HL-Haolin-Elec-HD100N03-BAF

HP100N03/HD100N03  

V

R

DSS  

30V  

Features  

DS(

on) Vgs=10V typ.  

3.1mΩ  

4.1mΩ  

4.3mΩ  

7mΩ  

ò

Lead free and Green Device Available  

ò

Low Rds-on to Minimize Conductive Loss  

ò

High avalanche Current  

R

DS(

on) Vgs=4.5V typ.  

max.  

I

D @ Vgs=10V (Silicon limited)  

100A  

80A  

I

D @ Vgs=10V (Package limited)  

Application  

ò

Load Switch  

TO-220  

ò

SPMS  

TO252  

G

D

S

1.Gate 2.

 

Drain 3.

 

Source  

Absolute Maximum Ratings

(T

A

=25°C unless otherwise noted)  

Symbol  

V

DSS  

Param  

Maximum  

Unit  

Drain-to-Source Voltage  

Gate-to-Source Voltage  

30  

±20  

100  

80  

V

V

V

GSS  

T

C

=25°C (Silicon limited)  

T

C

=100°C (Silicon limited)  

T

C

=25°C (Package limited)  

I

D

Vgs=10V  

70  

100  

65  

70  

–

A

Continuous Drain Current  

T

C

=25°C (Silicon limited)  

T

C

=100°C (Silicon limited)  

T

C

=25°C (Package limited)  

T

C

=25°C  

I

D

Vgs=4.5V  

I

DP  

Pulsed Drain Current  

A

A

mJ  

I

E

AS  

Avalanche Current

 

(L=0.1mH)  

Avalanche Energy

 

(L=0.1mH)  

23  

26  

AS  

T

C

=25°C  

T

C

=100°C  

71  

35  

W

P

D  

Maximum Power Dissipation  

T

J,

T

STG  

Junction & Storage

T

e

mperature Range  

°C  

-55~175  

Thermal Characteristics  

Symbol  

Parameter  

Max.  

Unit  

Thermal resistance, junction to case  

2.1  

℃

/W  

R

thJC  

thJA  

R

Thermal resistance, junction to ambient  

106  

℃

/W  

1

April 26, 2016  

HP100N03/HD100N03  

Electrical Characteristics

(TA=25°C unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min. Typ Max.  

Unit  

V

Static Characteristics  

BV

DSS  

Drain-Source Breakdown  

Voltage  

Zero Gate Voltage Drain  

Current  

V

GS

=0

V

,

I

D

=250uA  

30  

—

—

—

—

uA  

V

DS

=30V,V

GS

=0V  

1

I

DSS  

V

GS(th)  

I

GSS  

V

nA  

Gate Threshold Voltage  

Gate Leakage Current  

V

DS

=V

GS

,I

D

=250uA  

V

GS

=±20

V

, V

DS

=0V  

0.8  

—

—

1.8  

—

±100  

mΩ  

V

GS

=10V, I

D

=20A  

V

GS

=4.5

V

, I

D

=20A  

VDS=5V, ID=100A  

—

—

—

3.1  

4.3  

72  

4.1  

7

R

DS(on)  

G

fs  

Drain-Source On-Resistance  

Forward Transconductance  

S

—

Diode Characteristics  

V

SD  

Diode Forward Voltage  

I

SD

=25A,V

GS

=0V  

—

—

0.8  

1.3  

50  

V

A

I

S

Diode Continuous Forward  

Current  

—

t

rr  

Reverse Recovery Time  

IS=20A,  

di/dt=100A/us  

—

—

14  

—

—

nS  

Q

rr  

Reverse Recovery Charge  

2.8  

nC  

Dynamic Characteristics  

R

G  

Gate Resistance  

V

GS

=0

V

, V

DS

=0

V

,  

Frequency=1MHz  

—

—

—

—

1.9  

—

—

—

—

Ω

C

iss  

C

oss  

C

rss  

Input Capacitance  

Output Capacitance  

2999  

335  

VGS=0V,  

VDS=15V,  

F=1MHz  

pF  

Reverse Transfer  

Capacitance  

290  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Delay Time  

—

—

—

—

21  

32  

59  

34  

—

—

—

—

VDS=15V,  

ID=1A,  

Rg=3

Ω,  

Rise Time  

nS  

Turn-Off Delay Time  

Fall Time  

VGS=4.5V  

Gate Charge Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

—

—

—

26  

3.5  

14  

—

—

—

VDS=25V

，

 

