteristics
Figure 5: Normalized VGS(th) vs TJ
Figure 4: Gate-Charge Characteristics
Fig.5
Figure 6:Normalized RDSON vs TJ
03
N-Ch 40V Fast Switching MOSFETs
6
0
N
0
4
D
Typical Performance Characteristics
Figure 7:Capacitance
Figure 8: Safe Operating Area
Figure 9:Normalized Maximum Transient Thermal Impedance
Fig
u
F
r
F
e
i
g
1u1
r
:e
U
1n
0
c
:
l
M
a
m
a
x
p
i
m
e
d
u
I
m
n
d
C
u
o
c
n
t
i
t
v
i
n
e
u
W
o
a
u
v
s
e
D
f
o
r
a
r
m
in Curr
Figure 10:Switching Time W aveform
04
N-Ch 40V Fast Switching MOSFETs
60N04D
PDFN3*3-8L Package Information
05
