HL-Haolin-Elec-C5027
| Part # | HL-Haolin-Elec-C5027 |
Download  | HL-Haolin-Elec-C5027 |
C5027
High Voltage and High Reliability
•
•
High Speed Switching
Wide SOA
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
1100
V
V
CBO
CEO
EBO
800
7
V
I
I
3
10
A
C
A
CP
B
I
1.5
A
P
Collector Dissipation ( T
=25
°
C)
50
W
°
C
°
C
C
C
T
T
Junction
T
e
mperature
Storage
T
e
mperature
150
J
– 55 ~ 150
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
I
I
I
= 1mA, I
= 0
1100
800
7
V
V
V
V
CBO
CEO
EBO
C
C
E
E
BV
BV
= 5mA, R
=
∞
BE
= 1mA, I
= 0
C
V
(sus)
I =
1.5A, I
= -I
= 0.3A
800
CEX
C
B1
B2
L = 2mH, Clamped
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
= 800
V
, I
= 0
10
10
40
µ
A
µ
A
CBO
EBO
CB
EB
E
= 5
V
, I
= 0
C
h
h
V
V
= 5V, I
= 0.2A
10
8
FE1
FE2
CE
CE
C
= 5V, I
= 1A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
I
= 1.5A, I
= 0.3A
2
V
V
CE
C
C
B
= 1.5A, I
= 0.3A
1.5
BE
B
C
V
= 10V, I
= 0, f = 1MHz
60
15
pF
MHz
µ
s
ob
CB
E
f
t
t
t
Current Gain Bandwidth Product
Turn ON Time
V
V
I
= 10V, I
= 0.2A
T
CE
C
= 400V
0.5
3
ON
CC
= 5I
= -2.5I
= 2A
Storage Time
C
B1 B2
µ
s
STG
F
R =
200
Ω
L
Fall Time
0.3
µ
s
h
Classification
FE
Classification
N
R
O
h
10 ~ 20
15 ~ 30
20 ~ 40
FE1
Typical Characteristics
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1000
100
10
V
CE
= 5V
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 80mA
I
B
= 60mA
I
B
= 50mA
I
B
= 40mA
I
B
= 30mA
I
B
= 20mA
I
B
= 10mA
I
B
= 0
1
0.01
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
C
= 5 I
B
V
CE
= 5V
V
BE
(sat)
1
V
CE
(sat)
0.1
0.01
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
10
V
CC
= 400V
5.I
B
1 = -2.5.I
B
2 = I
C
t
STG
I
C
MAX.(Pulse)
I
C
MAX(Continuous)
1
1
t
ON
t
F
0.1
0.1
0.01
1E-3
0.01
0.1
1
10
1
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
Typical Characteristics
(Continued)
100
80
70
60
50
40
30
20
10
0
I
B
2 = -0.3A
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[
o
C], CASE TEMPERATURE
Figure 7. Reverse Bias Operating Area
Figure 8. Power Derating
Package Demensions
TO-220
4.50
±
0.20
9.90
±
0.20
(8.70)
+0.10
1.30
–0.05
ø3.60
±
0.10
(45
°
)
1.27
±
0.10
1.52
±
0.10
0.80
±
0.10
+0.10
–0.05
0.50
2.40
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
10.00
±
0.20
Dimensions in Millimeters
