HL-9435A
| Part # | HL-9435A |
Download  | HL-9435A |
P-Ch 30V Fast Switching MOSFETs
9
4
3
5A
Green Device Available
Super Low Gat
e
C
harge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
-30V
RDSON
ID
36m
Ω
-5.3A
Description
SOP8 Pin Configuration
The 9435A
is the high cell density trenched
P-ch
MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The 9435A
meet the RoHS and Green Product
requirement with
full function reliability approved.
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
±
20
-5.3
V
-30
V
1
1
2
A
-4.7
A
-20
A
3
—
mJ
A
—
4
1.5
W
℃
℃
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-
A
m
bient
1
Typ.
—
Max.
Unit
55
℃
/W
R
θ
JA
01
P-Ch 30V Fast Switching MOSFETs
9
4
3
5A
Electrical Characteristics (T
J
=25 ℃ unless otherwise specified）
Symbol
Parameter
Conditions
Unit
Min.
Typ.
Max.
Drain-Source Breakdown
V
o
ltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
GS
= 0
V
, I
DS
= -30
V
, V
GS
= 0V
DS
= 0
V
, V
GS
= ±20V
DS
= V
GS,
= -250
μ
A
GS
= -10
V
, I
= -4.1A
GS
= -4.5V, I
= -3A
D
= -250
μ
A
V
μ
A
nA
V
-30
–
–
–
-1
DSS
V
–
–
GSS
V
–
±100
-2.5
51
GS(th)
Gate-Source Threshold
v
o
ltage
V
I
D
-1
–
-1.5
36
48
V
D
R
DS(on)
Drain-Source on-State Resistance
3
m
Ω
V
D
79
Characteri
s
tics
4
iss
Input Capacitance
–
–
–
530
70
–
–
–
V
GS
= 0
V
,
V
DS
= -15
V
,
oss
Output Capacitance
pF
f= 1.0MHz
rss
Re
v
e
rse Transfer Capacitance
56
Switching Characteri
s
tics
4
Q
g
Total Gate Charge
–
–
–
–
–
–
–
6.8
1
–
–
–
–
–
–
–
V
GS
= -10
V
, V
DS
= -15
V
,
= -4.1A
Q
gs
Gate
−
Source Charge
Gate
−
Drain Charge
Turn-on Delay Time
Rise Time
nC
ns
I
D
Q
gd
1.4
14
61
19
10
t
d
(
o
n)
t
r
V
GS
= -10
V
, V
DS
= -15V ,
R
L
= 15
Ω
,R
GEN
= 2.5
Ω
t
d
(
o
ff)
Turn-off Delay time
Fall Time
t
f
Source-Drain Body Diode Characteri
s
tics
Diode Forward
V
o
ltage
Continuous Source Current
V
SD
3
I
S
= -4.1A, V
GS
= 0V
–
–
–
–
-1.2
-5.3
V
A
I
S
Notes:
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on
the user’s specific board design.
3. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4. This value is guaranteed by design hence it is not included in the production test.
02
P-Ch 30V Fast Switching MOSFETs
9
4
3
5A
Typical Performance Characteristics
Figure1: Output Characteristics
Figure 2: Transfer Characteristics
Figure 3: Forward Characteristics of Reverse
Figure 4:
RDS(ON) vs
. VGS
Figure 5:
RDS(ON) vs . ID
Figure 6:
Normalized RDS(on) vs . Temperature
03
P-Ch 30V Fast Switching MOSFETs
9
4
3
5A
Typical Performance Characteristics
Figure 7:Capacitance Characteristicsion Temperature
Figure 8: Gate Charge Characteristics
04
P-Ch 30V Fast Switching MOSFETs
9
4
3
5A
Package Mechanical Data-SOP-8
Symbol
0°
8°
0°
8°
θ
05
