HL-80N03F

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  



Green Device Available  



Super Low Gat

e

C

harge  



Excellent CdV/dt effect decline  



Advanced high cell density Trench  

technology  

Product Summary  

BVDSS  

RDSON  

ID  

30V  

3.8mΩ  

80A  



100% EAS Guaranteed  

Description  

PRPAK5*6 Pin Configuration  

The 80N03F

 

is the high cell density trenched

 

N-ch  

MOSFETs, which provide excellent RDSON and  

gate charge for most of the synchronous buck  

converter applications.  

The 80N03F

 

meet the RoHS and Green Product,  

requirement 100%

 

EAS guaranteed with  

full function reliability approved.  

Absolute Maximum Ratings  

Symbol  

Parameter  

Limit  

Unit  

V

V

A

A

A

W

W/

℃

 

mJ  

℃

30  

±20  

V

DS  

Drain-Source Voltage  

V

GS  

Gate-Source Voltage  

80  

46  

200  

65  

I

D

Drain Current-Continuous  

I

D

(100

℃

)  

Drain Current-Continuous(T  

C

=100℃)  

(Note 1)  

I

DM  

Pulsed Drain Current  

P

D

Maximum Power Dissipation  

Derating factor  

0.52  

150  

-55 To 150  

(Note 5)  

E

AS  

Single pulse avalanche energy  

T

J

,T

STG  

Operating Junction and Storage  

Thermal Data  

Symbol  

Parameter  

Typ.  

Max.  

Unit  

R

θ

JA  

Thermal Resistance,Junction-to-Case(Not

e

2

)  

–

0.56  

℃

/W  

01  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  

Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  

Symbol  

Parameter  

Condition  

Min  

Typ  

Max  

Unit  

Off

Characteristics  

BV

DSS  

Drain-Source

Breakdown Voltage  

Zero

Gate Voltage Drain Current  

Gate-Body

Leakage Current  

V

V

V

GS

=0V I  

D

=250

μ

A  

30  

–

–

–

–

–

1

V

I

DSS  

μ

A  

nA  

I

GSS  

–

±100  

On

Characteristics

(Note 3)  

V

GS(th)  

Gate

Threshold Voltage  

Drain-Source

On-State Resistance  

Forward

Transconductance  

V

V

V

V

D

=250

μ

A  

1

–

1.6  

3.8  

6.9  

–

2.5  

5.0  

11.0  

–

V

mΩ  

S

D

=20A  

R

DS(ON)  

–

g

FS  

D

20  

Dynamic

Characteristics

(Note4)  

C

C

C

l

s

s  

o

s

s  

rss  

Input

Capacitance  

–

–

–

1400  

205  

177  

–

–

–

PF  

PF  

PF  

V

Output

Capacitance  

F=1.0MHz  

Reverse

Transfer Capacitance  

Switching

Characteristics

(Note 4)  

t

t

d(on)  

Turn-on

Delay Time  

Turn-on

Rise Time  

Turn-Off

Delay Time  

Turn-Off

Fall Time  

Total

Gate Charge  

Gate-Source

Charge  

Gate-Drain

Charge  

–

–

–

–

–

–

–

9

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

t

r

8

V

D

=20A  

V

d(off)  

28  

5

t

f

Q

g

32.3  

4.9  

6.9  

Q

gs  

V

V

D

=20A, V

GS

=10V  

Q

gd  

Diode Characteristics  

Drain-Source

Diode Characteristics  

V

SD  

Diode

Forward Voltage

(Note 3)  

Diode

Forward Current

(Note 2)  

Reverse

Reco

v

e

ry Time  

S

=20A  

–

–

–

–

0.85  

1.2  

65  

27  

20  

V

A

I

S

–

–

–

t

rr  

nS  

nC  

TJ

= 25°C, IF = 20A  

di/dt = 100A/

μ

s(Note

3  

)

Qrr  

Reverse

Reco

v

e

ry Charge  

Forward

Turn-On Time  

t

on  

Intrinsic

turn-on time is negligible (turn-on is dominated by LS+LD)  

Note :  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t ≤ 10 sec.  

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production  

5. EAS condition

：

T

j=25℃,V

DD

=15V,V

G

=10V,L=0.5mH,Rg=25Ω.  

02  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  

Typical Electrical and Thermal Characteristics (Curves)  

Figure1: Output Characteristics  

Figure 4: Rdson-JunctionTemperature  

Figure 2 Transfer Characteristics  

Qg Gate Charge (nC)  

Figure 5 Gate Charge  

ID- Drain Current (A)  

Figure 3 Rdson- Drain Current  

Vsd Source-Drain Voltage (V)  

Figure 6 Source- Drain Diode Forward  

3 Rdson On-Resistance Normalized ID- Drain Curr

en  

Figure 2:Transfer Characteristics  

Figure 3: Rdson- Drain Current  

Figure 5: Gate Charge  

Figure 6: Source- Drain Diode Forward  

03  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  

Typical Performance Characteristics  

Figure 7: Capacitance vs Vds  

Figure 9: BVDSS vs Junction Temperature  

Figure 8: Safe Operation Area  

Fig

u

F

r

F

e

i

g

1u0

r

:eV

1

G

0S

:

(

M

t

h

a

)x

v

i

m

s

J

u

u

m

n

c

C

t

o

i

o

n

n

t

i

T

n

e

u

m

o

u

p

s

e

D

r

a

r

t

a

u

i

n

r

e

C

urr  

Figure 11: Normalized Maximum Transient Thermal Impedance  

04  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  

Test Circuit  

05  

N-Ch 30V Fast Switching MOSFETs  

N-Ch 20V Fast Switching MOSFETs  

60N02  

6 N02  

80N03F  

46 6A  

20N02  

2 N02  

Package Mechanical Data-DFN5*6-8L-JQ Single  

Common  

Symbol  

mm  

Inch  

Mim  

1.03  

0.34  

0.824  

4.8  

4.11  

4.8  

5.95  

5.65  

1.6  

Max  

Min  

Max  

0.0461  

0.0189  

0.082  

0.2126  

0.1697  

0.1969  

0.2421  

0.2303  

/

A

b

c

1.17  

0.48  

0.097  

5.4  

4.31  

5

6.15  

5.85  

/

0.0406  

0.0134  

0.0324  

0.189  

0.1618  

0.189  

0.2343  

0.2224  

0.063  

D

D1  

D2  

E

E1  

E2  

e

1.27 BSC  

0.05 BSC  

L

0.05  

0.25  

0.5  

0.5  

3.5  

0.18  

0.002  

0.0098  

0.0197  

0.0197  

0.1378  

0.007  

L1  

L2  

H

0.38  

0.38  

3.3  

/

0.015  

0.015  

0.1299  

/

I

06