VGS=4.5V

，  

ID=14A  

Gate-to-Source Charge  

Gate-to-Drain Charge  

nC  

2

April 26, 2016  

HP100N03/HD100N03  

Typical Operating Characteristics  

Figure 1. Typ. Output Characteristics  

Figure 2. Typ. Output Characteristics  

180  

120  

100  

80  

60  

40  

20  

0

Tj=25  

℃

Tj=125  

℃

160  

140  

120  

100  

80  

5V  

4.5V  

3V  

From Bottom to Top  

7,9,10V  

From Bottom to Top  

3.5,4.5,5,7,9,10V  

3.5V  

3V  

60  

40  

20  

0

0

2

4

6

8

10  

12  

14  

16  

18  

20  

0

1

2

3

4

5

6

VDS(V)  

VDS(V)  

Figure 3. Transfer Characteristics  

Figure 4. Gate Threshold Voltage Characteristics  

4.0  

1E+3  

1E+2  

1E+1  

1E+0  

1E-1  

1E-2  

1E-3  

VDS=5V  

ID=250uA  

3.5  

Tj = 125  

℃

3.0  

2.5  

2.0  

1.5  

1.0  

Tj = 25  

℃

-50 -25  

0

25 50 75

 

100 125 150  

Tj

（℃  

0.0 0.5 1.0 1.5 2.0 2.5 3.0  

VGS(V)  

）

3

April 26, 2016  

HP100N03/HD100N03  

SKTD055N03L  

Typical Operating Characteristics  

Figure 5. Rdson vs. Drain Current Characteristics  

1E-2  

Figure 6. Rdson vs. Junction Tem Characteristics  

2.2  

VGS=4.5V,Tj=25  

℃

VGS=4.5V,ID=20A  

2.0  

8E-3  

6E-3  

4E-3  

2E-3  

0E+0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

-50 -25  

0

25  

50  

Tj  

（℃）  

75 100

 

125 150  

0

20  

40  

60  

80  

100  

ID(A)  

Figure 7. Rdson vs. VGS Characteristics  

Figure 8. IS vs. VSD Characteristics  

1E+0  

1E+2  

ID=20A  

Tj=25  

℃

Tj=125  

℃

1E+1  

1E+0  

1E-1  

1E-2  

1E-1  

1E-2  

1E-3  

Tj=25  

℃

* Note:  

1. VGS=0V  

2. 250uS Pusle test  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

0

2

4

6

8

10  

12  

VGS(V)  

VS (V)  

4

April 26, 2016  

HP100N03/HD100N03  

Typical Operating Characteristics  

Figure 9. Gate Charge Characteristics  

Figure 10. Capacitance Characteristics  

5

4.5  

4

1E+4  

1E+3  

1E+2  

3.5  

Ciss  

3

VDS=25V,ID=14A  

2.5  

2

Coss  

Cr

s

s  

1.5  

1

0.5  

0

0

5

10  

15  

20  

25  

30  

0

5

10  

15  

20  

25  

30  

VDS(V)  

Qg (nC)  

Figure 11. Thermal Resistance Characteristics  

5

April 26, 2016  

HP100N03/HD100N03  

Test Circuit & Waveform  

6

April 26, 2016  

HP100N03/HD100N03  

Package Information  

{vTYY G  

7

April 26, 2016  

HP100N03/HD100N03  

Package Information  

TO-220 (B)  

±0.20  

±0.20  

4.57  

±0.20  

1.27  

±0.20  

2.67  

±0.20  

1.27  

±0.20  

0.81  

2.54typ  

2.54typ  

±0.20  

0.40