HL-Haolin-Elec-HF16N50
| Part # | HL-Haolin-Elec-HF16N50 |
Download  | HL-Haolin-Elec-HF16N50 |
Apr 2014
BV
DSS
= 500
V
DS(on) typ
= 0.40
ȍ
R
HF1
6
N50
500V N-Channel MOSFET
I
D
= 16
A
TO-220F
FE
A
T
URES
Originative New Design
Superior Avalanche
Rugged Technology
Robust Gate Oxide Technology
Very Low
Intrinsic Capacitances
Excellent Switching
Characteristics
Unrivalled Gate Charge : 58
nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
ꢀꢁꢁꢂꢃ
40
ꢁȍꢁꢄ7Sꢃꢅꢁ#9
GS
=10V
100% Avalanche Tested
1
2
3
1.Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
T
C
=25
unless otherwise specified
Symbol
V
DSS
Parameter
Drain-Source Voltage
Value
Units
V
500
16 *
11.4 *
72 *
ρ
30
950
16
Drain Current
– Continuous (T
C
= 25
)
– Continuous (T
C
= 100
)
A
I
D
Drain Current
A
(Note 1)
I
DM
Drain Current
– Pulsed
A
V
GS
E
AS
I
AR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25
)
3.7
mJ
4.5
37
V/ns
W
P
D
– Derate above 25
Operating and Storage Temperature Range
0.29
W/
T
J
, T
STG
T
L
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
* Drain current limited by maximum junction temperature
Thermal Resistance
Characteristics
Symbol
R
ș
JC
R
ș
JA
Parameter
Typ.
Max.
Units
Junction-to-Case
—
—
3.4
/W
Junction-to-Ambient
62.5
Electrical Characteristics
T
C
=25
q
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
Ꮃ
2.5
—
—
4.5
V
R
DS(ON)
V
GS
= 10 V, I
D
= 8.0 A
0.35 .0.42
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
Ꮃ
ǻ
BV
DSS
Breakdown Voltage Temperature
500
—
—
—
—
V
I
D
= 250
Ꮃ
, Referenced to 25
0.5
V/
/
ǻ
T
J
I
DSS
I
GSS
Coefficient
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125
V
GS
=
ρ
30 V, V
DS
= 0 V
—
—
—
—
—
—
1
Ꮃ
Ꮃ
Ꮂ
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
10
ρ
100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
3300 4300
Ꮔ
Ꮔ
Ꮔ
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
290
16
380
21
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
80
80
170
170
390
130
76
Ꭸ
Ꭸ
V
DS
= 250 V, I
D
= 16 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
190
60
Ꭸ
(Note 4,5)
Ꭸ
Q
g
Q
gs
Q
gd
58
nC
nC
nC
V
DS
= 400 V,
I
D
= 16 A,
V
GS
= 10 V
16
—
(Note 4,5)
17
—
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
18
72
1.4
—
A
Source-Drain Diode Forward Voltage
I
S
= 16 A, V
GS
= 0 V
—
V
Reverse Recovery Time
Reverse Recovery Charge
375
Ꭸ
I
S
= 16 A, V
GS
= 0 V
di
F
/dt = 100 A/
ȝV
(Note 4)
—
4.2
—
ȝ&
Qrr
Notes ;
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L=5.3mH,
I
AS
=16A, V
DD
=50V, R
G
=25
:
, Starting T
J
=25
q
C
3. I
SD
ꢆꢇ$ꢈꢁ
di/dt
ꢉꢂꢂ$ꢊȝV
, V
DD
%9
DSS
, Starting T
J
=25
q
C
4. Pulse
Test : Pulse Width
ꢁꢋꢂꢂȝVꢈꢁ’XWꢁ&FOHꢁꢁꢉꢌ
5. Essentially
Independent of Operating Temperature
Typical Characteristics
100
10
1
V
G
S
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
25
o
C
Bottom :
5.0 V
150
o
C
-25
o
C
* Notes :
* Notes :
1. V
DS
= 30V
1. 300us Pulse Test
2. T
C
= 25
o
C
2. 300us Pulse Test
10
0
0.1
10
0
10
1
2
4
6
8
10
V
G
S
, Gate-Source Voltage [V]
V
D
S
, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 10V
10
25
o
C
0.8
150
o
C
0.4
V
GS
= 20V
* Notes :
1. V
G
S
= 0V
ꢀ
Note : T
J
= 25
o
C
2. 300us Pulse Test
1
0.0
0.2
0.6
1.0
1.2
1.4
0
8
16
24
32
40
48
56
V
SD
, Source-Drain Voltage [V]
I
D
, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
C
C
iss
6
C
oss
* Note ;
1. V
G
S
= 0 V
4
2. f = 1 MHz
2
ꢀ
Note : I
D
= 18A
C
rss
0
10
0
-1
10
0
10
1
0
10
20
30
40
50
60
Q
G
, Total Gate Charge [nC]
V
D
S
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
ꢀꢁ
Note :
0.9
0.8
1. V
G
S
= 0 V
ꢀ
Note :
1. V
G
S
= 10 V
2. I
D
= 250
P
A
2. I
D
= 9.0 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
18
15
12
9
Operation in This Area
is Limited by R
DS(on)
10
2
10
1
10
0
10
P
s
100
P
s
1
m
s
10 ms
100 ms
DC
6
-1
10
* Notes :
1. T
C
= 25
o
C
3
2. T
J
= 150
o
C
3. Single Pulse
-2
0
25
10
10
0
10
1
10
2
10
3
50
75
100
125
150
V
D
S
, Drain-Source Voltage [V]
T
C
, Case Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
10
0
0.2
* Notes :
1. Z
T
JC
(t) = 3.4
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
T
JC
(t)
0.1
0.05
-1
10
0.02
P
DM
0.01
t
1
single pulse
t
2
-2
10
-5
10
-4
-3
-2
10
-1
10
10
10
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
ꢍꢂ.ȍ
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Package Dimension
{vTYYWmG
±0.20
±0.20
±0.20
2.54
±0.20
0.70
±0.20
2.76
1.47max
±0.20
±0.20
0.80
0.50
2.54typ
2.54typ
TO-220FM
TO-220F
