HL-Haolin-Elec-HF7N65
| Part # | HL-Haolin-Elec-HF7N65 |
Download  | HL-Haolin-Elec-HF7N65 |
Sep 2009
HF7N65
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche
Rugged Technology
Robust Gate Oxide Technology
Very Low
Intrinsic Capacitances
Excellent Switching
Characteristics
Unrivalled Gate Charge : 22
nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 1.6
Ω
(Typ.) @V
GS
=10V
100% Avalanche Tested
1.Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Value
Units
V
V
DSS
Drain-Source Voltage
Drain Current
650
7.0*
4.3*
28.8*
±
30
210
I
D
– Continuous (T
C
= 25
℃)
– Continuous (T
C
= 100
℃)
A
Drain Current
A
I
DM
V
GS
E
AS
I
AR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
7.
0
E
AR
dv/dt
P
D
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25
℃)
14.7
4.5
mJ
V/ns
48
0.38
W
W/
℃
℃
– Derate above 25℃
Operating and Storage Temperature Range
T
J
, T
STG
T
L
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
* Drain current limited by maximum junction temperature
Thermal Resistance
Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
JA
Junction-to-Case
—
—
2.6
℃/W
Junction-to-Ambient
62.5
Electrical Characteristics
T
C
=25
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
—
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
㎂
2.1
—
4.5
1.6
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.5 A
1.59
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
650
—
—
—
—
V
Δ
BV
DSS
Breakdown Voltage Temperature
I
D
= 250
㎂, Referenced to25℃
0.65
V/℃
/
Δ
T
J
Coefficient
I
DSS
V
DS
= 650 V, V
GS
= 0 V
—
—
—
—
1
㎂
㎂
Zero Gate Voltage Drain Current
V
DS
= 520 V, T
C
= 125
℃
10
I
GSSF
I
GSSR
Gate-Body Leakage Current,
Forward
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
—
—
—
—
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
-100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
940
105
13
1220
135
17
㎊
㎊
㎊
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
17
61
81
65
22
5
45
130
170
140
29
㎱
㎱
V
DS
= 325 V, I
D
= 7.0 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
Ω
㎱
(Note 4,5)
㎱
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 520V, I
D
= 7.0 A,
V
GS
= 10 V
—
(Note 4,5)
9
—
Source-Drain Diode Maximum Ratings and Characteristics
I
S
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
—
7.2
28.8
—
A
I
SM
SD
trr
S
GS
—
Reverse Recovery Time
I
S
= 7.0 A, V
GS
= 0 V
365
3.4
㎱
μ
C
di
F
/dt = 100 A/
μ
s
(Note 4)
Reverse Recovery Charge
—
Qrr
Notes ;
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. L=7.3mH,
I
AS
=7.2A, V
DD
=50V, R
G
=25
, Starting T
J
=25
C
3. I
SD
≤
7.2A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
C
4. Pulse
Test : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially
Independent of Operating Temperature
Typical Characteristics
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
10
1
10
0
10
-1
V
GS
= 10V
V
GS
= 20V
150
o
C
25
o
C
Note :
1. V
GS
= 0V
Note : T
J
= 25
o
C
2. 250
s Pulse Test
0
3
6
9
12
15
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
V
DS
= 130V
V
DS
= 325V
V
DS
= 520V
6
4
2
* Note : I
D
=7.2A
0
0
4
8
12
16
20
24
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
N
ote :
1. V
G
S
= 0 V
0.9
0.8
Note :
1. V
GS
= 10 V
2. I
D
=
2
50
A
2. I
D
= 3.6 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C
]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
8
6
4
2
0
Operation in This Area
is Limited by R
DS(on)
10
2
10
1
10
0
10
s
100
s
1
m
s
10 ms
100 ms
DC
-1
10
* Notes :
1. T
C
= 25
o
2. T
J
= 150
o
C
C
3. Single Pulse
-2
10
10
0
10
1
10
2
10
3
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
V
D
S
, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0
.
5
1 0
0
0 .2
0
.
1
*
N o
t
e s
1 .
J
C
(
t)
2 .
D u ty
F a c to r,
D = t
1
/t
2
3 .
T
J
M
T
C
P
D M
Z
J
C
(
t)
:
Z
=
2 .6
o
C
/
W
M a x.
0
.
0 5
1 0
–
1
–
=
*
0 .0 2
0
.
0 1
P
DM
s in g le
p u ls e
t
1
1 0
–
2
t
2
1 0
–
5
1 0
–
4
1 0
–
3
1 0
–
2
1 0
–
1
1 0
0
1 0
1
t
1
, S
q u a
r
e
W a
ve P
u ls e
D u ra tio n
[s e c ]
Figure 11. Transient Thermal Response Curve
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Package Dimension
TO-220F
±0.20
±0.20
±0.20
2.54
±0.20
0.70
2.76
1.47max
±0.20
±0.20
0.80
0.50
2.54typ
2.54typ
