HL-Haolin-Elec-HF18N50

H

F

18N50  

500V N-Channel MOSFET  

FE

A

T

URES  

⚫

Fast switching  

⚫

100% avalanche tested  

⚫

Improved dv/dt capability  

APPLICATIONS  

⚫

Switch Mode Power Supply (SMPS)  

⚫

Uninterruptible Power Supply (UPS)  

⚫

Power Factor Correction (PFC)  

Device Marking and Package Information  

Device  

Package  

Marking  

HF18N50  

TO-220F  

HF18N50  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage (V

GS

= 0V)  

Continuous Drain Current  

Pulsed Drain Current  

V

DSS  

I

D  

500  

18  

V

A

(note1)  

(note2)  

I

DM  

72  

A

Gate-Source Voltage  

V

GSS  

E

AS  

I

AS  

±

30  

980  

V

Single Pulse Avalanche Energy  

mJ  

A

Avalanche Current  

(note1)  

14  

Repetitive Avalanche Energy  

Power Dissipation (T

C

= 25ºC)  

(note1)  

E

AR  

P

D  

3.92  

98  

mJ  

W

ºC  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+150  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC /W  

V4.2  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

thJC  

R

thJA  

1.27  

62.5  

1

H

F

18N50  

Specifications

T

J

= 25ºC

 

, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

Gate-Source Threshold Voltage  

Drain-Source On-Resistance (Note3)  

Dynamic  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 500V, V

GS

= 0V, T

J

= 25ºC  

V

GS

=

±

30V  

500  

—  

—  

—  

—  

V

μA  

nA  

V

1

±

100  

4.0  

I

GSS  

—  

—  

V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 9A  

3.0  

—  

—  

0.26  

0.32  

Ω

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

2367  

228  

15  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 25V,  

f = 1.0MHz  

Output Capacitance  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge  

53.4  

10  

V

DD

=400V, I

D

= 18A,  

V

GS

= 10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

20  

Turn-on Delay Time  

51.3  

36.5  

232  

61  

Turn-on Rise Time  

V

DD

= 250

V

,

I

D

=18A,  

ns  

R

G

= 25

Ω  

Turn-off Delay Time  

t

d(off)  

t

f  

Turn-off Fall Time  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

I

S  

—  

—  

—  

—  

—  

—  

—  

18  

72  

1.4  

—  

T

C

= 25 ºC  

A

Pulsed Diode Forward Current  

Body Diode Voltage  

I

SM  

V

SD  

t

rr  

T

J

= 25ºC, I

SD

= 9A, V

GS

= 0V  

—  

V

Reverse Recovery Time  

Reverse Recovery Charge  

497  

4

ns  

μC  

V

GS

= 0V,I

S

= 18A,  

di

F

/dt =100A /

μs  

Q

rr  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. L=10mH,

 

V

DD

= 50V, R

G

= 25 Ω, Starting T

J

= 25 ºC  

3. Pulse

 

Test: Pulse width

≤ 300μs, Duty Cycle ≤

1%  

2

V4.2  

H

F

18N50  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics (T

J

= 25ºC)  

Figure 2. Body Diode Forward Voltage  

35  

10

2  

20V  

30  

10V  

8V  

7V  

6V  

5V  

T

J

= 150

º

C  

25  

10

1  

10

0  

20  

T

J

= 25

º

C  

15  

10  

5

0

10

-1  

0

4

8

12  

16  

20  

0.2  

0.4  

0.6  

0.8  

1

1.2  

1.4  

V

DS

, Drain-to-Source Voltage (V)  

Figure 3. Drain Current vs. Temperature  

V

SD

, Source-to-Drain Voltage (V)  

Figure 4. BV

Variation vs. Temperature  

20  

18  

16  

14  

12  

10  

8

= 0V I

=250uA  

6

4

2

0

25  

50  

75  

100  

125  

150  

T

C

, Case Temperature (A)  

, Case Temperature (

Figure 5. Transfer Characteristics  

Figure 6. On-Resistance vs. Temperature  

3

2.5  

2

V

GS

= 10V I

D

= 9A  

T

J

= 25

º

C  

1.5  

1

T

J

= 150

º

C  

0.5  

0

-75  

-25  

25  

75  

125  

V

GS

, Gate-to-Source Voltage (V)  

T

J

, Junction Temperature (

º

C)  

3

V4.2  

H

F

18N50  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 7. Capacitance  

Figure 8. Gate Charge  

V

DD

= 100V  

10

4  

10

3  

10  

8

C

iss  

V

DD

= 250V  

V

DD

= 400V  

C

oss  

6

10

2  

10

1  

4

C

rss  

V

GS

= 0V  

f = 1MHz  

2

10

0  

0

0

10  

20  

30  

40  

50  

60  

0

10  

20  

30  

40  

V

DS

, Drain-to-Source Voltage (V)  

Q

g

, Total Gate Charge (nC)  

Figure 9. Transient Thermal Impedance  

10

1  

10

0  

10

-1  

10

-2  

D = 0.5  

D = 0.2  

D = 0.1  

D = 0.05  

D = 0.02  

D = 0.01  

Single Pulse  

10

-3  

10

-6

10

-5

10

-4  

10

-3  

10

-2

10

-1  

10

0  

10

1  

T

p

, Pulse Width (s)  

4

V4.2  

H

F

18N50  

Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

5

V4.2  

H

F

18N50  

TO-220F  

MILLIMETERS  

MAX  

SYMBOLS  

MIN  

9.70  

15.50  

8.99  

4.40  

2.15  

2.50  

0.70  

0.40  

1.12  

3.40  

12.60  

2.34  

3.15  

3.00  

A

B

10.30  

16.10  

9.39  

4.80  

2.55  

2.90  

0.90  

0.60  

1.42  

3.80  

13.60  

2.74  

3.55  

3.30  

B1  

C

C1  

D

E

F

G

H

L

N

Q

Φ

P

 

6

V4.2