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HL-9926A

Part #HL-9926A
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HL-9926A
Dual N-Ch 20V Fast Switching MOSFETs  
99
26
A
Product Summary  
Green Device Available  
Super Low Gat
e
C
harge  
Excellent CdV/dt effect decline  
Advanced high cell density Trench  
technology  
BVDSS  
RDSON  
ID  
20V  
20mΩ  
6A  
Description  
Dual SOP8 Pin Configuration  
the 9926A uses advanced trench technology  
and design
 
to provide excellent RDS(ON) with  
low gate charge.it can be used in a wide variety  
of applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
Drain-Source
Voltage  
Gate-Sou
r
ce
V
oltage  
V
DS  
GS  
20  
±12  
V
V
Continuous
Drain Current, V

GS

@ 4.5V

1  

I
I
P
D
D
@T
A
=25
℃
 
6
A
Continuous
Drain Current, V

GS

@ 4.5V

1  

@T
A
=70
℃  
4.8  
A
2
Pulsed
Drain Current  
I
DM  
25  
A
3
Total Power Dissipation  
D
@T
A
=25
℃  
1.65  
W
℃
℃
Storage
Temperature Range  
T
STG  
-55 to 150  
-55 to 150  
Operating
Junction Temperature Range  
T
J
Thermal Data  
Symbol  
Parameter  
Typ.  
—  
Max.  
78  
Unit  
R
R
θ
JA  
θ
JC  
Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Case

1  

℃
/W  
/W  
—  
—  
℃
01  

Dual N-Ch 20V Fast Switching MOSFETs  
9926A  
Electrical Characteristics (T

J

=25 ℃ unless otherwise specified）  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off  
On  
Characteristic  
Drain-Source
Breakdown Voltage  
Zero
Gate Voltage Drain Current  
Gate
to Body Leakage Current  
20  
–
–
–
–
–
1
V
V
V
V
GS  
DS  
DS  
D
V
(BR)DSS  
=0V, I =250
μ
A  
μ
A  
nA  
GS  
I
DSS  
GSS  
=20V, V
 
=0V,  
–
±100  
GS  
I
=0V, V
 
=±12V  
Characteristics  
Gate
Threshold Voltage  
0.4  
0.7  
1
V
V
V
V
DS  
GS  
GS  
GS,
D  
=V I
 
=250
μ
A  
V
GS(th)  
D
=4.5V, I
 
=6A  
–
–
20  
28  
38  
Static
Drain-Source on-Resistance  
R
DS(on)  
m
Ω  
D
=2.5V, I
 
=5A  
25.5  
note  
2
Dynamic  
Characteristics  
Input
Capacitance  
–
–
–
–
–
–
358  
69.3  
58.5  
5.6  
0.8  
1
–
–
–
–
–
–
C
iss  
V
V
DS  
DS  
GS  
Output
Capacitance  
=10V, V
 
=0V, f=1.0MHz  
pF  
nC  
C
oss  
Reverse
Transfer Capacitance  
C
rss  
Total
Gate Charge  
Q
g
D
GS  
Gate-Source
Charge  
=10V, I
 
=3A, V
 
=4.5V  
Q
Q
gs  
gd  
Gate-Drain(“Miller”)
Charge  
Switching  
Characteristics  
Turn-on
Delay Time  
Turn-on
Rise Time  
Turn-off
Delay Time  
Turn-off
Fall Time  
–
–
–
–
16  
51  
21  
19  
–
–
–
–
t
d(on)  
V
DS  
t
r
=10V,  
ns  
I
D
=6A, R

GEN

=3
Ω
, V

GS

=4.5V  
t
d(off)  
t
f
Drain-Source  
Diode Characteristics and Maximum Ratings  
I
S
Maximum
Continuous Drain to Source Diode Forward Current  
–
–
–
–
–
–
6
A
A
V
I
SM  
Maximum
Pulsed Drain to Source Diode Forward Current  
24  
1.2  
Drain
to Source Diode Forward Voltage  
V
GS  
S
V
SD  
=0V, I =6A  
Notes:  
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  
02  

Dual N-Ch 20V Fast Switching MOSFETs  

9926A  
Typical Electrical and Thermal Characteristics (Curves)  
Figure1: Output Characteristics  
Figure 2: Typical Transfer Characteristics  
Figure 3:On-resistance vs. Drain Current  
Figure 5: Gate Charge Characteristics  
Figure 4: Body Diode Characteristics  
Figure 6: Capacitance Characteristics  
03  

Dual N-Ch 20V Fast Switching MOSFETs  

9
9
2
6
A
Typical Performance Characteristics  
Figure 7: Normalized Breakdown Voltage vs.  
Figure 8: Normalized on Resistance vs.  
Junction Temperature  
Junction Temperature  
Figure 9: Maximum Safe Operating Area  
Fig
u
F
r
F
e
i
g
1u0
r
:e
M
1
a
0
x
:
i
M
m
aux
m
i
m
Cuo
m
n
t
C
i
n
o
u
n
o
t
i
u
n
s
u
D
o
r
u
a
s
i
n
D
r
C
au
i
n
rr
C
e
n
u
t
rr  
vs. Ambient Temperature  
Figure 11:Maximum Effective Transient Thermal  
Impedance, Junction-to-Ambient  
04  

Dual N-Ch 20V Fast Switching MOSFETs  
9926A  
Package Mechanical Data-SOP-8  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min.  
Max.  
1.75  
0.25  
1.55  
0.51  
0.25  
5.1  
Min.  
0.053  
0.004  
0.053  
0.013  
0.006  
0.185  
0.15  
Max.  
0.069  
0.01  
A
A1  
A2  
b
1.35  
0.1  
1.35  
0.33  
0.17  
4.7  
0.061  
0.02  
c
0.01  
D
0.2  
E
3.8  
4
0.157  
0.244  
E1  
e
5.8  
6.2  
0.228  
1.270(BSC)  
0.050(BSC)  
L
0.4  
0°  
1.27  
8°  
0.016  
0°  
0.05  
8°  
θ
05  

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