HL-Haolin-Elec-HF3710T

Dec 2018  

BV

DSS

= 100V  

R

DS(on) typ

=0.011 Ω  

HF3710T  

100V N-Channel MOSFET  

TO-220F  

FE

A

T

URES  

1

2

3



Originative New Design  



Superior Avalanche

 

Rugged Technology  



Robust Gate Oxide Technology  



Very Low

 

Intrinsic Capacitances  



Excellent Switching

 

Characteristics  



Unrivalled Gate Charge : 22

 

nC (Typ.)  



Extended Safe Operating Area  

1.Gate 2.

 

Drain 3.

 

Source  



Lower R

DS(ON)

: 0.0110

 

Ω (Typ.) @V

=10V  

GS  



100% Avalanche Tested  

Absolute Maximum Ratings  

T

C

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Value  

Units  

V

V

DSS  

Drain-Source Voltage  

Drain Current  

100  

50  

I

D  

– Continuous (T

C

= 25

℃)  

– Continuous (T

C

= 100

℃)  

A

Drain Current  

30A  

230  

±

20  

230  

28  

A

I

DM  

V

GS  

E

AS  

I

AR  

Drain Current  

– Pulsed  

(Note 1)  

A

Gate-Source Voltage  

V

Single Pulsed Avalanche Energy  

Avalanche Current  

(Note 2)  

(Note 1)  

(Note 1)  

(Note 3)  

mJ  

A

E

AR  

dv/dt  

P

D  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt  

Power Dissipation (T

C

= 25

℃)  

20  

mJ  

V/ns  

5.8  

200  

1.3  

W

W/

℃  

℃

–

Derate above 25℃  

Operating and Storage Temperature Range  

T

J

, T

STG  

T

L  

-55 to +150  

Maximum lead temperature for soldering purposes,  

1/8” from case for 5 seconds  

300  

℃

Thermal Resistance

 

Characteristics  

Symbol  

Parameter  

Typ.  

Max.  

Units  

R

θ

JC  

R

θ

CS  

Junction-to-Case  

Case-to-Sink  

—  

0.5  

—  

0.85  

—  

℃/W  

Junction-to-Ambient  

62.5  

R

θ

JA  

1

HF3710T  

N-Channel 100V(D-S) MOSFET  

Absolute Maximum Ratings

(T

C

=25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

V

DS  

Unit  

V

Rating  

100  

Drain-Source Voltage  

Gate-Source Voltage  

V

GS  

±20  

V

Electrical Characteristics

(T

j

=25

℃

Unless Otherwise Specified)  

Symbol Parameter  

STATIC  

Conditions  

Min  

Typ  

Max Unit  

Drain-Source Breakdown Voltage  

V

GS

=0

V

,

I

D

=250

μ

A  

V

DS

=V

GS

, I

D

=250

μ

A  

V

DS

=0

V

,

V

GS

=±20V  

V

DS

=100

V

,

V

GS

=0V  

V

GS

=10

V

,

I

D

= 11.5A  

I

S

=1A, V

GS

=0V  

BV

DSS  

V

GS(th)  

I

GSS  

100  

2

V

Gate Threshold Voltage  

Gate Leakage Current  

4

±100  

1

V

nA  

μ

A  

m

Ω  

V

I

DSS  

Zero Gate Voltage Drain Current  

R

DS(ON)  

V

SD  

Drain-Source On-State Resistance  

Diode Forward Voltage  

11  

14  

1

0.6  

DYNAMIC  

Qg  

T

o

tal Gate Charge  

40  

9.4  

6

Gate-Source Charge  

Gate-Drain Charge  

Qgs  

Qgd  

Ciss  

Coss  

Crss  

t

d(on)  

t

r  

V

DS

=50

V

,

V

GS

=10

V

,

I

D

=11.5A  

V

DS

=30

V

,

V

GS

=0

V

,

f

=1.0MHz  

nC  

pF  

Input capacitance  

2071  

704  

28  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Turn-On Rise Time  

19.5  

37.6  

41  

V

DS

=50

V

,

R

L

=4.35

Ω  

V

GS

=10

V

,

R

G

=3

Ω  

I

D

=11.5A  

ns  

Turn-Off Delay Time  

Turn-Off Fall Time  

t

d(off)  

t

f  

13  

Trr  

Reverse Recovery Time  

Reverse Recovery Charge  

43  

ns  

I

D

=11.5A,V

GS

=0

V

,

di/dt=100A/us  

Qrr  

56  

nC  

Notes: a.

 

Based on epoxy or solder paste and bond wire Cu

1.5mil x1

(G), Al

15mil x2

(S) on each die of TO-220 package.  

b. Pulse test; pulse width

≦

300us, duty cycle

≦

2%.  

c. Force mos reserves the right to improve product design, functions and reliability without notice.  

0

2

2

Ma

y

, 2018-Ver1.0  

HF3710T  

N-Channel 100V(D-S) MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

3

03  

Ma

y

, 2018-Ver1.0  

HF3710T  

N-Channel 100V(D-S) MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

4

04  

Ma

y

, 2018-Ver1.0  

Package Dimension  

TO-220F  

±0.20  

±0.20  

±0.20  

2.54  

±0.20  

0.70  

±0.20  

2.76  

1.47max  

±0.20  

±0.20  

0.50  

0.80  

2.54typ  

2.54typ  

6