HL-Haolin-Elec-HF25N50
| Part # | HL-Haolin-Elec-HF25N50 |
Download  | HL-Haolin-Elec-HF25N50 |
HF25N50,HP25N50
500V N-Channel MOSFET
FE
A
T
URES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
V
DSS
I
D
Value
500
Unit
V
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current
25
A
(note1)
I
DM
100
A
Gate-Source Voltage
V
GSS
E
AS
±
30
1280
16
V
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
mJ
A
I
AR
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25ºC)
E
AR
142
mJ
W
ºC
P
D
173
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
0.72
62.5
ºC /W
1
V3.0
HF25N50,HP25N50
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Unit
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Dynamic
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 500V, V
GS
= 0V, T
J
= 25ºC
V
GS
=
±
30V
500
—
—
—
—
—
1
V
μA
nA
V
I
GSS
—
±
100
4.0
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 12.5A
3.0
—
—
0.21
Ω
0.3
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
3039
325
41
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
80
V
DD
= 400V, I
D
= 25A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
12
34
Turn-on Delay Time
37
Turn-on Rise Time
66
V
DD
250
V
,
I
D
=25A,
ns
R
G
=25
Ω
Turn-off Delay Time
t
d(off)
t
f
175
84
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
—
—
—
—
—
—
25
100
1.4
—
T
C
= 25 ºC
A
Pulsed Diode Forward Current
Body Diode Voltage
I
SM
V
SD
t
rr
T
J
= 25ºC, I
SD
= 25A, V
GS
= 0V
—
V
Reverse Recovery Time
450
ns
V
GS
= 0V, I
S
= 25A,
diF/dt = 100A/
μ
s
Reverse Recovery Charge
Q
rr
—
7.1
—
μC
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
=4.5A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
3. Pulse
Test: Pulse width
≤ 300μs, Duty Cycle ≤
1%
2
V3.0
HF25N50,HP25N50
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics (T
J
= 25ºC)
Figure 2. Body Diode Forward Voltage
10
2
35
20V
10V
8V
7V
6V
30
25
20
15
10
5
T
J
= 150
º
C
10
1
10
0
5V
T
J
= 25
º
C
10
-1
0
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Drain Current vs. Temperature
V
SD
, Source-to-Drain Voltage (V)
30
25
20
15
10
5
0
0
30
60
90
120
150
T
C
, Case Temperature (A)
Figure 5. Transfer Characteristics
Figure 6. On-Resistance vs. Temperature
3
2.5
2
30
V
GS
= 10V I
D
=12.5A
T
J
= 25
º
C
25
20
15
10
5
T
J
= 150
º
C
1.5
1
0.5
0
0
-75
-25
25
75
125
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
º
C)
3
V3.0
HF25N50,HP25N50
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Capacitance
Figure 8. Gate Charge
12
10
8
10
4
10
3
C
iss
V
DD
= 100V
V
DD
= 250V
V
DD
= 400V
C
oss
6
10
2
10
1
4
C
rss
2
V
GS
= 0V
f = 1MHz
0
0
15
30
45
60
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
g
, Total Gate Charge (nC)
Figure 9. Transient Thermal Impedance
TO-220F
10
0
10
-1
10
-2
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
p
, Pulse Width (s)
4
V3.0
HF25N50,HP25N50
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
5
V3.0
HF25N50,HP25N50
TO-220F
6
V3.0
HF25N50,HP25N50
TO-220
