HL-Haolin-Elec-HD7N60
| Part # | HL-Haolin-Elec-HD7N60 |
Download  | HL-Haolin-Elec-HD7N60 |
June 2015
BV
DSS
= 600
V
R
DS(on) typ
ꢀꢀ
1
ꢁ
00
ꢀȍ
HD7N60U / HU7N60U
600V N-Channel MOSFET
I
D
= 6.0
A
FE
A
T
URES
2
1
Originative New Design
1
3
2
3
Superior Avalanche
Rugged Technology
Robust Gate Oxide Technology
Very Low
Intrinsic Capacitances
Excellent Switching
Characteristics
Unrivalled Gate Charge : 22.0
nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
ꢂꢀꢀ
1
ꢁ
00
ꢀȍꢀꢃ7Sꢁꢄꢀ#9
GS
=10V
100% Avalanche Tested
HD7N60
HU7N60
1.Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
T
C
=25
unless otherwise specified
Symbol
V
DSS
Parameter
Drain-Source Voltage
Value
Units
V
600
7
.0
Drain Current
– Continuous (T
C
= 25
)
– Continuous (T
C
= 100
)
A
I
D
Drain Current
4
.8
A
(Note 1)
I
DM
Drain Current
– Pulsed
24.0
ρ
30
280
6.0
A
V
GS
E
AS
I
AR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25
)*
Power Dissipation (T
C
= 25
)
9.8
mJ
V/ns
4.5
2.5
98
W
W
P
D
– Derate above 25
Operating and Storage Temperature Range
0.78
W/
T
J
, T
STG
T
L
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
Thermal Resistance
Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
ș
JC
R
ș
JA
R
ș
JA
Junction-to-Case
—
—
—
1.28
Junction-to-Ambient*
Junction-to-Ambient
50
/W
110
* When
mounted on the minimum pad size recommended (PCB Mount)
Electrical Characteristics
T
C
=25
q
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
Ꮃ
2.5
—
—
4.5
1.1
V
R
DS(ON)
V
GS
= 10 V, I
D
= 3.0 A
0.96
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
Ꮃ
600
—
—
—
—
V
ǻ
BV
DSS
Breakdown Voltage Temperature
I
D
= 250
Ꮃ
, Referenced to 25
0.6
V/
/
ǻ
T
J
I
DSS
I
GSS
Coefficient
V
DS
= 600 V, V
GS
= 0 V
—
—
—
—
—
—
1
Ꮃ
Ꮃ
Ꮂ
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
DS
= 480 V, T
C
= 125
GS
=
ρ
30 V, V
DS
= 0 V
10
V
ρ
100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
1200 1560
Ꮔ
Ꮔ
Ꮔ
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
100
130
Reverse Transfer Capacitance
11.0
14.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
35
50
70
100
240
100
29.0
—
Ꭸ
Ꭸ
V
DS
= 300 V, I
D
= 7.0 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
120
50
Ꭸ
(Note 4,5)
(Note 4,5)
Ꭸ
Q
g
Q
gs
Q
gd
22.0
6.5
6.5
nC
nC
nC
V
DS
= 480 V,
I
D
= 7.0 A,
V
GS
= 10 V
—
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
6.0
24
1.4
—
A
Source-Drain Diode Forward Voltage
I
S
= 6.0 A, V
GS
= 0 V
—
V
Reverse Recovery Time
Reverse Recovery Charge
350
Ꭸ
I
S
= 7.0 A, V
GS
= 0 V
di
F
/dt = 100 A/
ȝV
(Note 4)
—
3.3
—
ȝ&
Qrr
Notes ;
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L=9.0mH,
I
AS
=7.0A, V
DD
=50V, R
G
=25
:
, Starting T
J
=25
q
C
3. I
SD
ꢅꢁꢆ$ꢇꢀ
di/dt
ꢈꢆꢆ$ꢉȝV
, V
DD
%9
DSS
, Starting T
J
=25
q
C
4. Pulse
Test : Pulse Width
ꢀꢊꢆꢆȝVꢇꢀ’XWꢀ&FOHꢀꢀꢈꢋ
5. Essentially
Independent of Operating Temperature
Typical Characteristics
V
G
S
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
25
o
C
Bottom :
5.0 V
1
150
o
C
-25
o
C
* Notes :
* Notes :
1. V
DS
= 30V
1. 300us Pulse Test
2. T
C
= 25
o
C
2. 300us Pulse Test
-1
10
0.1
10
0
10
1
2
4
6
8
10
V
G
S
, Gate-Source Voltage [V]
V
D
S
, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
3
2
1
0
10
V
GS
= 10V
1
150
o
C
25
o
C
V
GS
= 20V
* Notes :
1. V
G
S
= 0V
ꢀ
Note : T
J
= 25
o
C
16 20
2. 300us Pulse Test
0.1
0.0
0
4
8
12
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Source-Drain Voltage [V]
I
D
, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
1200
800
400
0
12
10
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
C
C
iss
6
C
oss
* Note ;
1. V
G
S
= 0 V
4
2. f = 1 MHz
2
C
rss
ꢀ
Note : I
D
= 7.5A
0
-1
10
10
0
10
1
0
5
10
15
20
25
Q
G
, Total Gate Charge [nC]
V
D
S
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
ꢀ
Note :
ꢀꢁ
Note :
1. V
G
S
= 10 V
1. V
G
S
= 0 V
2. I
D
= 3.0 A
2. I
D
= 250
P
A
150 200
0.8
-100
-100
-50
0
50
100
150 200
-50
0
50
100
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
6
4
2
0
Operation in This Area
is Limited by R
DS(on)
10
P
s
10
1
100
P
s
1
m
s
10 ms
100 ms
DC
10
0
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-1
10
10
0
10
1
10
2
10
3
25
50
75
100
125
150
V
D
S
, Drain-Source Voltage [V]
T
C
, Case Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
D=0.5
* Notes :
1. Z
T
JC
(t) = 1.28
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
T
JC
(t)
0.2
0.1
-1
10
0.05
P
DM
0.02
0.01
t
1
single pulse
t
2
-2
10
10
0
10
1
-5
10
-4
10
-3
10
-2
10
-1
10
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
ꢌꢆ.ȍ
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Package Dimension
A
O{vTYY P
G
Package Dimension
O{vTYY P
G
B
Package Dimension
A
O{vTYX P G
Package Dimension
O{vTYX P G
B
