HL-Haolin-Elec-HF5N60
| Part # | HL-Haolin-Elec-HF5N60 |
Download  | HL-Haolin-Elec-HF5N60 |
Aug 2007
BV
DSS
= 600
V
DS(on) typ
= 2.0
Ω
R
HF5N60
600V N-Channel MOSFET
I
D
= 4.5
A
TO-220F
FE
A
T
URES
1
2
3
Originative New Design
Superior Avalanche
Rugged Technology
Robust Gate Oxide Technology
Very Low
Intrinsic Capacitances
Excellent Switching
Characteristics
Unrivalled Gate Charge : 10.5
nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 2.0
Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
1.Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Value
Units
V
V
DSS
Drain-Source Voltage
Drain Current
600
4.5*
2.6*
18*
±
30
210
4.5
I
D
– Continuous (T
C
= 25
℃
)
– Continuous (T
C
= 100
℃
)
A
Drain Current
A
I
DM
V
GS
E
AS
I
AR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
10
mJ
V/ns
4.5
Power Dissipation (T
C
= 25
℃
)
– Derate above 25
℃
33
0.26
W
W/
℃
℃
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
* Drain current limited by maximum junction temperature
Thermal Resistance
Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
JA
Junction-to-Case
—
—
3.79
℃/W
Junction-to-Ambient
62.5
Electrical Characteristics
T
C
=25
°
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
—
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
㎂
2.5
—
4.5
2.5
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2.25 A
2.0
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
I
D
= 250
㎂, Referenced to25℃
DS
= 600 V, V
GS
= 0 V
600
—
—
—
—
V
Δ
BV
DSS
Breakdown Voltage Temperature
0.6
V/℃
/
Δ
T
J
Coefficient
I
DSS
V
—
—
—
—
1
㎂
㎂
Zero Gate Voltage Drain Current
V
DS
= 480 V, T
C
= 125
℃
10
I
GSSF
I
GSSR
Gate-Body Leakage Current,
Forward
V
GS
= 30 V, V
DS
= 0 V
—
—
—
—
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
520
60
680
80
㎊
㎊
㎊
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
8.0
10.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
11
45
33
90
㎱
㎱
V
DS
= 300 V, I
D
= 4.5 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
Ω
40
88
㎱
(Note 4,5)
48
100
13.5
—
㎱
Q
g
Q
gs
Q
gd
10.5
2.5
4.0
nC
nC
nC
V
DS
= 480V, I
D
= 4.5 A,
V
GS
= 10 V
(Note 4,5)
—
Source-Drain Diode Maximum Ratings and Characteristics
I
S
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
—
4.5
18
1.4
—
A
I
SM
V
SD
trr
Source-Drain Diode Forward Voltage
I
S
= 4.5 A, V
GS
= 0 V
—
V
Reverse Recovery Time
I
S
= 4.5 A, V
GS
= 0 V
300
2.2
㎱
μC
di
F
/dt = 100 A/μs
(Note 4)
Reverse Recovery Charge
—
Qrr
Notes ;
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L=18.9mH,
I
AS
=4.5A, V
DD
=50V, R
G
=25
Ω
, Starting T
J
=25
°
C
3. I
SD
≤4.5A,
di/dt
≤200A/μs
, V
DD
≤BV
DSS
, Starting T
J
=25
°
C
4. Pulse
Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially
Independent of Operating Temperature
Typical Characteristics
10
1
10
0
150
o
C
25
o
C
-55
o
C
*
Note
1. V
DS
= 50V
2. 250
µ
s Pulse Test
-1
10
2
4
6
8
10
V
G
S
, Gate-Source Voltage
[V]
V
DS
, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
10
1
V
GS
= 10V
10
0
150
o
C
25
o
C
V
GS
= 20V
*
Note :
1. V
G
S
= 0V
Note : T
J
= 25
o
C
8
2. 250
µ
s Pulse Test
*
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
10
V
SD
, Source-Drain Voltage
[V]
I
D
, Drain Current
[A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
1000
800
600
400
200
0
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
rss
= C
gd
V
DS
= 120V
V
DS
= 300V
C
C
iss
V
DS
= 480V
6
C
oss
4
*
Note ;
1. V
G
S
= 0 V
2. f = 1 MHz
C
rss
2
*
N
ote : I
D
= 4.5A
0
-1
0
2
4
6
8
10
12
10
10
0
10
1
Q
G
, Total Gate Charge [nC]
V
D
S
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
*
Note :
1. V
G
S
= 0 V
0.9
0.8
*
Note :
1. V
G
S
= 10 V
2. I
D
= 250
µ
A
2. I
D
= 2.25 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
5
4
3
2
1
0
Operation in This Area
is Limited by R
DS(on)
10
1
10
0
100
µ
s
1
m
s
10 ms
100 ms
DC
-1
10
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-2
10
10
0
10
1
10
2
10
3
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
V
D
S
, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
10
0
0.2
* Notes :
0.1
1. Z
θ
JC
(t) = 3.79
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.05
-1
10
0.02
0.01
P
DM
single pulse
t
1
-2
10
t
2
-5
-4
10
-3
10
-2
10
-1
10
10
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
50KΩ
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Package Dimension
TO-220F
±0.20
±0.20
±0.20
2.54
±0.20
0.70
±0.20
2.76
1.47max
±0.20
±0.20
0.50
0.80
2.54typ
2.54typ
